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Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices 1 , 2 . This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively 3 ) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects 4 . Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance 5 , perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance 6 . The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions 7 and with local strain 8 , both of which make devices less stable 9 . Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process 10 , 11 , we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices. Photoemission electron microscopy images of trap states in halide peroskites, spatially correlated with their structural and compositional factors, may help in managing power losses in optoelectronic applications. 

Interlayer excitons (ILXs) — electron–hole pairs bound across two atomically thin layered semiconductors — have emerged as attractive platforms to study exciton condensation 1 – 4 , single-photon emission and other quantum information applications 5 – 7 . Yet, despite extensive optical spectroscopic investigations 8 – 12 , critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, in a WSe 2 /MoS 2 heterostructure, we captured images of the time-resolved and momentum-resolved distribution of both of the particles that bind to form the ILX: the electron and the hole. We thereby obtain a direct measurement of both the ILX diameter of around 5.2 nm, comparable with the moiré-unit-cell length of 6.1 nm, and the localization of its centre of mass. Surprisingly, this large ILX is found pinned to a region of only 1.8 nm diameter within the moiré cell, smaller than the size of the exciton itself. This high degree of localization of the ILX is backed by Bethe–Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, allowing the formation of extended arrays of localized excitations for quantum technology. Imaging the electron and hole that bind to form interlayer excitons in a 2D moiré material enables direct measurement of its diameter and indicates the localization of its centre of mass.

The flow of photoexcited electrons in a type-II heterostructure can be imaged with energy, spatial and temporal resolution. Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 . At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields 3 , 9 or by the excitation of photocarriers 2 , 4 , 5 , 8 . Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump–probe techniques with spectroscopic photoemission electron microscopy 10 , 11 , 12 , 13 , we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

With their long lifetime and protection against decoherence, dark excitons in monolayer semiconductors offer a promising route for quantum technologies. Optical techniques have previously observed dark excitons with a long-lived valley polarization. However, several aspects remain unknown, such as the populations and time evolution of the different valley-polarized dark excitons and the role of excitation conditions. Here, using time- and angle-resolved photoemission spectroscopy, we obtain a holistic view of the dynamics after valley-selective photoexcitation. By varying experimental conditions, we reconcile between the rapid valley depolarization previously reported in TR-ARPES, and the observation of long-lived valley polarized dark excitons in optical studies. For the latter, we find that momentum-dark excitons largely dominate at early times sustaining a 40% degree of valley polarization, while valley-polarized spin-dark states dominate at longer times. Our measurements provide the timescales and how the different dark excitons contribute to the previously observed long-lived valley polarization in optics. The authors showcase the capabilities of time-resolved momentum microscopy to image spin- and valley-resolved excitons in monolayer WS₂ with high energy resolution, revealing distinct long-lived, valley-polarized dark excitons that dominate at different timescales.

Single-photon emission from the nitrogen-vacancy defect in diamond constitutes one of its many proposed applications. Owing to its doubly degenerate 3 E electronic excited state, photons from this defect can be emitted by two optical transitions with perpendicular polarization. Previous measurements have indicated that orbital-selective photoexcitation does not, however, yield photoluminescence with well-defined polarizations, thus hinting at orbital-averaging dynamics even at cryogenic temperatures. Here we employ femtosecond polarization anisotropy spectroscopy to investigate the ultrafast electronic dynamics of the 3 E state. We observe subpicosecond electronic dephasing dynamics even at cryogenic temperatures, up to five orders of magnitude faster than dephasing rates suggested by previous frequency- and time-domain measurements. Ab initio molecular dynamics simulations assign the ultrafast depolarization dynamics to nonadiabatic transitions and phonon-induced electronic dephasing between the two components of the 3 E state. Our results provide an explanation for the ultrafast orbital averaging that exists even at cryogenic temperatures. Understanding ultrafast dynamics of excited states of nitrogen-vacancy helps its manipulation for technological applications. Here the authors use polarization anisotropy spectroscopy and molecular dynamics to investigate sub-picosecond dephasing dynamics, identifying the origin of orbital averaging effects.

