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Scientists have realized a graphene electro-optic modulator operating with a 30 GHz bandwidth and with a state-of-the-art modulation efficiency of 1.5 dB V −1 , paving the way for fast digital communications. Graphene has generated exceptional interest as an optoelectronic material 1 , 2 because its high carrier mobility 3 , 4 and broadband absorption 5 promise to make extremely fast and broadband electro-optic devices possible 6 , 7 , 8 , 9 . Electro-optic graphene modulators previously reported, however, have been limited in bandwidth to a few gigahertz 10 , 11 , 12 , 13 , 14 , 15 because of the large capacitance required to achieve reasonable voltage swings. Here, we demonstrate a graphene electro-optic modulator based on resonator loss modulation at critical coupling 16 that shows drastically increased speed and efficiency. Our device operates with a 30 GHz bandwidth and with a state-of-the-art modulation efficiency of 15 dB per 10 V. We also show the first high-speed large-signal operation in a graphene modulator, paving the way for fast digital communications using this platform. The modulator uniquely uses silicon nitride waveguides, an otherwise completely passive material platform, with promising applications for ultra-low-loss broadband structures and nonlinear optics.

Optical frequency combs are a revolutionary light source for high-precision spectroscopy because of their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared spectral region (2–20 μm) is important for molecular gas detection owing to the presence of a large number of absorption lines in this wavelength regime. Microresonator-based frequency comb sources can provide a compact and robust platform for comb generation that can operate with relatively low optical powers. However, material and dispersion engineering limitations have prevented the realization of an on-chip integrated mid-infrared microresonator comb source. Here we demonstrate a complementary metal–oxide–semiconductor compatible platform for on-chip comb generation using silicon microresonators, and realize a broadband frequency comb spanning from 2.1 to 3.5 μm. This platform is compact and robust and offers the potential to be versatile for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions. Optical frequency combs in the mid-infrared are required for molecular gas detection applications but their realization in compact microresonator-based platforms is challenging. Here, Griffith et al . demonstrate on-chip broadband comb generation on a silicon microresonator spanning from 2.1 to 3.5 μm.

Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene modulators previously reported, however, have been limited in bandwidth to a few gigahertz because of the large capacitance required to achieve reasonable voltage swings. Here, we demonstrate a graphene electro-optic modulator based on resonator loss modulation at critical coupling that shows drastically increased speed and efficiency. Our device operates with a 30GHz bandwidth and with a state-of-the-art modulation efficiency of 15dB per 10V. We also show the first high-speed large-signal operation in a graphene modulator, paving the way for fast digital communications using this platform. The modulator uniquely uses silicon nitride waveguides, an otherwise completely passive material platform, with promising applications for ultra-low-loss broadband structures and nonlinear optics.

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an array of possibilities for silicon photonics including photonics on DRAM and flexible substrates.

Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb source past 2.55 um. Although silicon could in principle provide a CMOS compatible platform for on-chip comb generation deep into the mid-IR, to date, silicon's linear and nonlinear losses have prevented the realization of a microresonator-based comb source. Here we overcome these limitations and realize a broadband frequency comb spanning from 2.1 um to 3.5 um and demonstrate its viability as a spectroscopic sensing platform. Such a platform is compact and robust and offers the potential to be versatile and durable for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.

Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene modulators reported to date, however, have been limited in bandwidth to a few GHz because of the large capacitance required to achieve reasonable voltage swings. Here we demonstrate a graphene electro-optic modulator based on the classical Zeno effect that shows drastically increased speed and efficiency. Our device operates with a 30 GHz bandwidth, over an order of magnitude faster than prior work, and a state-of-the-art modulation efficiency of 1.5 dB/V. We also show the first high-speed large-signal operation in a graphene modulator, paving the way for fast digital communications using this platform. The modulator uniquely uses silicon nitride waveguides, an otherwise completely passive material platform, with promising applications for ultra-low-loss broadband structures and nonlinear optics.

