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Journal Article
A novel method for interfacial energy gap determination
2024
Overview
A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlO
X
/Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the I
C-hot
–V
EB
curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C
60
, PTCDA, and Alq3, has been determined finally.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
