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The rapidly evolving opto-electronic field demands photo-detectors that are fast, energy efficient and low cost. These challenges lead researcher to exploration of novel materials. Among the IV-VI compound semiconductor, In0.02Sn0.73Se0.25 is a 2D layered material that promises high optoelectronic properties and has many applications in optoelectronics and photonics. In this work, we report the fabrication and characterization of a photodetector based on In0.02Sn0.73Se0.25 ternary crystals, grown via the direct vapor transport technique. The device demonstrates better response speed, with rise and decay times as fast as 12 ms, positioning it among the quickest photodetectors reported. With a responsivity of 11.81 μAW−1 and detectivity of 1.84 × 107 Jones at a wavelength of 450 nm under an applied power density of 100 mWcm−2, the rapid response time highlights the potential of In0.02Sn0.73Se0.25 based devices for high-speed optoelectronic applications. The photodetector’s performance was further analysed under varying wavelengths, applied biases, and incident power intensities. Structural analysis through X-ray diffraction (XRD) confirmed the crystalline quality of the In0.02Sn0.73Se0.25 materials, underscoring the potential of these ternary crystals in the development of next-generation optoelectronic devices.