In this study, the frequency down-conversion of terahertz waves is analytically and experimentally demonstrated at the temporal boundaries within a GaAs waveguide. The temporal boundary is established by photoexciting the top surface of the waveguide, thereby instantaneously increasing its electrical conductivity. This photoexcited waveguide supports a transverse electromagnetic (TEM) mode with a frequency lower than those of the transverse magnetic (TM) modes present in the original waveguide. At the temporal boundary, the incident TM mode couples with the TEM mode, resulting in frequency down-conversion. Subtracting the propagation loss from the frequency-converted components indicates that the frequency conversion occurs with an efficiency consistent with the analytical predictions. The propagation loss is primarily due to ohmic loss, caused by the finite electrical conductivity of the photoexcited region. Given that the frequency of transverse electric modes is up-converted at the temporal boundary, our findings suggest that the direction of frequency conversion (upward or downward) can be controlled by manipulating the incident polarization. The polarization-dependent frequency conversion in waveguides holds significant potential for applications in devices designed for the interconversion of terahertz signals across various frequency channels. This capability is instrumental in the development of frequency-division-multiplexed terahertz wave communication systems, thereby enabling high data transfer rates.

Strong plasmon–exciton coupling between tightly-bound excitons in organic molecular semiconductors and surface plasmons in metal nanostructures has been studied extensively for a number of technical applications, including low-threshold lasing and room-temperature Bose-Einstein condensates. Typically, excitons with narrow resonances, such as J-aggregates, are employed to achieve strong plasmon–exciton coupling. However, J-aggregates have limited applications for optoelectronic devices compared with organic conjugated polymers. Here, using numerical and analytical calculations, we demonstrate that strong plasmon–exciton coupling can be achieved for Ag-conjugated polymer core-shell nanostructures, despite the broad spectral linewidth of conjugated polymers. We show that strong plasmon–exciton coupling can be achieved through the use of thick shells, large oscillator strengths, and multiple vibronic resonances characteristic of typical conjugated polymers, and that Rabi splitting energies of over 1000 meV can be obtained using realistic material dispersive relative permittivity parameters. The results presented herein give insight into the mechanisms of plasmon–exciton coupling when broadband excitonic materials featuring strong vibrational–electronic coupling are employed and are relevant to organic optoelectronic devices and hybrid metal–organic photonic nanostructures.

Drug delivery systems have the potential to deliver high concentrations of drug to target areas on demand, while elsewhere and at other times encapsulating the drug, to limit unwanted actions. Here we show proof of concept in vivo and ex vivo tests of a novel drug delivery system based on hollow-gold nanoparticles tethered to liposomes (HGN-liposomes), which become transiently permeable when activated by optical or acoustic stimulation. We show that laser or ultrasound simulation of HGN-liposomes loaded with the GABAA receptor agonist, muscimol, triggers rapid and repeatable release in a sufficient concentration to inhibit neurons and suppress seizure activity. In particular, laser-stimulated release of muscimol from previously injected HGN-liposomes caused subsecond hyperpolarizations of the membrane potential of hippocampal pyramidal neurons, measured by whole cell intracellular recordings with patch electrodes. In hippocampal slices and hippocampal–entorhinal cortical wedges, seizure activity was immediately suppressed by muscimol release from HGN-liposomes triggered by laser or ultrasound pulses. After intravenous injection of HGN-liposomes in whole anesthetized rats, ultrasound stimulation applied to the brain through the dura attenuated the seizure activity induced by pentylenetetrazol. Ultrasound alone, or HGN-liposomes without ultrasound stimulation, had no effect. Intracerebrally-injected HGN-liposomes containing kainic acid retained their contents for at least one week, without damage to surrounding tissue. Thus, we demonstrate the feasibility of precise temporal control over exposure of neurons to the drug, potentially enabling therapeutic effects without continuous exposure. For future application, studies on the pharmacokinetics, pharmacodynamics, and toxicity of HGN-liposomes and their constituents, together with improved methods of targeting, are needed, to determine the utility and safety of the technology in humans.

Quantum confinement effects offer a more comprehensive understanding of the fundamental processes that drive extreme optical nonlinearities in nano-engineered solids, opening a route to unlocking the potential of high-order harmonic generation.

The transient terahertz (THz) pulse with high peak field has become an important tool for matter manipulation, enabling many applications such as nonlinear spectroscopy, particle acceleration, and high harmonic generation. Among the widely used THz generation techniques, optical rectification in lithium niobate (LN) has emerged as a powerful method to achieve high fields at low THz frequencies, suitable to exploring novel nonlinear phenomena in condensed matter systems. In this review, we focus on introducing single- to few-cycle THz generation in LN, including the basic principles, techniques, latest developments, and current limitations. We will first discuss the phase matching requirements of LN, which leads to Cherenkov-like radiation, and the tilted pulse front (TPF) technique. Emphasis will be put on the TPF technique, which has been shown to improve THz generation efficiency, but still has many limitations. Different geometries used to produce continuous and discrete TPF will be systematically discussed. We summarize the advantages and limitations of current techniques and future trends.