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The fundamental challenge for designing transparent conductors used in photovoltaics, displays and solid-state lighting is the ideal combination of high optical transparency and high electrical conductivity. Satisfying these competing demands is commonly achieved by increasing carrier concentration in a wide-bandgap semiconductor with low effective carrier mass through heavy doping, as in the case of tin-doped indium oxide (ITO). Here, an alternative design strategy for identifying high-conductivity, high-transparency metals is proposed, which relies on strong electron–electron interactions resulting in an enhancement in the carrier effective mass. This approach is experimentally verified using the correlated metals SrVO 3 and CaVO 3 , which, despite their high carrier concentration (>2.2 × 10 22  cm −3 ), have low screened plasma energies (<1.33 eV), and demonstrate excellent performance when benchmarked against ITO. A method is outlined to rapidly identify other candidates among correlated metals, and strategies are proposed to further enhance their performance, thereby opening up new avenues to develop transparent conductors. Electronic many-body effects are used to control the electron effective mass, and thus the plasma energy and electrical conductivity, of thin films of the correlated metals SrVO 3 and CaVO 3 , making them good candidates as transparent conductors.

An almost ideal quantum anomalous Hall state is observed in (Bi,Sb)Te films doped with vanadium. This state is reached without the application of a polarizing magnetic film, making these materials interesting for low-power electronic applications. The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two-dimensional electron layer under a strong magnetic field 1 , 2 . The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon to that of the QH effect, whereas its physical origin relies on the intrinsic spin–orbit coupling and ferromagnetism 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 . Here, we report the experimental observation of the QAH state in V-doped (Bi,Sb) 2 Te 3 films with the zero-field longitudinal resistance down to 0.00013 ± 0.00007 h / e 2 (~3.35 ± 1.76 Ω), Hall conductance reaching 0.9998 ± 0.0006 e 2 / h and the Hall angle becoming as high as 89.993° ± 0.004° at T = 25 mK. A further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field ( H c > 1.0 T) and a relative high Curie temperature. This realization of a robust QAH state in hard ferromagnetic topological insulators (FMTIs) is a major step towards dissipationless electronic applications in the absence of external fields.

The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. However, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Here, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dissipationless spin-textured spintronic applications. The coexistence of chiral edge states and chiral spin textures in magnetic topological insulator sandwiches provides a platform for proof-of-concept dissipationless spin-textured spintronic applications.

A topological insulator (TI) interfaced with an s -wave superconductor has been predicted to host topological superconductivity. Although the growth of epitaxial TI films on s -wave superconductors has been achieved by molecular-beam epitaxy, it remains an outstanding challenge for synthesizing atomically thin TI/superconductor heterostructures, which are critical for engineering the topological superconducting phase. Here we used molecular-beam epitaxy to grow Bi 2 Se 3 films with a controlled thickness on monolayer NbSe 2 and performed in situ angle-resolved photoemission spectroscopy and ex situ magnetotransport measurements on these heterostructures. We found that the emergence of Rashba-type bulk quantum-well bands and spin-non-degenerate surface states coincides with a marked suppression of the in-plane upper critical magnetic field of the superconductivity in Bi 2 Se 3 /monolayer NbSe 2 heterostructures. This is a signature of a crossover from Ising- to Rashba-type superconducting pairings, induced by altering the Bi 2 Se 3 film thickness. Our work opens a route for exploring a robust topological superconducting phase in TI/Ising superconductor heterostructures. Using molecular-beam epitaxy, we synthesize heterostructures of topological insulator Bi 2 Se 3 and the Ising superconductor monolayer NbSe 2 . By changing the Bi 2 Se 3 thickness, they demonstrate a crossover from Ising- to Rashba-type superconducting pairing.

One-dimensional chiral interface channels can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction may function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a one-dimensional junction. For the junction between Chern numbers of 1 and −1, we observe quantized transport and demonstrate the appearance of the two parallel propagating chiral interface channels along the magnetic domain wall at zero magnetic field. For the junction between Chern numbers of 1 and 2, our quantized transport shows that a single chiral interface channel appears at the interface. Our work lays the foundation for the development of QAH insulator-based electronic and spintronic devices and topological chiral networks. Quantum anomalous Hall junctions show great promise for advancing next-generation electronic circuits. Here, the authors demonstrate a scalable method for synthesizing heterostructures of magnetic topological insulators with regions of distinct Chern numbers and characterize the chiral interface modes that emerge at the interface.

The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker–Coddington network model. We extract a critical exponent κ ~ 0.38 ± 0.02 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker–Coddington model at ν ~ 2.6, rather than the generally-accepted value of 2.33. Understanding the critical scaling behaviors of quantum phase transitions can provide profound physical implications. Here, the authors report temperature dependence of the derivative of longitudinal resistance at a magnetic-field induced quantum phase transition between the quantum anomalous Hall insulator to the axion insulator in magnetic topological insulator sandwich samples.

An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi 2 Te 4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase. A zero Hall conductance plateau has been taken as evidence of the axion insulator state in magnetically doped topological insulator heterostructures, but it can also originate from surface state hybridization. Here the authors establish such a state in a ~106 nm thick sample, where hybridization is negligible.

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications. Berry curvature connects to exotic electronic phases hence it provides important insights to understand quantum materials. Here, the authors report sign change of the anomalous Hall effect resulted from Berry curvature change at the interface of a topological insulator/magnetic topological insulator heterostructure.

Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement. TSC can be created in electronic systems where the topological and superconducting orders coexist, motivating the continued exploration of candidate material platforms to this end. Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host emergent interfacial superconductivity when a non-superconducting antiferromagnet (FeTe) is interfaced with a topological insulator (TI) (Bi, Sb) 2 Te 3 . By performing in-vacuo angle-resolved photoemission spectroscopy (ARPES) and ex-situ electrical transport measurements, we find that the superconducting transition temperature and the upper critical magnetic field are suppressed when the chemical potential approaches the Dirac point. We provide evidence to show that the observed interfacial superconductivity and its chemical potential dependence is the result of the competition between the Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling mediated by Dirac surface states and antiferromagnetic exchange couplings that generate the bicollinear antiferromagnetic order in the FeTe layer. The authors study (Bi,Sb) 2 Te 3 /FeTe bilayers, which feature emergent superconductivity at the interface with T c  ~ 12 K. Through angle-resolved photoemission spectroscopy and electrical transport measurements, they argue that the Dirac-fermion-mediated Ruderman-Kittel-Kasuya-Yosida-type interaction weakens antiferromagnetic order in FeTe layer, allowing for superconductivity.

A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h /( Ce 2 ) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer) 1 , 2 . The QAH effect has been realized in magnetic topological insulators 3 – 9 and magic-angle twisted bilayer graphene 10 , 11 . However, the QAH effect at zero magnetic field has so far been realized only for C  = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C  = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. The realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects. The number of edge channels in quantum anomalous Hall insulators is controlled by varying either the magnetic dopant concentration or the interior spacer layer thickness, yielding Chern numbers up to 5.