Explore the vast range of titles available.

Recently, semiconductor nanograting layers have been introduced and their optical properties have been studied. Spectroscopic ellipsometry has shown that nanograting significantly modifies the dielectric function of c-Si layers. Photoluminescence spectroscopy reveals the emergence of an emission band with a remarkable peak structure. It has been observed that nanograting also alters the electronic and magnetic properties. In this study, we investigate the quantum efficiency and spectral response of Si p-n junctions fabricated using subwavelength grating layers and aperiodically nanostructured layers. Our findings indicate that the quantum efficiency and spectral response are enhanced in the case of nanograting p-n junctions compared to plain reference junctions. Aperiodically nanostructured junctions exhibit similar results to nanograting junctions. However, aperiodic nanostructuring is a more straightforward fabrication method and, consequently, more appealing for the solar cell industry.

Topological crystalline insulators are a novel state of matter in which the topological features of the electronic structure have been predicted to originate from crystal symmetries. Now an experimental realization of a topological crystalline insulator is reported, in the form of Pb 1− x Sn x Se. Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection 1 , 2 . In this study we show that the narrow-gap semiconductor Pb 1− x Sn x Se is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

Nanotechnology is perceived as one of the innovatory disciplines of the XXI century science and the main direction of the economic and technological progress in the nearest years. Nowadays exist many ways of creating nanostructures and the Atomic Layer Deposition (ALD) method is one of them. This method, being a self-limiting growth process, can homogeneously cover the surfaces having very irregular shapes in the distinction from other methods. It is also possible a penetration of nanopores in the porous matrices. In this paper we introduce the innovatory use of the ALD method to receive the nanostructures of zinc oxide, where the execution of quantum dots will be presented. The unusual passivation of the surface of ZnTe nanowires received by the MBE method will also be shown. Finally we introduce some surprising types of substrates used to the low dimensional structures' creation and a potential application of the received ZnO nanostructures.

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al 2 O 3 ) and on Si covered with a Si 3 N 4 buffer layer. The Si 3 N 4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si 3 N 4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In this study we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a TCI for x  =  0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.

Understanding the electronic structure of transition-metal dopants in IV-VI semiconductors is critical for tuning their band structure. We analyze properties of Cr dopant in \\(Pb_{1-x}Sn_xTe\\) and PbSe by magnetic and transport measurements, which are interpreted based on density functional calculations. We demonstrate that the pinning of the Fermi energy to the chromium resonant level occurs for both n-type and p-type \\(Pb_{1-x}Sn_xTe\\) in the whole composition range. This enables us to determine the valence band and conduction band offsets at the PbTe/SnTe/PbSe heterointerfaces, which is important for designing high-prformance 2D transistors. Furthermore, the magnetic measurements reveal the presence of Cr ions in three charge states, \\(Cr^{3+}\\), \\(Cr^{2+}\\), and \\(Cr^{1+}\\). The last one corresponds to the Cr dopants incorporated at the interstitial, and not the substitutional, sites. The measured concentrations of the interstitial and substitutional Cr are comparable.

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

The correlation between the surface cross-hatched morphology and the interfacial misfit dislocations in partially relaxed InGaAs/GaAs heterostructures was studied by means of atomic force microscopy and electron-beam induced current mode in a scanning electron microscope. A close correspondence between the misfit-dislocation network at the interface and the surface morphology shows that the crosshatch development results primarily from the misfit-dislocation generation. Statistical analysis of the surface roughness reveals an anisotropy in strain relaxation of the epitaxial layers, which results from an asymmetry in the misfit-dislocation formation.

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.

Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO reported till now. In the present review we discuss advantages of the Atomic Layer Deposition (ALD) growth method, which enables us to control uniformity of ZnMnO and ZnCoO alloys. Properties of ZnO, ZnMnO and ZnCoO films grown by the ALD are discussed.