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Background Periodontitis has increasingly been recognized for its impact on systemic health. Mendelian Randomization (MR), an emerging causal inference method, effectively overcomes confounding biases in observational studies. To systematically evaluate the causal relationship between periodontitis and various systemic diseases through a meta-analysis of mendelian randomization studies. Methods The China National Knowledge Infrastructure, WanFang data, PubMed, Web of Science and Science Direct were searched for mendelian randomization studies on periodontitis in relation to systemic disorders. Meta-analysis was performed on data gathered using the inverse-variance weighted and mendelian randomization-Egger methods. Results A total of 610 records was screened. The systematic review included 78 mendelian randomization experiments, while the meta-analysis included 34. There was strong evidence linking periodontitis to an increased risk of cardioembolic stroke and depression. However, the data showed that periodontitis had no substantial causal association with Alzheimer’s disease, Parkinson’s disease, coronary atherosclerosis, rheumatoid arthritis, hypothyroidism, hyperthyroidism, gastric cancer, psoriasis, Sjögren’s syndrome, or inflammatory bowel disease. Conclusions The evidence from mendelian randomization studies suggests that periodontitis plays a causal role in in cardioembolic stroke and depression. However, the rest of the findings differ from those of earlier observational research. As a result, future research should focus on resolving these constraints using bigger, more diverse populations and investigating the molecular mechanisms behind the observed relationships. Trial registration The PROSPERO database lists this meta-analysis under the registration number CRD42024581585.

In view of the increasing scope, scale and quantity of landslide, debris flow and other geological disasters and without achieving long-term stable high-precision monitoring in the exist, a solution algorithm on RTK high-precision differential positioning deformation is presented in this paper. The algorithm uses high-precision board receiver as the satellite positioning reference station, the u-blox receiver as the monitoring station. The carrier phase double difference relative positioning model is based on the carrier phase observation and pseudo range observation, combined with the RTK unscented Kalman filter model and smooth filtering algorithm, and then more accurate position results are obtained. This method can be used to calculate the position of deformation monitoring body with high precision, which is simple, easy to realize and practical. The positioning accuracy of deformation monitoring is higher. After smoothing, the horizontal precision can reach 3mm, and the elevation precision can reach 5mm.

Landslide is one of the most harmful geological disasters in the world. In order to effectively warn the landslide, Kalman filter is used to smooth the real-time Kinematic (RTK) positioning information of each monitoring point, remove outliers, improve monitoring accuracy, and extract information such as effective displacement. The attitude computation algorithm is used to solve the real-time attitude of the monitoring target, and the attitude prediction is realized which based on the deformation prediction information. Use the extended Kalman filter to realize the fusion of displacement deformation, velocity and acceleration data at multiple sites in the monitoring network, and to achieve the optimal estimation of comprehensive displacement. Use the MGM (1,1) gray model algorithm to realize the deformation displacement prediction. Use the comprehensive information amount to judge the landslide deformation grade. The early-warning algorithm is simple, easy to implement and practical, and can meet the actual requirements of landslide deformation early-warning.

Beyond conventional electrical modulation, flexoelectricity enables mechanical control of ferroelectric polarizations, offering a pathway for tactile-responsive ferroelectric systems. However, mechanical polarization switching typically requires substantial static threshold forces to overcome the significant energy barrier, resulting in material fatigue and slow response that compromises reliability and hinders practical applications. In this work, we address these challenges by introducing an imprint field through asymmetric electrostatic boundary design with distinct work functions. This built-in electric field stabilizes the energy landscape, effectively lowering the polarization switching barrier. Subsequently, nonvolatile polarization switching with a low threshold force of 12 nN·nm −1 is achieved in CuInP 2 S 6 without material damage. Surpassing the limitations of slow static force controls, our work marks the first experimental demonstration of fast mechanical control of polarization switching with 4 millisecond-long low force pulses. To further highlight the potential of this rapid, low-force mechanical control, we propose a van der Waals heterostructured mechanically gated transistor with asymmetric electrostatic boundary, which exhibits gate force pulses-controlled multi-level, nonvolatile conductance states. Our findings establish a paradigm for next-generation ferroelectric electronics that integrate responsiveness to mechanical stimuli. Enabled by imprint field, the authors achieve flexoelectric switching in thin ferroelectrics with millisecond low-force pulses. A mechanically gated transistor with nonvolatile, multi-level states shows promise for tactile-sensing applications.

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS 2 and ambipolar WSe 2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS 2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe 2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.

