Catalogue Search | MBRL
Are you sure you want to remove the book from the shelf?
{{itemTitle}}
1,751
result(s) for
"Andreev, V"
Sort by:
Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.
Journal Article
Improved limit on the electric dipole moment of the electron
The standard model of particle physics accurately describes all particle physics measurements made so far in the laboratory. However, it is unable to answer many questions that arise from cosmological observations, such as the nature of dark matter and why matter dominates over antimatter throughout the Universe. Theories that contain particles and interactions beyond the standard model, such as models that incorporate supersymmetry, may explain these phenomena. Such particles appear in the vacuum and interact with common particles to modify their properties. For example, the existence of very massive particles whose interactions violate time-reversal symmetry, which could explain the cosmological matter–antimatter asymmetry, can give rise to an electric dipole moment along the spin axis of the electron. No electric dipole moments of fundamental particles have been observed. However, dipole moments only slightly smaller than the current experimental bounds have been predicted to arise from particles more massive than any known to exist. Here we present an improved experimental limit on the electric dipole moment of the electron, obtained by measuring the electron spin precession in a superposition of quantum states of electrons subjected to a huge intramolecular electric field. The sensitivity of our measurement is more than one order of magnitude better than any previous measurement. This result implies that a broad class of conjectured particles, if they exist and time-reversal symmetry is maximally violated, have masses that greatly exceed what can be measured directly at the Large Hadron Collider.
An experimental measurement of the electric dipole moment of the electron with sensitivity an order of magnitude better than previous studies increases the accessible mass range of fundamental particles by a factor of three.
Journal Article
Reaction-Diffusion Processes and “Dead Zone” in a Porous Catalyst Granule
In this paper, we discuss reaction-diffusion processes in porous catalyst granules of spherical, cylindrical, and lamellar forms for various types of chemical reactions. We obtain approximate solutions of the quasi-homogeneous model for general catalytic reactions. Also, we analyze necessary conditions for the appearance of a “dead zone” in the central domain of a porous catalyst granule in the case of a general catalytic reaction.
Journal Article
Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielectric during all the testing. The proposed technique makes it possible to assess the integrity of the thin dielectric and at the same time to control the charge effects of its degradation. The method in particular can be used for manufacturing processes to control integrated circuits (ICs) based on MIS structures. In the paper, we propose an advanced algorithm of the Bounded J-Ramp testing of the gate dielectric and receive its approval when monitoring the quality of the gate dielectrics of production-manufactured MIS devices. We found that the maximum value of positive charge obtained when tested by the proposed method was a value close to that obtained when the charge was injected into the dielectric under a constant current with a Bounded J value despite large differences in the rate of degradation of the dielectric.
Journal Article
Change in the Charge State of MOS Structures under Radiation and High-Field Injection at a Constant Voltage
The features of radiation-induced positive charge accumulation in the gate dielectric film under high-field injection of electrons at a constant voltage are studied. The conditions are determined, under which the current injection mode can be used to increase the dose sensitivity of MOS (metal–oxide semiconductor) and RADFET (Radiation sensing Field Effect Transistor) sensors. Model representations of physical effects taking place in the gate dielectric and at the MOS structure interfaces under the concurrent influence of radiation and high-field injection of electrons at a constant voltage are improved. It is shown that the absorbed radiation dose at a constant voltage on the sample can be calculated from changes in the current density of high-field electron injection. This dose can increase by several orders of magnitude due to the accumulation of radiation-induced positive charge in the gate dielectric. The influence of radiation intensity on the accumulation of radiation-induced positive charge in the gate dielectric of MOS sensors is determined.
Journal Article
Application of the KFParticle Package for Reconstruction of the Primary Vertex of Interaction in the SPD Experiment
The article considers the possibility of using the KFParticle package developed for the reconstruction of short-lived particles also for the reconstruction of the primary vertex of interactions in the SPD experiment at the NICA collider. A comparison is made with the algorithm for reconstruction of the primary vertex currently used in the SPD experiment.
Journal Article
(Z,Z)-Selanediylbis(2-propenamides): Novel Class of Organoselenium Compounds with High Glutathione Peroxidase-Like Activity. Regio- and Stereoselective Reaction of Sodium Selenide with 3-Trimethylsilyl-2-propynamides
The efficient regio- and stereoselective synthesis of (Z,Z)-3,3′-selanediylbis(2-propenamides) in 76–93% yields was developed based on the reaction of sodium selenide with 3-trimethylsilyl-2-propynamides. (Z,Z)-3,3′-Selanediylbis(2-propenamides) are a novel class of organoselenium compounds. To date, not a single representative of 3,3′-selanediylbis(2-propenamides) has been described in the literature. Studying glutathione peroxidase-like properties by a model reaction showed that the activity of the obtained products significantly varies depending on the organic moieties in the amide group. Divinyl selenide, which contains two lipophilic cyclohexyl substituents in the amide group, exhibits very high glutathione peroxidase-like activity and this compound is considerably superior to other products in this respect.
Journal Article
Crystal Structure, Vibrational, Spectroscopic and Thermochemical Properties of Double Sulfate Crystalline Hydrate CsEu(H2O)3(SO4)2·H2O and Its Thermal Dehydration Product CsEu(SO4)2
Crystalline hydrate of double cesium europium sulfate [CsEu(H2O)3(SO4)2]·H2O was synthesized by the crystallization from an aqueous solution containing equimolar amounts of 1Cs+:1Eu3+:2SO42− ions. Anhydrous salt CsEu(SO4)2 was formed as a result of the thermal dehydration of the crystallohydrate. The unusual effects observed during the thermal dehydration were attributed to the specific coordination of water molecules in the [CsEu(H2O)3(SO4)2]·H2O structure. The crystal structure of [CsEu(H2O)3(SO4)2]·H2O was determined by a single crystal X-ray diffraction analysis, and the crystal structure of CsEu(SO4)2 was obtained by the Rietveld method. [CsEu(H2O)3(SO4)2]·H2O crystallizes in the monoclinic system, space group P21/c (a = 6.5574(1) Å, b = 19.0733(3) Å, c = 8.8364(2) Å, β = 93.931(1)°, V = 1102.58(3) Å3). The anhydrous sulfate CsEu(SO4)2 formed as a result of the thermal destruction crystallizes in the monoclinic system, space group C2/c (a = 14.327(1) Å, b = 5.3838(4) Å, c = 9.5104(6) Å, β = 101.979(3) °, V = 717.58(9) Å3). The vibration properties of the compounds are fully consistent with the structural models and are mainly determined by the deformation of non-rigid structural elements, such as H2O and SO42−. As shown by the diffused reflection spectra measurements and DFT calculations, the structural transformation from [CsEu(H2O)3(SO4)2]·H2O to CsEu(SO4)2 induced a significant band gap reduction. A noticeable difference of the luminescence spectra between cesium europium sulfate and cesium europium sulfate hydrate is detected and explained by the variation of the extent of local symmetry violation at the crystallographic sites occupied by Eu3+ ions, namely, by the increase in inversion asymmetry in [CsEu(H2O)3(SO4)2]·H2O and the increase in mirror asymmetry in CsEu(SO4)2. The chemical shift of the 5D0 energy level in cesium europium sulfate hydrate, with respect to cesium europium sulfate, is associated with the presence of H2O molecules in the vicinity of Eu3+ ion.
Journal Article