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Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids, electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However, in the hydrodynamic regime, Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous “electron fluid.” The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it affects the resistance only through interactions with the sample boundaries, whose roughness not only is unknown but also varies from device to device. Here, we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive in both molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the random phase approximation.

Self-assembled quantum dots comprise a versatile system with which to study quantum effects in the solid state. Many devices have been developed that demonstrate controlled charging of a quantum dot 1 , Rabi oscillations 2 , coherent spin control 3 and electrically injected non-classical photon emission 4 . Often referred to as ‘artificial atoms’, quantum dots have discrete energy levels, making them a viable candidate for encoding qubits. However, unlike single atoms, no two quantum dots are alike. This is a complication for quantum-information applications that require qubits initialized in the same state and interactions between remote systems mediated by indistinguishable photons. We report that truly remote, independent, quantum dots can be tuned to the same energy using large applied electric fields. This allows two-photon interference 5 of their emission under coincidence gating and opens up the possibility of transferring quantum information between remote solid-state sources. Truly remote, independent InGaAs quantum dots are tuned to the same energy using large applied electric fields of up to −500 kV cm −1 . This allows for two-photon interference of their emission under coincidence gating, and opens up the possibility of transferring quantum information between remote solid-state sources.

The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre-coupled quantum transfer. In this work, using only regular lithography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven generation of single photons from single electrons, without the need for a self-assembled quantum dot. In this device, a single electron is carried in a potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single optical photon within 100 ps. This SAW-driven electroluminescence, without optimisation, yields photon antibunching with g (2) (0) = 0.39 ± 0.05 in the single-electron limit ( g (2) (0) = 0.63 ± 0.03 in the raw histogram). Our work marks the first step towards electron-to-photon (spin-to-polarisation) qubit conversion for scaleable quantum computing architectures. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre coupled quantum transfer. Here, the authors demonstrate acoustically-driven single photons from single electrons, without the need for self-assembled quantum dots, using a SAW-driven lateral n-i-p junction.

Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of cooling such electrons to below 1 mK, potentially important for identification of topological phases and spin correlated states. The 2DEG device was immersed in liquid 3 He, cooled by the nuclear adiabatic demagnetization of copper. The temperature of the 2D electrons was inferred from the electronic noise in a gold wire, connected to the 2DEG by a metallic ohmic contact. With effective screening and filtering, we demonstrate a temperature of 0.9 ± 0.1 mK, with scope for significant further improvement. This platform is a key technological step, paving the way to observing new quantum phenomena, and developing new generations of nanoelectronic devices exploiting correlated electron states. Cooling electrons into the microkelvin temperature range is of interest both for practical purposes and fundamental studies, but current demonstrations are limited to small, specific devices. Here, the authors achieve sub-millikelvin temperatures in a large-area, two-dimensional electron gas.

Luttinger liquids occupy a notable place in physics as one of the most understood classes of quantum many-body systems. The experimental mission of measuring its main prediction, power laws in observable quantities, has already produced a body of exponents in different semiconductor and metallic structures. Here, we combine tunneling spectroscopy with density-dependent transport measurements in the same quantum wires over more than two orders of magnitude in temperature to very low electron temperatures down to ∼40 mK. This reveals that, when the second 1D subband becomes populated, the temperature dependence splits into two ranges with different exponents in the power-law dependence of the conductance, both dominated by the finite-size effect of the end-tunneling process. This result demonstrates the importance of measuring the Luttinger parameters as well as the number of modes independently through spectroscopy in addition to the transport exponent in the characterization of Luttinger liquids. This opens a pathway to unambiguous interpretation of the exponents observed in quantum wires. Measuring the bulk power laws of Luttinger liquids in semiconductors remains challenging. Here, the authors demonstrate the dominance of the end-tunneling effect in two fairly distinct Luttinger liquids coexisting in a single quantum wire.

The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural and PL properties have been probed from two different epitaxial layers, namely top-capped and buried layers respectively. Here, we report for the first time both structural and PL measurements from an uncapped layer of InGaAs QDs to correlate directly composition, strain and shape of QDs with the optical properties. Synchrotron X-ray scattering measurements show migration of In atom from the apex of QDs giving systematic reduction of height and enlargement of QDs base in the capping process. The optical transitions show systematic reduction in the energy of ground state and the first excited state transition lines with increase in capping but the energy of the second excited state line remain unchanged. We also found that the excitons are confined at the base region of these elliptically shaped QDs showing an interesting volume-dependent confinement energy scaling of 0.3 instead of 0.67 expected for spherical dots. The presented method will help us tuning the growth of QDs to achieve desired optical properties.

We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B ⊥ ), electrons are focused from the injector to detector leading to focusing peaks periodic in B ⊥ . We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the injector. The temperature dependence reveals that the peak splitting is well defined at low temperature whereas it smears out at high temperature indicating the exchange-driven spin polarisation in the injector is dominant at low temperatures.

The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias- and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET.

When particles with integer spin accumulate at low temperature and high density, they undergo Bose–Einstein condensation (BEC). Atoms, magnons, solid-state excitons, surface plasmon polaritons and excitons coupled to light exhibit BEC, which results in high coherence due to massive occupation of the respective system’s ground state. Surprisingly, photons were shown to exhibit BEC recently in organic-dye-filled optical microcavities, which—owing to the photon’s low mass—occurs at room temperature. Here we demonstrate that photons within an inorganic semiconductor microcavity also thermalize and undergo BEC. Although semiconductor lasers are understood to operate out of thermal equilibrium, we identify a region of good thermalization in our system where we can clearly distinguish laser action from BEC. Semiconductor microcavities are a robust system for exploring the physics and applications of quantum statistical photon condensates. In practical terms, photon BECs offer their critical behaviour at lower thresholds than lasers. Our study shows two further advantages: the lack of dark electronic states in inorganic semiconductors allows these BECs to be sustained continuously; and quantum wells offer stronger photon–photon scattering. We measure an unoptimized interaction parameter ( g ̃  ≳ 10 –3 ), which is large enough to access the rich physics of interactions within BECs, such as superfluid light. Photon Bose–Einstein condensation is observed in a semiconductor laser, where thermalization and condensation of photons occur using an InGaAs quantum well and an open microcavity. The distinction between regimes of photon Bose–Einstein condensation and conventional lasing are clearly identified.

We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate the characteristic of an asymmetrically gate biased quantum point contact with the assistance of a focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.