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Modern semiconductor devices for integrated circuits
'Modern Semiconductor Devices for Integrated Circuits' introduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications.
Microstructure Optimization of Thermoelectric τsub.1-Alsub.2Fesub.3Sisub.3 via Graded Temperature Heat Treatments
To investigate the relationship between microstructure, chemical composition, and thermoelectric properties, we have applied graded temperature heat treatments to recently developed τ[sub.1]-Al[sub.2]Fe[sub.3]Si[sub.3]-based thermoelectric (FAST) materials formed by a peritectic reaction. We investigated microstructures, chemical compositions, and Seebeck coefficients as continuous functions of heat treatment temperature. The τ1 phase can become p- and n-type semiconductors without doping by changing the Al/Si ratio. The Seebeck coefficient was maximized, exceeding |S| > 140 μVK[sup.−1] for both p- and n-type materials, by heat treatment at 1173 K for 24 h through microstructural optimization. These results show that combining the graded temperature heat treatments and spatial mapping measurements of thermoelectric properties gives effective routes to determine the suitable heat treatment temperature for materials with multiphase microstructure.
Journal Article
Load-Dependent Nanoscale Material Removal Behaviors of β-Gasub.2Osub.3 Surface in Single-Point Diamond Scratching: From Plastic Plowing to Brittle Fracture
This study investigates nanoscale material removal behavior and its correlation with subsurface damage of (100)-oriented β-Ga[sub.2]O[sub.3] subjected to single-point diamond scratching across a range of normal loads. Using multi-scale characterizations, we elucidate the load-dependent transition from elastic deformation to plasticity-dominated removal and, ultimately, to brittle fracture. Under low-load conditions, β-Ga[sub.2]O[sub.3] exhibits a fully plasticity-dominated removal mechanism, characterized by smooth groove formation with surface pile-up and a crack-free subsurface containing only dislocations and stacking faults, suggesting that ductile-regime processing is achievable under appropriate mechanical conditions. As the normal load increases, the material enters a ductile–brittle transition regime, where plastic flow coexists with the initiation of micro shear cracks, accompanied by unstable fluctuations in the friction coefficient. Under high-load conditions, extensive brittle fracture becomes dominant, characterized by severe subsurface mixed cracking and large-scale material spalling. This research contributes to a deeper understanding of the machinability of β-Ga[sub.2]O[sub.3] materials with high hardness and brittleness in ultraprecision surface processing.
Journal Article
Organic sensors : materials and applications
This book reviews the state of the art in the use of organic materals as physical, chemical and biomedical sensors in a variety of application settings. Topics covered include organic semiconductors for chemical and physical sensing; conducting polymers in sensor applications; chemically functionalized organic semiconductors for highly selective sensing; composite organic-inorganic sensors; artificial skin applications; organic thin film transistor strain gauges for biomedical applications; OTFT infrared sensors for touchless human-machine interaction; smart fabric sensors and e-textile technologie; image capture with organic sensors; organic gas sensors and electronic noses; electrolyte gated organic transistors for bio-chemical sensing; ion-selective organic electrochemical transistors; DNA biosensors; metabolic organic sensors; and conductive polymer based sensors for biomedical applications.
BOOK
Enhanced UVC Responsivity of Heteroepitaxial α-Gasub.2Osub.3 Photodetector with Ultra-Thin HfOsub.2 Interlayer
In this study, the influence of HfO[sub.2] interlayer thickness on the performance of heteroepitaxial α-Ga[sub.2]O[sub.3] layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO[sub.2] interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO[sub.2] interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO[sub.2] MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO[sub.2] interlayer is an effective strategy for enhancing the performance of α-Ga[sub.2]O[sub.3]-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions.
Journal Article
A Self-Powered, High-Performance Photodetector Based on a g-Csub.3Nsub.4/Textured Si n-n Heterojunction
g-C[sub.3]N[sub.4] has emerged as a promising metal-free semiconductor for optoelectronic applications due to its suitable bandgap, excellent stability, and low cost. However, enhancing its photoresponse efficiency in practical devices remains a challenge. In this work, a high-performance self-powered photodetector was developed using a g-C[sub.3]N[sub.4]/textured Si n-n heterojunction fabricated via a simple solution process. The device exhibits excellent diode characteristics with a rectification ratio of 4.9 × 10[sup.2] and an ideality factor of 1.41. It achieves broadband detection from 405 to 980 nm, a high responsivity of 3.2 A/W, a specific detectivity of 1.9 × 10[sup.14] Jones, and fast response speeds of 44/36 ms at 650 nm under zero bias. Significantly, the textured Si-based device shows approximately tenfold higher performance than its planar Si counterpart, owing to enhanced light absorption from the textured surface. The combination of excellent photoresponse and simple fabrication makes the g-C[sub.3]N[sub.4]/textured Si n-n heterojunction a promising candidate for low-cost, high-performance optoelectronic applications.
Journal Article