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Motile plant structures such as Mimosa pudica leaves, Impatiens glandulifera seedpods, and Dionaea muscipula leaves exhibit fast nastic movements in a few seconds or less. This motion is stimuli-independent mechanical movement following theorema egregium rules. Artificial analogs of tropistic motion in plants are exemplified by shape-morphing systems, which are characterized by high functional robustness and resilience for creating 3D structures. However, all shape-morphing systems developed so far rely exclusively on continuous external stimuli and result in slow response. Here, we report a Gaussian-preserved shape-morphing system to realize ultrafast shape morphing and non-volatile reconfiguration. Relying on the Gaussian-preserved rules, the transformation can be triggered by mechanical or thermal stimuli within a microsecond. Moreover, as localized energy minima are encountered during shape morphing, non-volatile configuration is preserved by geometrically enhanced rigidity. Using this system, we demonstrate a suite of electronic devices that are reconfigurable, and therefore, expand functional diversification. Designing the functional diversification of electronic devices with morphable 3D structures in multistable states remains a challenge. Here, the authors present a Gaussian-preserved shape-morphing system to realize ultrafast shape morphing and non-volatile reconfiguration developing dual-functional electronic devices, such as switch, actuator, and antenna on microscale.

Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS 2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS 2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials. Here, the authors demonstrate the application of machine learning to optimize the device fabrication process for wafer-scale 2D semiconductors, and eventually fabricate digital, analog, and optoelectrical circuits.

Thermochromic window develops as a competitive solution for carbon emissions due to comprehensive advantages of its passivity and effective utilization of energy. How to further enhance the solar modulation ( △ T sol ) of thermochromic windows while ensuring high luminous transmittance ( T lum ) becomes the latest challenge to touch the limit of energy efficiency. Here, we show a smart window combining mechanochromism with thermochromism by self-rolling of vanadium dioxide (VO 2 ) nanomembranes to enhance multi-level solar modulation. The mechanochromism is introduced by the temperature-controlled regulation of curvature of rolled-up smart window, which benefits from effective strain adjustment in VO 2 nanomembranes upon the phase transition. Under geometry design and optimization, the rolled-up smart window with high △ T sol and T lum is achieved for the modulation of indoor temperature self-adapted to seasons and climate. Furthermore, such rolled-up smart window enables high infrared reflectance after triggered phase transition and acts as a smart lens protective cover for strong radiation. This work supports the feasibility of self-rolling technology in smart windows and lens protection, which promises broad interest and practical applications of self-adapting devices and systems for smart building, intelligent sensors and actuators with the perspective of energy efficiency. In this work, authors demonstrate a smart window combining mechanochromism with thermochromism by self-rolling of VO 2 nanomembranes to modulate in-door temperature self-adapted to seasons and climate with high efficiency.

Graphene nanobubbles (GNBs) have attracted much attention due to the ability to generate large pseudo-magnetic fields unattainable by ordinary laboratory magnets. However, GNBs are always randomly produced by the reported protocols, therefore, their size and location are difficult to manipulate, which restricts their potential applications. Here, using the functional atomic force microscopy (AFM), we demonstrate the ability to form programmable GNBs. The precision of AFM facilitates the location definition of GNBs, and their size and shape are tuned by the stimulus bias of AFM tip. With tuning the tip voltage, the bubble contour can gradually transit from parabolic to Gaussian profile. Moreover, the unique three-fold symmetric pseudo-magnetic field pattern with monotonous regularity, which is only theoretically predicted previously, is directly observed in the GNB with an approximately parabolic profile. Our study may provide an opportunity to study high magnetic field regimes with the designed periodicity in two dimensional materials. Presence of nano-bubbles within an atomically thin material generates potentially large pseudo-magnetic fields. Here, the authors report an innovative technique to induce nano-bubbles in graphene with desirable features and high precision through energized AFM tips, and experimentally measure three-fold symmetric pseudo-magnetic fields up to 120 T.

Metal–semiconductor junctions are essential components in electronic and optoelectronic devices. With two-dimensional semiconductors, conventional metal deposition via ion bombardment results in chemical disorder and Fermi-level pinning. Transfer printing techniques—in which metal electrodes are predeposited and transferred to create van der Waals junctions—have thus been developed, but the predeposition of metal electrodes creates chemical bonds on the substrate, which makes subsequent transfer difficult. Here we report a graphene-assisted metal transfer printing process that can be used to form van der Waals contacts between two-dimensional materials and three-dimensional metal electrodes. We show that arrays of metal electrodes with both weak (copper, silver and gold) and strong (platinum, titanium and nickel) adhesion strengths can be delaminated from a four-inch graphene wafer due to its weak van der Waals force and absence of dangling bonds, and transfer printed onto different substrates (graphene, molybdenum disulfide and silicon dioxide). We use this approach to create molybdenum disulfide field-effect transistors with different printed metal electrodes, allowing the Schottky barrier height to be tuned and ohmic and Schottky contacts to be formed. We also demonstrate the batch production of molybdenum disulfide transistor arrays with uniform electrical characteristics. A variety of metal electrodes can be deposited on a graphene substrate, delaminated and transferred onto two-dimensional semiconductors to form high-quality metal–semiconductor interfaces.

Two-dimensional (2D) materials possess outstanding lubrication property with their thicknesses down to a few atomic layers, but they are easily susceptible to sliding induced degradation or ubiquitous chemical modification. Maintaining the superior lubricating performance of 2D materials in a harsh working environment is highly desirable yet grandly challenging. Here we show that by proper alignment of graphene on a Ge(111) substrate, friction of graphene could be well preserved at an ultra-low level even after fluorination or oxidation. This behaviour is experimentally found to be closely related to the suppression of molecular-level deformation of graphene within the moiré superlattice structure. Atomistic simulations reveal that the formation of an interconnected meshwork with enhanced interfacial charge density imposes a strong anchoring effect on graphene even under chemical modification. Modulating molecular-level deformation by interfacial confinements may offer a unique strategy for tuning the mechanical or even chemical properties of 2D materials. Two-dimensional materials show remarkable lubrication properties, yet chemical modifications may hinder such capabilities. Here, the authors show that when graphene is aligned on a Ge(111) substrate, ultra-low friction can be preserved even after graphene fluorination or oxidation.

Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p–n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p–n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p–n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics. Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.

Three-dimensional microstructures fabricated by origami, including folding, rolling and buckling, gain great interests in mechanics, optics and electronics. We propose a general strategy on on-demand and spontaneous rolling origami for artificial microstructures aiming at massive and intelligent production. Deposited nanomembranes are rolled-up in great amount triggered by the intercalation of tiny droplet, taking advantage of a creative design of van der Waals interaction with substrate. The rolling of nanomembranes delaminated by liquid permits a wide choice in materials as well as precise manipulation in rolling direction by controlling the motion of microdroplet, resulting in intelligent construction of rolling microstructures with designable geometries. Moreover, this liquid-triggered delamination phenomenon and constructed microstructures are demonstrated in the applications among vapor sensing, microresonators, micromotors, and microactuators. This investigation offers a simple, massive, low-cost, versatile and designable construction of rolling microstructures for fundamental research and practical applications. Rolling microstructures have great potential among optics and micromechanics but on-demand construction with versatile materials remains challenging. Here Xu et al. precisely construct 3D rolling microstructures by liquid-triggered delamination in predictable manner and demonstrate their applications.

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO 3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO 3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO 3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO 3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO 3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides. The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO 3-δ membrane with enhanced flexoelectricity on Ge (011).

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).