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Integrated Pockels laser
by
Staffa, Jeremy
, Zhu, Lin
, Shen, Boqiang
, Lin, Qiang
, Wu, Lue
, Javid, Usman A.
, Chang, Lin
, Ling, Jingwei
, Morin, Theodore J.
, Lopez-rios, Raymond
, Vahala, Kerry J.
, Wang, Heming
, Xue, Shixin
, Bowers, John E.
, Li, Mingxiao
, Zeng, Siwei
, He, Yang
in
639/624/1020/1093
/ 639/624/1075/1079
/ 639/624/400/385
/ Atomic physics
/ Frequency dependence
/ Frequency modulation
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ Lidar
/ Lithium
/ Lithium niobates
/ Microwave photonics
/ multidisciplinary
/ Photonics
/ Science
/ Science (multidisciplinary)
/ Semiconductor lasers
/ Semiconductors
/ Waveguides
2022
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Integrated Pockels laser
by
Staffa, Jeremy
, Zhu, Lin
, Shen, Boqiang
, Lin, Qiang
, Wu, Lue
, Javid, Usman A.
, Chang, Lin
, Ling, Jingwei
, Morin, Theodore J.
, Lopez-rios, Raymond
, Vahala, Kerry J.
, Wang, Heming
, Xue, Shixin
, Bowers, John E.
, Li, Mingxiao
, Zeng, Siwei
, He, Yang
in
639/624/1020/1093
/ 639/624/1075/1079
/ 639/624/400/385
/ Atomic physics
/ Frequency dependence
/ Frequency modulation
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ Lidar
/ Lithium
/ Lithium niobates
/ Microwave photonics
/ multidisciplinary
/ Photonics
/ Science
/ Science (multidisciplinary)
/ Semiconductor lasers
/ Semiconductors
/ Waveguides
2022
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Integrated Pockels laser
by
Staffa, Jeremy
, Zhu, Lin
, Shen, Boqiang
, Lin, Qiang
, Wu, Lue
, Javid, Usman A.
, Chang, Lin
, Ling, Jingwei
, Morin, Theodore J.
, Lopez-rios, Raymond
, Vahala, Kerry J.
, Wang, Heming
, Xue, Shixin
, Bowers, John E.
, Li, Mingxiao
, Zeng, Siwei
, He, Yang
in
639/624/1020/1093
/ 639/624/1075/1079
/ 639/624/400/385
/ Atomic physics
/ Frequency dependence
/ Frequency modulation
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ Lidar
/ Lithium
/ Lithium niobates
/ Microwave photonics
/ multidisciplinary
/ Photonics
/ Science
/ Science (multidisciplinary)
/ Semiconductor lasers
/ Semiconductors
/ Waveguides
2022
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Journal Article
Integrated Pockels laser
2022
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Overview
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 10
18
Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.
On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
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