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Spectrally pure lasers, the heart of precision high-end scientific and commercial applications, are poised to make the leap from the laboratory to integrated circuits. Translating this performance to integrated photonics will dramatically reduce cost and footprint for applications such as ultrahigh capacity fibre and data centre networks, atomic clocks and sensing. Despite the numerous applications, integrated lasers currently suffer from large linewidth. Brillouin lasers, with their unique properties, offer an intriguing solution, yet bringing their performance to integrated platforms has remained elusive. Here, we demonstrate a sub-hertz (~0.7 Hz) fundamental linewidth Brillouin laser in an integrated Si3N4 waveguide platform that translates advantages of non-integrated designs to the chip scale. This silicon-foundry-compatible design supports low loss from 405 to 2,350 nm and can be integrated with other components. Single- and multiple-frequency output operation provides a versatile low phase-noise solution. We highlight this by demonstrating an optical gyroscope and a low-phase-noise photonic oscillator.

Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III–V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m−1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m−1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.We demonstrate for the first time, a uniform low temperature (<250 °C) process for fabricating both high-confinement thick and low-confinement thin ultra-low loss Silicon nitride waveguides.

Precision optical-frequency and phase synchronization over fibre is critical for a variety of applications, from timekeeping to quantum optics. Such applications utilize ultra-coherent sources based on stabilized table-top laser systems. Chip-scale versions of these systems may dramatically broaden the application landscape by reducing the cost, size and power of such exquisite sources. Links based on the required narrow-linewidth integrated lasers, compact reference cavities and control methodologies have not yet been presented. Here, we demonstrate an optically synchronized link that achieves an ultralow residual phase error variance of 3 × 10−4 rad2 at the receiver, using chip-scale stabilized lasers with laser linewidth of ~30 Hz and instability below 2 × 10−13 at 50 ms. This performance is made possible with integrated Brillouin lasers, compact reference cavities and a novel low-bandwidth optical-frequency-stabilized phase-locked loop. These results demonstrate a path towards low-power, precision applications including distributed atomic clocks, quantum links, database synchronization and digital-signal-processor-free coherent fibre interconnects.An optically synchronized precision fibre link based on two independent chip-scale cavity-stabilized stimulated Brillouin scattering lasers is demonstrated. An ultralow 3 × 10−4 rad2 residual phase error variance is achieved between the mutually coherent transmit and receive lasers.

Today’s precision experiments for timekeeping, inertial sensing, and fundamental science place strict requirements on the spectral distribution of laser frequency noise. Rubidium-based experiments utilize table-top 780 nm laser systems for high-performance clocks, gravity sensors, and quantum gates. Wafer-scale integration of these lasers is critical for enabling systems-on-chip. Despite progress towards chip-scale 780 nm ultra-narrow linewidth lasers, achieving sub-Hz fundamental linewidth and sub-kHz integral linewidth has remained elusive. Here we report a hybrid integrated 780 nm self-injection locked laser with 0.74 Hz fundamental and 864 Hz integral linewidths and thermorefractive-noise-limited 100 Hz 2 /Hz at 10 kHz. These linewidths are over an order of magnitude lower than previous photonic-integrated 780 nm implementations. The laser consists of a Fabry-Pérot diode edge-coupled to an on-chip splitter and a tunable 90 million Q resonator realized in the CMOS foundry-compatible silicon nitride platform. We achieve 2 mW output power, 36 dB side mode suppression ratio, and a 2.5 GHz mode-hop-free tuning range. To demonstrate the potential for quantum atomic applications, we analyze the laser noise influence on sensitivity limits for atomic clocks, quantum gates, and atom interferometer gravimeters. This technology can be translated to other atomic wavelengths, enabling compact, ultra-low noise lasers for quantum sensing, computing, and metrology.

Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to achieve requisite noise, stability, and tunability. Photonic integration will enable scalable, reliable and portable solutions. Here we report a hybrid-integrated external cavity widely tunable laser stabilized to a 10 m-long integrated coil-resonator, achieving record-low 3 – 7 Hz fundamental linewidth across a 60 nm tuning range and 27 – 60 Hz integral linewidth with 1.8E-13 ADEV at 6.4 ms across 40 nm, delivering orders of magnitude frequency noise and integral linewidth reduction over state of the art. Stabilization is achieved without an optical isolator, leveraging resilience to optical feedback of 30 dB beyond that of commercial DFB lasers. The laser and reference cavity are fabricated in the same Si3N4 CMOS-compatible process, unlocking a path towards fully integrated visible to ShortWave-IR frequency-stabilized lasers. Frequency stabilized lasers are critical to precision applications including quantum, metrology, and sensing. A photonic integrated widely tunable external cavity laser and platform compatible coil resonator reference provide ultra-low linewidth and frequency noise over a record wide tuning range.

Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to achieve requisite noise, stability, and tunability. Photonic integration will enable scalable, reliable and portable solutions. Here we report a hybrid-integrated external cavity widely tunable laser stabilized to a 10-meter-long integrated coil-resonator, achieving record-low 3 - 7 Hz fundamental linewidth across a 60 nm tuning range and 27 - 60 Hz integral linewidth with 1.8E-13 Allan deviation at 6.4 ms across 40 nm, delivering orders of magnitude frequency noise and integral linewidth reduction over state of the art. Stabilization is achieved without an optical isolator, leveraging resilience to optical feedback of 30 dB beyond that of commercial DFB lasers. The laser and reference cavity are fabricated in the same Si3N4 CMOS-compatible process, unlocking a path towards fully integrated visible to ShortWave-IR frequency stabilized lasers.

Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output power of 24 mW, wavelength tunability over 15 nm, and a side-mode suppression ratio exceeding 50 dB. This performance level is facilitated by careful design of a low-loss integrated silicon nitride photonic circuit serving as the external cavity combined with commercially available semiconductor gain chips. This approach demonstrates the feasibility of compact integrated lasers with sub-kHz linewidth centering on the needs of emerging sensor concepts based on ultracold atoms and can be further extended to shorter wavelengths via selection of suitable semiconductor gain media.

Laser-frequency stabilization with on-chip photonic integrated circuits will provide compact, low cost solutions to realize spectrally pure laser sources. Developing high-performance and scalable lasers is critical for applications including quantum photonics, precision navigation and timing, spectroscopy, and high-capacity fiber communications. We demonstrate a significant advance in compact, stabilized lasers to achieve a record low integral emission linewidth and precision carrier stabilization by combining integrated waveguide nonlinear Brillouin and ultra-low loss waveguide reference resonators. Using a pair of 56.4 Million quality factor (Q) Si\\(_3\\)N\\(_4\\) waveguide ring-resonators, we reduce the free running Brillouin laser linewidth by over an order of magnitude to 330 Hz integral linewidth and stabilize the carrier to 6.5\\(\\times\\)10\\(^{-13}\\) fractional frequency at 8 ms, reaching the cavity-intrinsic thermorefractive noise limit for frequencies down to 80 Hz. This work demonstrates the lowest linewidth and highest carrier stability achieved to date using planar, CMOS compatible photonic integrated resonators, to the best of our knowledge. These results pave the way to transfer stabilized laser technology from the tabletop to the chip-scale. This advance makes possible scaling the number of stabilized lasers and complexity of atomic and molecular experiments as well as reduced sensitivity to environmental disturbances and portable precision atomic, molecular and optical (AMO) solutions.

Photonic systems and technologies traditionally relegated to table-top experiments are poised to make the leap from the laboratory to real-world applications through integration. Stimulated Brillouin scattering (SBS) lasers, through their unique linewidth narrowing properties, are an ideal candidate to create highly-coherent waveguide integrated sources. In particular, cascaded-order Brillouin lasers show promise for multi-line emission, low-noise microwave generation and other optical comb applications. Photonic integration of these lasers can dramatically improve their stability to environmental and mechanical disturbances, simplify their packaging, and lower cost. While single-order silicon and cascade-order chalcogenide waveguide SBS lasers have been demonstrated, these lasers produce modest emission linewidths of 10-100 kHz. We report the first demonstration of a sub-Hz (~0.7 Hz) fundamental linewidth photonic-integrated Brillouin cascaded-order laser, representing a significant advancement in the state-of-the-art in integrated waveguide SBS lasers. This laser is comprised of a bus-ring resonator fabricated using an ultra-low loss Si3N4 waveguide platform. To achieve a sub-Hz linewidth, we leverage a high-Q, large mode volume, single polarization mode resonator that produces photon generated acoustic waves without phonon guiding. This approach greatly relaxes phase matching conditions between polarization modes, and optical and acoustic modes. Using a theory for cascaded-order Brillouin laser dynamics, we determine the fundamental emission linewidth of the first Stokes order by measuring the beat-note linewidth between and the relative powers of the first and third Stokes orders. Extension to the visible and near-IR wavebands is possible due to the low optical loss from 405 nm to 2350 nm, paving the way to photonic-integrated sub-Hz lasers for visible-light applications.