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Recent advances in nanotechnology, including the development of nanoparticles, thin films, and superlattices, have revitalized research in thermoelectricity by enabling independent control of thermal and electrical transport, overcoming longstanding efficiency limitations and expanding opportunities for sustainable energy generation and miniaturized device applications. Tin dioxide (SnO2) has recently attracted increasing attention as a thermoelectric material owing to its properties, such as high-temperature chemical and structural stability, non-toxicity, and the abundance of constituent elements. Current research efforts have been directed toward enhancing its thermoelectric performance through strategies such as elemental doping, nanostructuring, strain engineering, and the development of composite systems. In this study, we investigate the effects of Mg substitutional doping on the thermoelectric characteristics of SnO2. We synthesize undoped and Mg-doped SnO2 nanoparticles (0.05%, 0.10%, and 0.15%) using a straightforward hydrothermal technique. The investigation of the undoped and doped materials revealed that SnO2 possesses a tetragonal rutile-type structure, as determined through structural and morphological examination. The crystalline size of all of the samples decreases as the Mg doping concentration is increased. Hall measurement and Seebeck coefficient measurements have been employed for assessing the thermoelectric characteristics. As the Mg content increased, both the Seebeck coefficient and electrical conductivity value increased from −20 μV/K to −91 μV/K and 29.8 S/cm to 112.6 S/cm, confirming the presence of semiconductor behavior. The 0.15% Mg-doped sample demonstrates the highest power factor when evaluated at a temperature of 150 K, yielding a value of 9.4 × 10−5 WK−2m−1.

Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto—supported by—a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area; hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.

Sn-based halide perovskites are expected to be the best replacement for toxic lead-based counterparts, owing to their similar ionic radii and the optimal band gap for use in solar cells, as well as their versatile use in light-emitting diodes and photodetection applications. Concerns, however, exist about their stability under ambient conditions, an issue that is exacerbated in polycrystalline films because grain boundaries present large concentrations of defects and act as entrance points for oxygen and water, causing Sn oxidation. A current thriving research area in perovskite materials is the fabrication of perovskite single crystals, promising improved optoelectronic properties due to excellent uniformity, reduced defects, and the absence of grain boundaries. This review summarizes the most recent advances in the fabrication of single crystal Sn-based halide perovskites, with emphasis on synthesis methods, compositional engineering, and formation mechanisms, followed by a discussion of various challenges and appropriate strategies for improving their performance in optoelectronic applications.

Iontronics exploits mobile ions within electrolytes to control the electronic properties of materials and devices' electrical and optical response. In this frame, ionic liquids are widely exploited for the gating of semiconducting nanostructure devices, offering superior performance compared to conventional dielectric gating. In this work, we engineer ionic liquid gated InAs nanowire-based field effect transistors and adopt the set-and-freeze dual gate device operation to probe the nanowires in several ionic gate regimes. We exploit standard back-gating at 150 K, when the ionic liquid is frozen and any crosstalk between the ionic gate and the back gate is ruled out. We demonstrate that the liquid gate polarization has a persistent effect on the nanowire properties. This effect can be conveniently exploited to fine-tune the properties of the nanowires and enable new device functionalities. Specifically, we correlate the modification of the ionic environment around the nanowire to the transistor threshold voltage and hysteresis, on/off ratio and current level retention times. Based on this, we demonstrate memory operations of the nanowire field effect transistors. Our work shines a new light on the interaction between electrolytes and semiconducting nanostructures, providing useful insights for future applications of nanodevice iontronics.

The present study investigates the impact of copper doping on the thermoelectric properties of zinc selenide (ZnSe) nanoparticles synthesized by the hydrothermal method. Nanoparticle samples with varying copper concentrations were prepared and their thermoelectric performances were evaluated by measuring the electrical transport properties, the Seebeck coefficient, and extracting the power factor. The results demonstrate that the thermoelectric properties of Cu-doped ZnSe nanoparticles are significantly enhanced by doping, mainly as an effect of an improved electrical conductivity, providing a promising avenue for energy applications of these nanomaterials. To gain further insights into the fundamental mechanisms underlying the observed improvements in thermoelectric performance of the samples, the morphological, structural, and vibrational properties were characterized using a combination of scanning electron microscopy, X-ray diffraction, and Raman spectroscopy.

Thermoelectric polyelectrolytes are emerging as ideal material platform for self‐powered bio‐compatible electronic devices and sensors. However, despite the nanoscale nature of the ionic thermodiffusion processes underlying thermoelectric efficiency boost in polyelectrolytes, to date no evidence for direct probing of ionic diffusion on its relevant length and time scale has been reported. This gap is bridged by developing heat‐driven hybrid nanotransistors based on InAs nanowires embedded in thermally biased Na+‐functionalized (poly)ethyleneoxide, where the semiconducting nanostructure acts as a nanoscale probe sensitive to the local arrangement of the ionic species. The impact of ionic thermoelectric gating on the nanodevice electrical response is addressed, investigating the effect of device architecture, bias configuration and frequency of the heat stimulus, and inferring optimal conditions for the heat‐driven nanotransistor operation. Microscopic quantities of the polyelectrolyte such as the ionic diffusion coefficient are extracted from the analysis of hysteretic behaviors rising in the nanodevices. The reported experimental platform enables simultaneously the ionic thermodiffusion and nanoscale resolution, providing a framework for direct estimation of polyelectrolytes microscopic parameters. This may open new routes for heat‐driven nanoelectronic applications and boost the rational design of next‐generation polymer‐based thermoelectric materials. A novel class of thermally‐driven, hybrid nanotransistors based on InAs nanowires is developed. Semiconductor nanostructure devices are embedded in Na+‐functionalized (poly)ethyleneoxide and allow for extracting the parameters featuring ionic thermodiffusion. Reported results open new perspectives for heat‐driven nanoelectronic applications and boost the rational design of next‐generation polymer‐based thermoelectric materials.

Fe2+-doped ZnSe nanoparticles, with varying concentrations of Fe2+ dopants, were prepared by the hydrothermal method and investigated using a multi-technique approach exploiting scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy, as well as measurement of the electrical transport properties and Seebeck coefficient (S). The doped nanoparticles appeared as variable-sized agglomerates on nanocrystallites upon SEM investigation for any doping level. Combined XRD and Raman analyses revealed the occurrence of a cubic structure in the investigated samples. Electric and thermoelectric (TE) transport investigations showed an increase in TE performance with an increase in Fe atom concentrations, which resulted in an enhancement of the power factors from 13 µWm−1K−2 to 120 µWm−1K−2 at room temperature. The results were also dependent on the operating temperature. The maximum power factor of 9 × 10−3 Wm−1K−2 was achieved at 150 °C for the highest explored doping value. The possible applications of these findings were discussed.

In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.