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Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.

The excess of surface dangling bonds makes the formation of free-standing two-dimensional (2D) metals unstable and hence difficult to achieve. To date, only a few reports have demonstrated 2D metal formation over substrates. Here, we show a free-standing crystalline single-atom-thick layer of iron (Fe) using in situ low-voltage aberration-corrected transmission electron microscopy and supporting image simulations. First-principles calculations confirm enhanced magnetic properties for single-atom-thick 2D Fe membranes. This work could pave the way for new 2D structures to be formed in graphene membranes.

Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS 2 , MoSe 2 , WS 2 , or WSe 2 .

The discovery of graphene and carbon nanotubes (rolled-up graphene) has excited the world because their extraordinary properties promise tremendous developments in many areas. Like any materials with application potential, it needs to be fabricated in an economically viable manner and at the same time provides the necessary quality for relevant applications. Graphene and carbon nanotubes are no exception to this. In both cases, chemical vapor deposition (CVD) has emerged as the dominant synthesis route since it is already a well-established process both in industry and laboratories. In this work, we review the CVD fabrication of graphene and carbon nanotubes. Initially, we briefly introduce the materials and the CVD process. We then discuss pretreatment steps prior to the CVD reaction. The discussion then switches to the CVD process, provides comparative data for thermal CVD and plasma-enhanced CVD, and includes coverage of kinetics, thermodynamics, catalyst choice, and other aspects of growth as well as post production treatments. Finally, conclusions are drawn and presented.

Chemical vapor deposition （CVD） synthesis of large-domain hexagonal boron nitride （h-BN） with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to -72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate： the Cu （111） face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

HighlightsThe Internet of Things era related electronics were updated based on carbon nanotube transistors, radiofrequency circuits and energy storage devices.The applications in healthcare and biomedical devices were discussed including sensory, data processors and actuators.The fabrication of wafer-scale carbon nanotubes has been introduced as well as the machine learning strategy for prediction of optimal synthesis parameters.The post-Moore's era has boosted the progress in carbon nanotube-based transistors. Indeed, the 5G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices. In this perspective, we deliver the readers with the latest trends in carbon nanotube research, including high-frequency transistors, biomedical sensors and actuators, brain–machine interfaces, and flexible logic devices and energy storages. Future opportunities are given for calling on scientists and engineers into the emerging topics.

Mass production of high-quality graphene with low cost is the footstone for its widespread practical applications. We present herein a self-limited growth approach for producing graphene powders by a small-methane-flow chemical vapour deposition process on naturally abundant and industrially widely used diatomite (biosilica) substrates. Distinct from the chemically exfoliated graphene, thus-produced biomorphic graphene is highly crystallized with atomic layer-thickness controllability, structural designability and less noncarbon impurities. In particular, the individual graphene microarchitectures preserve a three-dimensional naturally curved surface morphology of original diatom frustules, effectively overcoming the interlayer stacking and hence giving excellent dispersion performance in fabricating solution-processible electrodes. The graphene films derived from as-made graphene powders, compatible with either rod-coating, or inkjet and roll-to-roll printing techniques, exhibit much higher electrical conductivity (∼110,700 S m −1 at 80% transmittance) than previously reported solution-based counterparts. This work thus puts forward a practical route for low-cost mass production of various powdery two-dimensional materials. High-volume, low-cost production of graphene is pivotal for the industrial advance of this 2D material. Here, the authors make use of naturally occurring diatomite as a 3D substrate for graphene growth, obtaining non-planar porous graphene structures after removal of the silica templates.

Hollow graphitic nanoshells (HGSs) are widely investigated as battery materials because their conductive shells and internal voids can simultaneously influence ion transport, electron percolation, and mechanical stress accommodation. Yet, the field remains largely morphology-driven, with performance often attributed generically to “hollowness” rather than to structural parameters. This review examines HGSs from a parameter-oriented perspective. It highlights key structural features, including graphitization degree, shell thickness, cavity size, pore architecture, and defect or dopant chemistry. These features collectively shape electrochemical behavior. We discuss how these features influence transport kinetics, interphase stability, volumetric efficiency, and mechanical resilience across insertion, metal anode, multivalent, solid-state, and halogen chemistries. Major synthesis approaches, including hard-templated, soft-templated, self-templated, and biomass-derived routes, are evaluated based on the structural control they provide and the influence of synthesis conditions on shell architecture, graphitic ordering, and pore structure. Special attention is given to how these structural features develop during processing and how they affect ion accessibility, conductivity, and stability. Finally, we outline a shift toward quantitative, parameter-driven engineering supported by operando diagnostics, electrode-level modeling, and standardized reporting. HGSs will only achieve practical relevance when structural optimization extends beyond particle morphology to transport uniformity, interfacial stability, network connectivity, and life-cycle responsibility.

Flexible electronics has emerged as a continuously growing field of study. Two‐dimensional (2D) materials often act as conductors and electrodes in electronic devices, holding significant promise in the design of high‐performance, flexible electronics. Numerous studies have focused on harnessing the potential of these materials for the development of such devices. However, to date, the incorporation of 2D materials in flexible electronics has rarely been summarized or reviewed. Consequently, there is an urgent need to develop comprehensive reviews for rapid updates on this evolving landscape. This review covers progress in complex material architectures based on 2D materials, including interfaces, heterostructures, and 2D/polymer composites. Additionally, it explores flexible and wearable energy storage and conversion, display and touch technologies, and biomedical applications, together with integrated design solutions. Although the pursuit of high‐performance and high‐sensitivity instruments remains a primary objective, the integrated design of flexible electronics with 2D materials also warrants consideration. By combining multiple functionalities into a singular device, augmented by machine learning and algorithms, we can potentially surpass the performance of existing wearable technologies. Finally, we briefly discuss the future trajectory of this burgeoning field. This review discusses the recent advancements in flexible sensors made from 2D materials and their applications in integrated architecture and device design. The progress was summarized in the flexible electronics empowered by the two‐dimensional materials, including electronic skins (for sweat and temperature sensors), gas sensors, touch pads, nanogenerators for mechanical energy collection, flexible supercapacitors and batteries, transistors and logic circuits, as well as memristors for neuromorphic computing. The readers may collect the stat‐of‐the‐art research on graphene and MXene based flexible electronics.

Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.