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"Do, Manh Anh"
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A SPICE COMPATIBLE MODEL OF ON-WAFER COUPLED INTERCONNECTS FOR CMOS RFICs
This paper investigates the properties of the on-wafer coupled interconnects built in a 0.18 μm CMOS technology for RF applications. A SPICE compatible equivalent circuit model is developed. The proposed model is an extension of a 2-Ⅱ equivalent circuit model for single-line interconnects by adding two coupling components. The model parameters are extracted from four-port S-parameter simulation results through a calibrated electromagnetic (EM) simulator, i.e. HFSS. The accuracy of the model is validated from 500 MHz to 20 GHz.
Journal Article
Ultra-low-voltage bootstrapped CMOS driver for high performance applications
A driver circuit designed for high-performance and low-power consumption applications is described. It is based on an efficient bootstrapping technique and can be fabricated using a standard CMOS process. Comparative evaluations have shown its superiority over a two-stage CMOS driver and two recently reported circuits in terms of speed and power for different supply voltages and output capacitances.
Journal Article
Ultra-low-voltage bootstrapped CMOS driver for high performance applications
A driver circuit designed for high-performance and low-power consumption applications is described. It is based on an efficient bootstrapping technique and can be fabricated using a standard CMOS process. Comparative evaluations have shown its superiority over a two-stage CMOS driver and two recently reported circuits in terms of speed and power for different supply voltages and output capacitances.
Journal Article
Physically-based RF model for metal-oxide-metal capacitors
A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.
Journal Article
A Low-Power Multi-Channel UWB Single Chip Transceiver with Pulse Detectors
Impulse radio ultra-wideband communication (IR- UWB), using impulse signals that have an ultra wide bandwidth, is a specific form of UWB where the data bits modulate the short pulses in the time domain. An IR-UWB transmitter must comply with Federal Communications Commission (FCC) regulations.1 To avoid interference with the wireless local area network (WLAN) band at 5 GHz, the UWB transmitters often operate in either the 3 to 5 GHz band or the 6 to 10 GHz band.
Journal Article
Physically-based RF model for metal-oxide-metal capacitors
A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.
Journal Article
An Input Matching Network Without Gain Trade-Off for a CMOS LNA
A micrograph of the LNA's chip is shown in Figure 5. The total area including the output buffer and pads is 0.74 X 0.84 mm. Figure 6 shows the voltage gains, Sn and S22, of the proposed LNA. An LCSLNA, with the same power consumption level and output load condition than the proposed LNA, was also fabricated. The LNA's voltage gain at 2.4 GHz is 21.5 dB, while the L-CSLNA's voltage gain is 18.8 dB. The measured gain of the LNA is 2.7 dB higher than that of the L-CSLNA.
Journal Article