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The cold emission of particles from surfaces under intense electric fields is a process which underpins a variety of applications including atom probe tomography (APT), an analytical microscopy technique with near-atomic spatial resolution. Increasingly relying on fast laser pulsing to trigger the emission, APT experiments often incorporate the detection of molecular ions emitted from the specimen, in particular from covalently or ionically bonded materials. Notably, it has been proposed that neutral molecules can also be emitted during this process. However, this remains a contentious issue. To investigate the validity of this hypothesis, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modeling of ion trajectories, and the application of density-functional theory simulations to derive molecular ion energetics. It is shown that the direct thermal emission of neutral molecules is extremely unlikely. However, neutrals can still be formed in the course of an APT experiment by dissociation of metastable molecular ions.

Electron microscopy touches on nearly every aspect of modern life, underpinning materials development for quantum computing, energy and medicine. We discuss the open, highly integrated and data-driven microscopy architecture needed to realize transformative discoveries in the coming decade.

Rigorous electrostatic modeling of the specimen electrode environment is required to better understand the fundamental processes of atom probe tomography (APT) and guide the analysis of APT data. We have developed a simulation tool that self-consistently solves the nonlinear electrostatic Poisson equation along with the mobile charge carrier concentrations and provides a detailed picture of the electrostatic environment of APT specimen tips. We consider cases of metals, semiconductors, and dielectrics. Traditionally in APT, and regardless of specimen composition, the apex electric field E apex has been approximated by the relation E apex = S V / ( k r ) , which was originally derived for sharp, metallic conductors; we refer to this equation as the “K-factor approximation”. Here, SV is tip-electrode bias, r is the radius of curvature of the tip apex, and k is a dimensionless fitting parameter with 1.5 < k < 8.5 . As expected, our Poisson solver agrees well with the k-factor approximation for metal tips; it also agrees remarkably well for semiconductor tips-regardless of the semiconductor doping level. We ascribe this finding to the fact that even if a semiconductor tip is fully depleted of majority carriers under the typical SV conditions used in APT, an inversion layer will appear at the apex surface. The inversion forms a thin, conducting layer that screens the interior of the tip, thus mimicking metallic behavior at the apex surface. By contrast, we find that the k-factor approximation yields a very poor representation of the electrostatics of a purely dielectric tip. We put our numerical results into further context with a brief discussion of our own separate work and the results of other publications.

This paper describes initial experimental results from an extreme ultraviolet (EUV) radiation-pulsed atom probe microscope. Femtosecond-pulsed coherent EUV radiation of 29.6 nm wavelength (41.85 eV photon energy), obtained through high harmonic generation in an Ar-filled hollow capillary waveguide, successfully triggered controlled field ion emission from the apex of amorphous SiO 2 specimens. The calculated composition is stoichiometric within the error of the measurement and effectively invariant of the specimen base temperature in the range of 25 K to 150 K. Photon energies available in the EUV band are significantly higher than those currently used in the state-of-the-art near-ultraviolet laser-pulsed atom probe, which enables the possibility of additional ionization and desorption pathways. Pulsed coherent EUV light is a new and potential alternative to near-ultraviolet radiation for atom probe tomography.

Carbon nanotubes are one of the most promising nanomaterials available with applications in electronics devices, sensing, batteries, composites and medicine. Strict control of the carbon nanotube chemistry and properties is necessary as the applications proceed into more specialized areas. Thermogravimetric analysis (TGA) is one analytical method currently utilized for the characterization of carbon nanotubes. Though TGA can provide quantitative measurements of the composition of a sample, many researchers do not ensure the variance of the sample is properly captured. This research demonstrates for four single-wall carbon nanotube (SWCNT) samples how to statistically evaluate the material with TGA to ensure that the variance within the material is represented. SEM results are used to help reach conclusions about purity of the material by providing a visual means for inspection. This data is used to select the SWCNT material with the lowest variability and highest quality, as evaluated by composition and reproducibility.

Six types of commercially available multiwall carbon nanotube soot were obtained and prepared into buckypapers by pellet pressing and by filtration into a paper. These samples were evaluated with respect to thickness, compressibility and electrical conductivity. DC conductivity results by two-point and four-point (van der Pauw) measurement methods as a function of preparation parameters are presented. Topology was investigated qualitatively by way of scanning electron microscopy and helium ion microscopy and from this, some generalizations about the nanotube structural properties and manufacturing technique with respect to conductivity are given.