Receptor-interacting protein kinase-3 （RIP3 or RIPK3） is an essential part of the cellular machinery that executes ＂programmed＂ or ＂regulated＂ necrosis. Here we show that programmed necrosis is activated in response to many chemotherapeutic agents and contributes to chemotherapy-induced cell death. However, we show that RIP3 expres- sion is often silenced in cancer cells due to genomic methylation near its transcriptional start site, thus RIP3-depen- dent activation of MLKL and downstream programmed necrosis during chemotherapeutic death is largely repressed. Nevertheless, treatment with hypomethylating agents restores RIP3 expression, and thereby promotes sensitivity to chemotherapeutics in a RIP3-dependent manner. RIP3 expression is reduced in tumors compared to normal tissue in 85% of breast cancer patients, suggesting that RIP3 deficiency is positively selected during tumor growth/develop- ment. Since hypomethylating agents are reasonably well-tolerated in patients, we propose that RIP3-deficient cancer patients may benefit from receiving hypomethylating agents to induce RIP3 expression prior to treatment with con- ventional chemotherapeutics.

Precise control of morphology and optical response of 3-dimensional chiral nanoparticles remain as a significant challenge. This work demonstrates chiral gold nanoparticle synthesis using single-stranded oligonucleotide as a chiral shape modifier. The homo-oligonucleotide composed of Adenine nucleobase specifically show a distinct chirality development with a dissymmetric factor up to g ~ 0.04 at visible wavelength, whereas other nucleobases show no development of chirality. The synthesized nanoparticle shows a counter-clockwise rotation of generated chiral arms with approximately 200 nm edge length. The molecular dynamics and density functional theory simulations reveal that Adenine shows the highest enantioselective interaction with Au(321) R/S facet in terms of binding orientation and affinity. This is attributed to the formation of sequence-specific intra-strand hydrogen bonding between nucleobases. We also found that different sequence programming of Adenine-and Cytosine-based oligomers result in chiral gold nanoparticles’ morphological and optical change. These results extend our understanding of the biomolecule-directed synthesis of chiral gold nanoparticles to sequence programmable deoxyribonucleic acid and provides a foundation for programmable synthesis of chiral gold nanoparticles. Chiral plasmonic nanoparticles are of great interest in nanotechnology. Here, the authors demonstrate chiral shape guidance by single-stranded oligonucleotides during particle growth based on sequence-specific hydrogen bonding within the strand.

The process of memory and learning in biological systems is multimodal, as several kinds of input signals cooperatively determine the weight of information transfer and storage. This study describes a peptide-based platform of materials and devices that can control the coupled conduction of protons and electrons and thus create distinct regions of synapse-like performance depending on the proton activity. We utilized tyrosine-rich peptide-based films and generalized our principles by demonstrating both memristor and synaptic devices. Interestingly, even memristive behavior can be controlled by both voltage and humidity inputs, learning and forgetting process in the device can be initiated and terminated by protons alone in peptide films. We believe that this work can help to understand the mechanism of biological memory and lay a foundation to realize a brain-like device based on ions and electrons. The structural programmability and functionality of peptide materials can be leverage for various next-generation devices such as non-volatile memories. The authors report a proton-coupled mechanism in tyrosine-rich peptides for realizing multimodal memory devices.

Priest and Klein argued in 1984 that, because of selection effects, the percentage of litigated cases won by plaintiffs will not vary with the legal standard. Many researchers thereafter concluded that one could not make valid inferences about the character of the law from the percentage of cases plaintiffs won, nor could one measure legal change by observing changes in that percentage. This article argues that, even taking selection effects into account, one may be able to make valid inferences from the percentage of plaintiff trial victories, because selection effects are partial. Therefore, although selection mutes changes in the plaintiff trial win rate, it does not make the win rate completely invariant to legal change. This article shows that inferences from litigated cases may be possible under the standard screening and signaling models of settlement, as well as under Priest and Klein’s original divergent-expectations model.