Photosynthetic organisms use different means to regulate their photosynthetic activity in respond to different light conditions under which they grow. In this study, we analyzed changes in the photosystem I (PSI) light-harvesting complex I (LHCI) supercomplex from a red alga Cyanidioschyzon merolae, upon growing under three different light intensities, low light (LL), medium light (ML), and high light (HL). The results showed that the red algal PSI-LHCI is separated into two bands on blue-native PAGE, which are designated PSI-LHCI-A and PSI-LHCI-B, respectively, from cells grown under LL and ML. The former has a higher molecular weight and binds more Lhcr subunits than the latter. They are considered to correspond to the two types of PSI-LHCI identified by cryo-electron microscopic analysis recently, namely, the former with five Lhcrs and the latter with three Lhcrs. The amount of PSI-LHCI-A is higher in the LL-grown cells than that in the ML-grown cells. In the HL-grown cells, PSI-LHCI-A completely disappeared and only PSI-LHCI-B was observed. Furthermore, PSI core complexes without Lhcr attached also appeared in the HL cells. Fluorescence decay kinetics measurement showed that Lhcrs are functionally connected with the PSI core in both PSI-LHCI-A and PSI-LHCI-B obtained from LL and ML cells; however, Lhcrs in the PSI-LHCI-B fraction from the HL cells are not coupled with the PSI core. These results indicate that the red algal PSI not only regulates its antenna size but also adjusts the functional connection of Lhcrs with the PSI core in response to different light intensities.

A rapid, sensitive and specific method for the simultaneous quantification of resibufogenin (RBG) and 3-epi-resibufogenin (3-ERBG) in rat plasma was developed by using a liquid–liquid extraction procedure and liquid chromatography–electrospray ionization/tandem mass spectrometric (LC–ESI–MS/MS) analysis. The separation was performed by HPLC on a reversed phase C18 HPLC column (150 × 2.1 mm, 3.5 μm) using a mobile phase of acetonitrilel-0.1% formic acid aqueous solution (45:55, v/v). The determination was performed by a triple-quadrupole mass spectrometer in the multiple reaction monitoring using positive mode of electrospray ionization (ESI). The calibration curves were both linear (R > 0.995) over the concentration range of 3.0–5,000 ng mL−1, and the lower limits of quantification were 3.0 ng mL−1 for both RBG and 3-ERBG. The intra-day and inter-day precisions (% RSD) were all less than 15%, and the accuracies (%RE) were within the range of ±15%. The mean recoveries of RBG, 3-ERBG and IS were over 82.7, 84.8 and 90.0% (n = 6), respectively. The method was proved to be rapid, sensitive and specific, and has been successfully applied to determine RBG and its major metabolite 3-ERBG in rat plasma after oral administration of RBG for pharmacokinetic study. Comparison of pharmacokinetic data with anti-tumor activities of RBG and ERBG suggested that 3-ERBG, as a major metabolite of RBG in rats, was perhaps also a bioactive form of RBG in vivo.

Photonic integrated circuits (PICs) generate, route, and process light with high efficiency, scalability, and functional density on a single chip. Yet the tightly confined on-chip modes can not easily access or effectively interact with atomic vapors, fluids, gain media, and biological samples. Existing approaches require bringing the medium onto the chip or into a weak, tightly confined evanescent field, which restricts the interaction volume and the range of accessible media. Here, we demonstrate a re-entrant chip-free-space interface in which a thin-film lithium niobate circuit frequency-doubles telecom light, emits the 780~nm field through a Rubidium vapor cell, and recollects the reflected probe on the same chip. This emit-interact-recollect loop resolves the saturated absorption spectrum and stabilizes the telecom laser to within \\( 280\\)~kHz over 2 hours. Our study paves an route to embed external media into PICs through the re-entrant photonic interface.

Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both thermionic emission and quantum tunneling can significantly reduce the contact resistance and boost the electron transport from the semiconductor to the metal, but has negligible effects on the electron transport oppositely. We also investigate the negative barrier height with the concept of carrier collection barrier, and show its critical role at the drain end for determining the overall transistor performance.

Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the \"Boltzmann tyranny\" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a novel graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic cooling effect with the effective electron temperature of ~145 K in the monolayer MoS2, which enable the transport factor lowering and thus the steep-slope switching (across for 3 decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 A/m) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the great potential of 2D Dirac-source cold electron transistor as an innovative steep-slope transistor concept, and provides new opportunities for 2D materials toward future energy-efficient nanoelectronics.