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When miniaturizing fluidic circuitry, the solid walls of the fluid channels become increasingly important 1 because they limit the flow rates achievable for a given pressure drop, and they are prone to fouling 2 . Approaches for reducing the wall interactions include hydrophobic coatings 3 , liquid-infused porous surfaces 4 – 6 , nanoparticle surfactant jamming 7 , changes to surface electronic structure 8 , electrowetting 9 , 10 , surface tension pinning 11 , 12 and use of atomically flat channels 13 . A better solution may be to avoid the solid walls altogether. Droplet microfluidics and sheath flow achieve this but require continuous flow of the central liquid and the surrounding liquid 1 , 14 . Here we demonstrate an approach in which aqueous liquid channels are surrounded by an immiscible magnetic liquid, both of which are stabilized by a quadrupolar magnetic field. This creates self-healing, non-clogging, anti-fouling and near-frictionless liquid-in-liquid fluidic channels. Manipulation of the field provides flow control, such as valving, splitting, merging and pumping. The latter is achieved by moving permanent magnets that have no physical contact with the liquid channel. We show that this magnetostaltic pumping method can be used to transport whole human blood with very little damage due to shear forces. Haemolysis (rupture of blood cells) is reduced by an order of magnitude compared with traditional peristaltic pumping, in which blood is mechanically squeezed through a plastic tube. Our liquid-in-liquid approach provides new ways to transport delicate liquids, particularly when scaling channels down to the micrometre scale, with no need for high pressures, and could also be used for microfluidic circuitry. Wall-free liquid channels surrounded by an immiscible magnetic liquid can be used to create liquid circuitry or to transport human blood without damaging the blood cells by moving permanent magnets.

Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd-based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in films of the half-metallic ferrimagnetic Heusler alloys Mn 2 Ru x Ga, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit a compensation point above room temperature. Observation of the effect in compensated ferrimagnets without Gd challenges our understanding of all-optical switching. The dynamic behavior indicates that Mn 2 Ru x Ga switches in 2 ps or less. Our findings widen the basis for fast optical switching of magnetization and break new ground for engineered materials that can be used for nonvolatile ultrafast switches using ultrashort pulses of light. Femtosecond laser pulses allow for extremely fast switching of magnetization in ferromagnetic films, but all examples so far contained gadolinium. Here the authors demonstrate room temperature all-optical toggle switching in a ferrimagnetic manganese-based half-metal without gadolinium.

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 . One major challenge for antiferromagnetic spintronics is how to control the antiferromagnetic state. Here Jani et al. demonstrate the reversible ionic control of the room-temperature magnetic anisotropy and spin reorientation transition in haematite, via the incorporation and removal of hydrogen.

A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an external magnetic field. Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin–orbit torque (SOT) 1 , 2 , 3 , 4 is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier 5 . A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer 6 . The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.

Oxides of non-magnetic cations exhibit elusive signs of weak temperature-independent ferromagnetism. The effect is associated with surface defects, but it defies conventional explanation. Possible hypotheses are a spin-split defect impurity band, or giant orbital paramagnetism related to zero-point vacuum fluctuations.

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

Dilute ferromagnetic oxides having Curie temperatures far in excess of 300 K and exceptionally large ordered moments per transition-metal cation challenge our understanding of magnetism in solids. These materials are high- k dielectrics with degenerate or thermally activated n-type semiconductivity. Conventional super-exchange or double-exchange interactions cannot produce long-range magnetic order at concentrations of magnetic cations of a few percent. We propose that ferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band. The Curie temperature in the mean-field approximation varies as ( xδ ) 1/2 where x and δ are the concentrations of magnetic cations and donors, respectively. High Curie temperatures arise only when empty minority-spin or majority-spin d states lie at the Fermi level in the impurity band. The magnetic phase diagram includes regions of semiconducting and metallic ferromagnetism, cluster paramagnetism, spin glass and canted antiferromagnetism.

The anomalous Hall effect is allowed by symmetry in some non-collinear antiferromagnets and is associated with Bloch-band topological features. This topological anomalous Hall effect is of interest in the development of low-power electronic devices, but such devices are likely to demand electrical control over the effect. Here we report the observation of the anomalous Hall effect in high-quality thin films of the cubic non-collinear antiferromagnet Mn 3 Pt epitaxially grown on ferroelectric BaTiO 3 substrates. We demonstrate that epitaxial strain can alter the anomalous Hall conductivity of the Mn 3 Pt films by more than an order of magnitude. Furthermore, we show that the anomalous Hall effect can be turned on and off by applying a small electric field to the BaTiO 3 substrate when the heterostructure is at a temperature of around 360 K and the Mn 3 Pt is close to the phase transition between a low-temperature non-collinear antiferromagnetic state and a high-temperature collinear antiferromagnetic state. The switching effect is due to piezoelectric strain transferred from the BaTiO 3 substrate to the Mn 3 Pt film by interfacial strain mediation. The anomalous Hall effect has been observed in high-quality epitaxial thin films of non-collinear antiferromagnet Mn 3 Pt, and can be switched on and off using an electric field.

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO 3 , with electron–hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO 3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron–hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems. An ambipolar ferromagnet with both electron- and hole-doped ferromagnetism in a single material would facilitate understanding of ferromagnetic semiconductors for spintronic applications. Here the authors demonstrate ambipolar ferromagnetism in LaMnO 3 , using ionic liquid gating enabled electrostatic doping to produce electron–hole asymmetry.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.