Explore the vast range of titles available.

Piezoelectric actuators transform electrical energy into mechanical energy, and because of their compactness, quick response time and accurate displacement, they are sought after in many applications. Polycrystalline piezoelectric ceramics are technologically more appealing than single crystals due to their simpler and less expensive processing, but have yet to display electrostrain values that exceed 1%. Here we report a material design strategy wherein the efficient switching of ferroelectric–ferroelastic domains by an electric field is exploited to achieve a high electrostrain value of 1.3% in a pseudo-ternary ferroelectric alloy system, BiFeO3–PbTiO3–LaFeO3. Detailed structural investigations reveal that this electrostrain is associated with a combination of several factors: a large spontaneous lattice strain of the piezoelectric phase, domain miniaturization, a low-symmetry ferroelectric phase and a very large reverse switching of the non-180° domains. This insight for the design of a new class of polycrystalline piezoceramics with high electrostrains may be useful to develop alternatives to costly single-crystal actuators.

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed. We report the epitaxial growth of Hf0.5Zr0.5O2 thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 substrates. The films, which are under epitaxial compressive strain and predominantly (111)-oriented, display large ferroelectric polarization values up to 34 μC cm−2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This finding, in conjunction with density functional theory calculations, allows us to propose a compelling model for the formation of the ferroelectric phase. In addition, these results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

Many material properties such as superconductivity, magnetoresistance or magnetoelectricity emerge from the non-linear interactions of spins and lattice/phonons. Hence, an in-depth understanding of spin–phonon coupling is at the heart of these properties. While most examples deal with one magnetic lattice only, the simultaneous presence of multiple magnetic orderings yield potentially unknown properties. We demonstrate a strong spin–phonon coupling in SmFeO 3 that emerges from the interaction of both, iron and samarium spins. We probe this coupling as a remarkably large shift of phonon frequencies and the appearance of new phonons. The spin–phonon coupling is absent for the magnetic ordering of iron alone but emerges with the additional ordering of the samarium spins. Intriguingly, this ordering is not spontaneous but induced by the iron magnetism. Our findings show an emergent phenomenon from the non-linear interaction by multiple orders, which do not need to occur spontaneously. This allows for a conceptually different approach in the search for yet unknown properties. Typically, magnetic phenomena result from the spontaneous order of the sublattices. Here, the cross-talk of two magnetic ions gives rise to an intrinsic, yet non-spontaneous ordering and manifests as emergent strong spin–phonon coupling in SmFeO 3 .

Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 10 10 cycles, an ON/OFF ratio of ~10 2 , a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 10 4 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing. Designing efficient high-density crossbar arrays are nowadays highly demanded for many artificial intelligence applications. Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes with high performance and easy fabrication process

Giant magnetocaloric materials are promising for solid-state refrigeration, as an alternative to hazardous gases used in conventional cooling devices. A giant magnetocaloric effect was discovered near room temperature in near-equiatomic FeRh alloys some years before the benchmark study in Gd 5 Si 2 Ge 2 that launched the field. However, FeRh has attracted significantly less interest in cooling applications mainly due to irreversibility in magnetocaloric cycles associated with the large hysteresis of its first-order metamagnetic phase transition. Here we overcome the irreversibility via a dual-stimulus magnetic-electric refrigeration cycle in FeRh thin films via coupling to a ferroelectric BaTiO 3 substrate. This experimental realization of a multicaloric cycle yields larger reversible caloric effects than either stimulus alone. While magnetic hysteretic losses appear to be reduced by 96% in dual-stimulus loops, we show that the losses are simply transferred into an elastic cycle, contrary to common belief. Nevertheless, we show that these losses do not necessarily prohibit integration of FeRh in practical refrigeration systems. Our demonstration of a multicaloric refrigeration cycle suggests numerous designs for efficient solid-state cooling applications. Refrigeration devices based on giant magnetocaloric materials are hampered by an irreversible caloric effect associated with large magnetic hysteresis. Here, Liu et al . report a multicaloric refrigeration cycle in FeRh thin films coupled to a ferroelectric BaTiO 3 substrate, demonstrating reversibility and conversion of hysteretic losses.

Generation of strain using light is a key issue for future development of ultrasonic devices. Up to now, photo-induced GHz–THz acoustic phonons have been mainly explored in metals and semiconductors, and in artificial nanostructures to enhance their phononic emission. However, despite their inherent strong polarization (providing natural asymmetry) and superior piezoelectric properties, ferroelectric oxides have been only poorly regarded. Here, by using ultrafast optical pump–probe measurements, we show that photogeneration/photodetection of coherent phonons in BiFeO 3 ferroelectric leads, at room temperature, to the largest intensity ratio ever reported of GHz transverse acoustic wave versus the longitudinal one. It is found that the major mechanism involved corresponds to screening of the internal electric fields by light-induced charges, which in turn induces stress by inverse piezoelectric effect. This giant opto-acoustic response opens new perspectives for the use of ferroelectric oxides in ultrahigh frequency acoustic devices and the development of new GHz–THz acoustic sources. The generation of strain in a material using light is of relevance for ultrasonic devices. Here, the authors observe a large, ultrafast photo-induced shear strain in BiFeO 3 at room temperature, suggesting promising uses of such oxides for high-frequency acoustic devices.

