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result(s) for
"Denlinger, Jonathan D"
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Breakdown of the scaling relation of anomalous Hall effect in Kondo lattice ferromagnet USbTe
by
Wray, L. Andrew
,
Weng, Hongming
,
Liu, Shouzheng
in
639/766/119/2792
,
639/766/119/995
,
639/766/119/997
2023
The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature.
Kondo systems offer a rich platform to study the interplay between strong correlations and topology. Here the authors observe a large anomalous Hall conductivity in a Kondo ferromagnet USbTe, which they attribute to the Berry curvature originating from flat bands induced by the Kondo hybridization.
Journal Article
Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite thin films
by
Ryu, Hanyoung
,
Lee, Eunwoo
,
Kyung, Wonshik
in
639/301/119/2792
,
639/301/119/995
,
Biomaterials
2021
Magnetism and spin–orbit coupling are two quintessential ingredients underlying topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by spin–orbit coupling, the nodal structures become a source of Berry curvature, leading to a large anomalous Hall effect. However, two-dimensional systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that two-dimensional spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the anomalous Hall effect. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO
3
, a representative metallic ferromagnet with spin–orbit coupling. We show that the sign-changing anomalous Hall effect upon variation in the film thickness, magnetization and chemical potential can be well explained by theoretical models. Our work may facilitate new switchable devices based on ferromagnetic ultrathin films.
The topological nature of the electronic structure of two-dimensional ferromagnetic SrRuO
3
and its relationship to the anomalous Hall effect is explored through transport measurements, angle-resolved photoemission spectroscopy and theoretical modelling.
Journal Article
Hallmarks of the Mott-metal crossover in the hole-doped pseudospin-1/2 Mott insulator Sr2IrO4
by
Waugh, Justin A.
,
Zhou, Xiaoqing
,
Rotenberg, Eli
in
140/146
,
639/301/1034/1038
,
639/301/119/995
2016
The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr
2
IrO
4
. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observed in doped cuprates—pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material’s proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.
The physics of Mott insulators is obscured by the interplay between competing orders and fluctuations. Here, the authors track the evolution of the electronic structure of Mott insulator strontium iridate as the iridium atoms are replaced by rhodium, providing insight into this exotic state of matter.
Journal Article
Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
by
Denlinger, Jonathan D.
,
Neupane, Madhab
,
Chou, Fang-Cheng
in
140/146
,
639/301/119
,
639/766/483/640
2014
Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics because of the indirect to direct band gap transition and the emergence of the spin-valley coupling phenomenon upon moving from the bulk to monolayer limit. Here, we report high-resolution angle-resolved photoemission spectroscopy on MoSe
2
single crystals and monolayer films of MoS
2
grown on highly ordered pyrolytic graphite substrate. Our experimental results resolve the Fermi surface trigonal warping of bulk MoSe
2
, and provide evidence for the critically important spin-orbit split valence bands of monolayer MoS
2
. Moreover, we systematically image the formation of quantum well states on the surfaces of these materials, and present a theoretical model to account for these experimental observations. Our findings provide important insights into future applications of transition metal dichalcogenides in nanoelectronics, spintronics and photonics devices as they critically depend on the spin-orbit physics of these materials.
Single layers of atoms can exhibit electronic properties far removed from their three-dimensional counter parts, with much potential for spintronics. Here, the authors provide evidence of spin-orbit splitting and extrinsic quantum well states in MoS2 and MoSe2 by angle-resolved photoemission spectroscopy
Journal Article
Photoelectron spin-flipping and texture manipulation in a topological insulator
by
Louie, Steven G.
,
Denlinger, Jonathan D.
,
Hwang, Choongyu
in
639/766/119/1001
,
639/766/119/995
,
Atomic
2013
In a topological insulator, the surface-state electron spins are ‘locked’ to their direction of travel. But when an electron is kicked out by a photon through the photoelectric effect, the spin polarization is not necessarily conserved. In fact, the ejected spins can be completely manipulated in three dimensions by the incident photons.
Recently discovered materials called three-dimensional topological insulators
1
,
2
,
3
,
4
,
5
constitute examples of symmetry-protected topological states in the absence of applied magnetic fields and cryogenic temperatures. A hallmark characteristic of these non-magnetic bulk insulators is their protected metallic Dirac fermion-like surface states. Electrons in these surface states are spin polarized with their spins governed by their momentum, resulting in a helical spin texture in momentum space
6
. Spin- and angle-resolved photoemission spectroscopy has been the only tool capable of directly observing this central feature with simultaneous energy, momentum and spin sensitivity
6
,
7
,
8
,
9
,
10
,
11
,
12
. By using an innovative photoelectron spectrometer
13
with a high-flux laser-based light source, we discovered a surprising property of these surface electrons. We found that the spin polarization of the resulting photoelectrons can be manipulated in three dimensions through selection of the light polarization. These effects are due to the spin-dependent interaction of the helical surface electrons with light, which originates from strong spin–orbit coupling. Our results illustrate unusual scenarios in which the spin polarization of photoelectrons is completely different from that of the originating initial states. The results also provide the basis for a source of highly spin-polarized electrons with tunable polarization direction.
