Explore the vast range of titles available.

Granular superconductors are the common examples of experimentally accessible model systems which can be used to explore various fascinating quantum phenomena that are fundamentally important and technologically relevant. One such phenomenon is the occurrence of reentrant resistive states in granular superconductors. Here, we report the observation of multiple reentrant resistive states for a disordered TiN thin film in its temperature and magnetic field dependent resistance measurements, R ( T ) and R ( B ), respectively. At each of the peak-temperatures corresponding to the zero-field R ( T ), a resistance peak appears in the R ( B ) around zero field which leads to a negative magnetoresistance (MR) region in its surrounding. These low-field negative MR regions appear for both perpendicular and parallel field directions with relatively higher amplitude and larger width for the parallel field. By adopting a granularity-based model, we show that the superconducting fluctuations in granular superconductors may lead to the observed reentrant states and the corresponding negative MR. Here, we propose that the reduction in the density of states in the fermionic channel due to the formation of Cooper pairs leads to the reentrant resistive state and the competition between the conduction processes in the single particle and Cooper channels result into the multiple resistive reentrances.

Here we report a novel nitridation technique for transforming niobium into hexagonal Nb 2 N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si 3 N 4 /Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb 2 N phase while the morphology shows granular nature of the films. The temperature dependent resistance measurements reveal a wide metal-to-superconductor transition featuring two distinct transition regions. The region close to the normal state varies strongly with the film thickness, whereas, the second region in the vicinity of the superconducting state remains almost unaltered but exhibiting resistive tailing. The current-voltage characteristics also display wide transition embedded with intermediate resistive states originated by phase slip lines. The transition width in current and the number of resistive steps depend on film thickness and they both increase with decrease in thickness. The broadening in transition width is explained by progressive establishment of superconductivity through proximity coupled superconducting nano-grains while finite size effects and quantum fluctuation may lead to the resistive tailing. Finally, by comparing with Nb control samples, we emphasize that Nb 2 N offers unconventional superconductivity with promises in the field of phase slip based device applications.

Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi 2 Te 3 topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches −22% at 8 T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga + ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi 2 Te 3 crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals.

Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si 3 N 4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi 2 & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature ( T a ) and the film thickness. The superconducting critical temperature ( T c ) strongly depends on T a and the maximum T c obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased T a and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current ( I c ) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the T c , intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with T a and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.

TiSe 2 is a known topological semi-metal (TSM) having both the semi-metallic and topological characters simultaneously along with the charge density wave (CDW) at below 200 K. In the current short article, we study the impact of Pd addition on CDW character of TiSe 2 and the possible induction of superconductivity at low temperatures. Bulk samples of TiSe 2 and Pd 0.1 TiSe 2 are synthesized by solid-state reaction route, which are further characterized by powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM), respectively, for their structural and micro-structural details. The vibrational modes of both samples are being analyzed by Raman spectroscopy, showing the occurrence of both A 1g and E g modes. CDW of pure TiSe 2 seen at around 200 K in electrical transport measurements in terms of sharp semi-metallic to metallic transition peak with hysteresis in cooling/warming cycles is not seen in Pd 0.1 TiSe 2 and rather a near metallic transport is seen down to 2 K. Although superconductivity is not seen down to 2 K, the CDW transition is seemingly completely suppressed in Pd 0.1 TiSe 2 . It is clear that Pd addition in TiSe 2 suppresses CDW drastically. Trials are underway to induce superconductivity in Pd-added TiSe 2 . Density functional theory (DFT) calculations show primary evidence of suppression of CDW by addition of Pd in TiSe 2 due to an increase in the density of states.

The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow band of temperature above the transition temperature Tc, the coexistence of SFs-mediated positive MR and WL-led negative MR in different range of magnetic field, as well as a crossover from positive to negative MR with increasing temperature are reported here. The crossover temperature coincides with a characteristic temperature (Tmax) at which a resistance peak appears in the zero-field R(T). The resistance peak and the associated magnetoresistance anomalies are addressed by using the quantum corrections to the conductivity (QCC) theory. We show that WL can be accounted for the observed negative MR. By introducing individual coefficients to both SFs and WL contributions, the dominance of one over the other is monitored with respect to temperature. It is observed that just above the Tc, SF dominates and with increasing temperature, the contributions from the both become comparable and finally, at Tmax, WL takes over completely. The presented approach may be adopted to compare various quantum contributions in two-dimensional superconductors particularly in the regime where both SFs and WL are pronounced.

TiSe2 is a known Topological semimetal (TSM) having both the semi-metallic and topological characters simultaneously and the Charge density wave (CDW) at below 200K. In the current short article, we study the impact of Pd addition on the CDW character of TiSe2 and the possible induction of superconductivity at low temperatures. Bulk samples of TiSe2 and Pd0.1TiSe2 are synthesized by solid-state reaction route, which is further characterized by powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM), respectively, for their structural and micro-structural details. The vibrational modes of both samples are being analyzed by Raman spectroscopy, showing the occurrence of both A1g and Eg modes. CDW of pure TiSe2 seen at around 200K in electrical transport measurements, in terms of sharp semi-metallic to metallic transition peak with hysteresis in cooling/warming cycles is not seen in Pd0.1TiSe2, and rather a near metallic transport is seen down to 2K. Although superconductivity is not seen down to 2K, the CDW transition is seemingly completely suppressed in Pd0.1TiSe2. Pd addition in TiSe2 suppresses CDW drastically. Trials are underway to induce superconductivity in Pd-added TiSe2. Density functional theory (DFT) calculations show primary evidence of suppression of CDW by adding Pd in TiSe2 due to an increase in the density of states.

Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 and elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (Ta) and the film thickness. The superconducting critical temperature (Tc) strongly depends on Ta and the maximum Tc obtained from the demonstrated technique is about 4.8 K for the thickness range of about 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased Ta and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (Ic) from the Ginzburg-Landau theoretical limit varies strongly with the thickness. Finally, the Tc, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with Ta and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.

Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low temperature. Here we report temperature dependent weak antilocalization (WAL) effects in the sculpted nanowires of topological insulator in the presence of perpendicular magnetic field. The quadratic and linear magnetoconductivity (MC) curves at low temperature indicate the bulk contribution in the transport. A cusp feature in magnetoconductivity curves (positive magnetoresistance) at ultra low temperature and at magnetic field, less than 1T represent the WAL indicating the transport through surface states. The MC curves are discussed by using the 2D Hikami Larkin Nagaoka theory. The crossover interplay nature of positive and negative magnetoresistance observed in the MR curve at ultra low temperature. Our results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi2Te3 can be achieved at mK range and linear MR observed at 2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.

Here we report a novel nitridation technique for transforming niobium into hexagonal Nb2N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si3N4/Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb2N phase while the morphology shows granular nature of the films. The temperature dependent resistance measurements reveal a wide metal-to-superconductor transition featuring two distinct transition regions. The region close to the normal state varies strongly with the film thickness, whereas, the second region in the vicinity of the superconducting state remains almost unaltered but exhibiting resistive tailing. The current-voltage characteristics also display wide transition embedded with intermediate resistive states originated by phase slip lines. The transition width in current and the number of resistive steps depend on film thickness and they both increase with decrease in thickness. The broadening in transition width is explained by progressive establishment of superconductivity through proximity coupled superconducting nano-grains while finite size effects and quantum fluctuation may lead to the resistive tailing. Finally, by comparing with Nb control samples, we emphasize that Nb2N offers unconventional superconductivity with promises in the field of phase slip based device applications.