Differential calculus is the cornerstone of many disciplines, spanning the breadth of modern mathematics, physics, computer science, and engineering. Its applications are fundamental to theoretical progress and practical solutions. However, the current state of digital differential technology often requires complex implementations, which struggle to meet the extensive demands of the ubiquitous edge computing in the intelligence age. To face these challenges, we propose an in-memory differential computation that capitalizes on the dynamic behavior of ferroelectric domain reversal to efficiently extract information differences. This strategy produces differential information directly within the memory itself, which considerably reduces the volume of data transmission and operational energy consumption. We successfully illustrate the effectiveness of this technique in a variety of tasks, including derivative function solving, the moving object extraction and image discrepancy identification, using an in-memory differentiator constructed with a crossbar array of 1600-unit ferroelectric polymer capacitors. Our research offers an efficient hardware analogue differential computing, which is crucial for accelerating mathematical processing and real-time visual feedback systems. Here, authors develop an in-memory differentiator using a 40×40 array of ferroelectric capacitors. This device efficiently performs real-time differential computation and motion extraction, demonstrating low energy consumption and high operational frequency, with potential applications in edge computing.

In the present work, pure BiFeO 3 and pure Bi 2 Fe 4 O 9 single phases were successfully synthesized by tailoring hydrothermal synthesis route. The structural and morphology analyses have been achieved by X-ray diffraction and by electron microscopy. Scanning and transmission electron microscopy images revealed a strong change in the morphology from agglomerated nanoparticles with sizes less than 10 nm for BiFeO 3 to plate-like particles with larger sizes (edges of 100 to 200 nm while a thickness of ~ 30 nm) for Bi 2 Fe 4 O 9 . Such a small size obtained for BFO nanoparticles has never been observed before for similar synthesis method without any added reagents, to the best of our knowledge. The photocatalytic activity of the as-prepared samples for degradation of methylene blue dye under sunlight irradiation shows a good efficiency. It reaches 61% and 83% after 3 h for BiFeO 3 and Bi 2 Fe 4 O 9 nanostructures, respectively. Despite a bigger size and higher bandgap, the better efficiency of Bi 2 Fe 4 O 9 compared to BiFeO 3 is explained by a much stronger absorption especially for light with energy higher than 2.65 eV.

As promising candidates for next-generation energy storage devices in electrical and electronic systems, lead-free multilayer ceramic capacitors face increasingly high performance requirements. To counteract the usual trade-off between energy storage density and efficiency, we here propose a high-entropy design that directly harnesses diverse oxide symmetries to targetedly engineer competing orders and tune the composition into the crossover region between relaxor ferroelectric and superparaelectric states. Atomic-scale structural analysis reveals high-entropy ceramic develops pronounced local polarization fluctuation and dispersed oxygen octahedral rotations, which enhance relaxor behavior and reduce switching barrier. Consequently, superior recoverable energy density of 20.64 J cm -3 and high efficiency of 94.2% are obtained in our designed high-entropy Bi 0.5 Na 0.5 TiO 3 -based multilayer ceramic capacitors, along with excellent thermal/anti-fatigue stability and charge-discharge capabilities. This work provides a transferable strategy to engineer competing orders in lead-free dielectric materials and successfully achieves high-entropy multilayer ceramic capacitors with superior energy storage performance. Authors design lead-free high-entropy multilayer ceramic capacitors where entropy tunes competing polar orders, enabling high energy density and efficiency with fast discharge and robust thermal and cycling stability.

The nature of lead zirconate, the historical antiferroelectric material, has recently been challenged. In PbZrO 3 epitaxial films, thickness reduction engenders competition among antiferroelectric, ferrielectric and ferroelectric phases. All studies so far on PbZrO 3 films have utilized commercially-available oxide single crystals with large compressive lattice mismatch, causing the films to undergo strain relaxation. First-principles calculations have predicted that tensile strain can stabilize antiferroelectricity down to the nanometre scale. Here we use tensile strain imposed by artificial substrates of LaLuO 3 to stabilize a pure antiferroelectric phase in PbZrO 3 . Sharp double hysteresis loops of polarization vs electric field show zero remanent polarization, and polar displacement maps reveal the characteristic up-up-down-down antipolar pattern down to 9 nanometre film thicknesses. Moreover, the electron beam can move this antipolar pattern through the nucleation and annihilation of translational boundaries. These results highlight the critical role of coherent epitaxial strain in the phase stability of PbZrO 3 . Here the authors use tensile strain imposed by artificial substrates of LaLuO3 to stabilize a pure antiferroelectric phase in epitaxial thin films of PbZrO3.