Journal Article
Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8
by
Zhao, Yuzhou
,
Sakhya, Anup Pradhan
,
Yang, Jihui
in
639/301/119/2792/4128
,
639/766/483/1139
,
Banded structure
2022
Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, niobium halide semiconductors Nb
3
X
8
(
X
= Cl, Br, I) have been predicted to be two-dimensional magnets and these materials are also interesting for their breathing kagome geometry. However, experimental electronic structure studies of these promising materials are still lacking. Here, we report the spectroscopic evidence of flat and weakly dispersing bands in breathing-kagome semiconductor Nb
3
I
8
around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of niobium atoms and have niobium
d
-orbital character. They are found to be sensitive to the polarization of the incident photon beam. Our study provides insight into the electronic structure and flat band topology in an exfoliable kagome semiconductor, thereby providing an important platform to understand the interaction of geometry and electron correlations in two-dimensional materials.
Niobium halide semiconductors are interesting for their breathing kagome geometry, easily exfoliable layered structure, and potential two-dimensional magnetism. Here, experimental evidence of flat bands in Nb
3
I
8
, originating from the niobium breathing kagome lattice, is observed using angle-resolved photoemission spectroscopy and supported by first-principles calculations.
Journal Article
Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface
by
Denlinger, Jonathan D.
,
Lanzara, Alessandra
,
Ahadi, Kaveh
in
639/301/119/544
,
639/766/1130/2798
,
639/766/119/2795
2019
The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level,
E
F
, is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.
A singularity in a material’s density of states at the Fermi energy can drive the formation of unconventional electronic phases. Here the authors show a Van Hove singularity is tunable across the Fermi energy in an oxide heterostructure, leading to enhanced electronic correlations.
Journal Article
Topological Fermi-arc surface state covered by floating electrons on a two-dimensional electride
2024
Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromagnetic electride [Gd
2
C]
2+
·2e
−
. In particular, the presence of Weyl cones and Fermi-arc states is demonstrated through photon energy-dependent ARPES measurements, agreeing with theoretical band structure calculations. Notably, the STM measurements reveal that the Fermi-arc states exist underneath a floating quantum electron liquid on the top Gd layer, forming double-stacked surface states in a heterostructure. Our work thus not only unveils the non-trivial topology of the [Gd
2
C]
2+
·2e
−
electride but also realizes a surface heterostructure that can host phenomena distinct from the bulk.
Electrides are an emerging family of materials with potential for hosting topological states. Here, the authors demonstrate the presence of Fermi-arc surface states in close proximity to the floating electron layer on the surface of an electride.
Journal Article
Anomalous Hall effect from inter-superlattice scattering in a noncollinear antiferromagnet
by
Goodge, Berit H.
,
Gonzalez, Oscar
,
Fender, Shannon S.
in
639/301/119/995
,
639/301/119/997
,
Antiferromagnetism
2025
Superlattice formation dictates the physical properties of many materials, including the nature of the ground state in magnetic materials. Chemical composition is commonly considered to be the primary determinant of superlattice identity, especially in intercalation compounds. Nevertheless, in this work, we find that kinetic control of superlattice growth leads to the coexistence of disparate crystallographic domains within a compositionally perfect single crystal. We demonstrate that Cr
1/4
TaS
2
is a noncollinear antiferromagnet in which scattering between majority and minority superlattice domains engenders complex magnetotransport below the Néel temperature, including an anomalous Hall effect. We characterize the magnetic phases in different domains, image their nanoscale morphology, and propose a mechanism for nucleation and growth using a suite of experimental probes coupled with first-principles calculations and symmetry analysis. These results provide a blueprint for the deliberate engineering of macroscopic transport responses via microscopic tuning of magnetic exchange interactions in superlattice domains.
Superlattices, with a length scale and structure that differs from the parent lattice of the host material, are well-known to allow for remarkable new electronic and magnetic properties. Here, Xie et al. synthesize Cr
1/4
TaS
2
, and find that it exhibits an unusual anomalous Hall effect below the Néel temperature even in stoichiometric high-quality crystals.
Journal Article
Kramers nodal lines and Weyl fermions in SmAlSi
by
Hashimoto, Makoto
,
Yi, Ming
,
Birgeneau, Robert J.
in
639/766/119/2792
,
639/766/119/995
,
Crystal structure
2023
Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been experimentally established. Here we gather the experimental evidence pointing at the presence of KNLs in SmAlSi, a non-centrosymmetric metal that develops incommensurate spin density wave order at low temperature. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and magneto-transport methods, we provide evidence suggesting the presence of KNLs, together with observing Weyl fermions under the broken inversion symmetry in the paramagnetic phase of SmAlSi. We discuss the nesting possibilities regarding the emergent magnetic orders in SmAlSi. Our results provide a solid basis of experimental observations for exploring correlated topology in SmAlSi
Kramers Nodal Lines (KNLs) have been theoretically proposed as special Weyl line degeneracies connecting time-reversal invariant momenta, but their observation in quantum materials is not established. Combining ARPES experiments with DFT calculations, the authors identify SmAlSi and its isostructural family as viable materials to host KNLs.
Journal Article