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Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers
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Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers
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Journal Article
Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers
2012
Overview
Quantum cascade (QC) lasers operating in the mid-infrared (IR) are being intensely pursued for environmental sensing and other important technological applications. Having demonstrated mid-IR (3
μ
m to 5
μ
m) electroluminescence (EL) from a II–VI intersubband device based on wide-band-gap (2.9 eV) Zn
0.24
Cd
0.26
Mg
0.5
Se on InP, there has been a drive towards production of a QC laser from these materials. To achieve lasing, waveguiding layers that straddle the active region used in the EL structure must be included. Initial attempts to grow this more complex structure resulted in degradation of the material quality. This paper presents the optimization steps required for the growth of the full QC laser structure and discusses possible mechanisms for the degraded quality.
Publisher
Springer US,Springer,Springer Nature B.V
Subject
Characterization and Evaluation of Materials
/ Chemistry and Materials Science
/ Cross-disciplinary physics: materials science; rheology
/ Electronics and Microelectronics
/ Exact sciences and technology
/ Fundamental areas of phenomenology (including applications)
/ Lasers
/ Lasing
/ Methods of deposition of films and coatings; film growth and epitaxy
/ Molecular, atomic, ion, and chemical beam epitaxy
/ Optical and Electronic Materials
/ Optics
/ Physics
