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Advances in the understanding of Raman processes in graphene have made it an essential tool for studying the properties of this one-atom-thick carbon material. Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp 2 -bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

A bstract The twisted index of 3d N = 2 gauge theories on S 1 × Σ has an algebro-geometric interpretation as the Witten index of an effective supersymmetric quantum mechanics. In this paper, we consider the contributions to the supersymmetric quantum mechanics from topological saddle points in supersymmetric localisation of abelian gauge theories. Topological saddles are configurations where the matter fields vanish and the gauge symmetry is unbroken, which exist for non-vanishing effective Chern-Simons levels. We compute the contributions to the twisted index from both topological and vortex-like saddles points and show that their combination recovers the Jeffrey-Kirwan residue prescription for the twisted index and its wall-crossing.

Graphene and related two-dimensional crystals and hybrid systems showcase several key properties that can address emerging energy needs, in particular for the ever growing market of portable and wearable energy conversion and storage devices. Graphene’s flexibility, large surface area, and chemical stability, combined with its excellent electrical and thermal conductivity, make it promising as a catalyst in fuel and dye-sensitized solar cells. Chemically functionalized graphene can also improve storage and diffusion of ionic species and electric charge in batteries and supercapacitors. Two-dimensional crystals provide optoelectronic and photocatalytic properties complementing those of graphene, enabling the realization of ultrathin-film photovoltaic devices or systems for hydrogen production. Here, we review the use of graphene and related materials for energy conversion and storage, outlining the roadmap for future applications. Methods for storing and converting energy, including fuel cells, solar cells, and water splitting, often benefit from having materials with a large surface area. When combined with a high surface reactivity, high conductivity, or useful optical properties, two-dimensional layered materials become of notable interest for a range of applications. Bonaccorso et al. review the progress that has been made using graphene and other layered or two-dimensional materials at laboratory scales and the challenges in producing these materials in industrially relevant quantities. Science , this issue 10.1126/science.1246501

Quantum light emitters have been observed in atomically thin layers of transition metal dichalcogenides. However, they are found at random locations within the host material and usually in low densities, hindering experiments aiming to investigate this new class of emitters. Here, we create deterministic arrays of hundreds of quantum emitters in tungsten diselenide and tungsten disulphide monolayers, emitting across a range of wavelengths in the visible spectrum (610–680 nm and 740–820 nm), with a greater spectral stability than their randomly occurring counterparts. This is achieved by depositing monolayers onto silica substrates nanopatterned with arrays of 150-nm-diameter pillars ranging from 60 to 190 nm in height. The nanopillars create localized deformations in the material resulting in the quantum confinement of excitons. Our method may enable the placement of emitters in photonic structures such as optical waveguides in a scalable way, where precise and accurate positioning is paramount. Quantum emitters have been recently isolated in 2D materials, yet their spatial controllability remains an open challenge. Here, the authors devise a method to create arrays of quantum emitters in WSe 2 and WS 2 , by taking advantage of the strain distribution induced by a nanopatterned silica substrate.

Optical harmonic generation occurs when high intensity light (>1010 W m–2) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong light–matter interaction and electrically and broadband tunable third-order nonlinear susceptibility. Here, we show that the third-harmonic generation efficiency in graphene can be increased by almost two orders of magnitude by controlling the Fermi energy and the incident photon energy. This enhancement is due to logarithmic resonances in the imaginary part of the nonlinear conductivity arising from resonant multiphoton transitions. Thanks to the linear dispersion of the massless Dirac fermions, gate controllable third-harmonic enhancement can be achieved over an ultrabroad bandwidth, paving the way for electrically tunable broadband frequency converters for applications in optical communications and signal processing.

The generation of stable trains of ultrashort (femtosecond to picosecond), terahertz-frequency radiation pulses with large instantaneous intensities is an underlying requirement for the investigation of light–matter interactions for metrology and ultrahigh-speed communications. In solid-state electrically pumped lasers, the primary route to generate short pulses is through passive mode-locking; however, this has not yet been achieved in the terahertz range, defining one of the longest standing goals over the past two decades. In fact, the realization of passive mode-locking has long been assumed to be inherently hindered by the fast recovery times associated with the intersubband gain of terahertz lasers. Here we demonstrate a self-starting miniaturized short pulse terahertz laser, exploiting an original device architecture that includes the surface patterning of multilayer-graphene saturable absorbers distributed along the entire cavity of a double-metal semiconductor 2.30–3.55 THz wire laser. Self-starting pulsed emission with 4.0-ps-long pulses is demonstrated in a compact, all-electronic, all-passive and inexpensive configuration.A passively mode-locked quantum cascade laser (QCL) is developed by employing a heterogeneous gain medium and integrating graphene saturable absorbers along the entire QCL waveguide. Self-starting optical pulses of 4.0 ps are electrically generated in the 2.30–3.55 THz frequency range.

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices. Atomically thin transition metal dichalcogenides hold promise as scalable single-photon sources. Here, the authors demonstrate all-electrical, single-photon generation in tungsten disulphide and diselenide, achieving charge injection into the layers, containing quantum emitters.

Harmonic generation is a result of a strong non-linear interaction between light and matter. It is a key technology for optics, as it allows the conversion of optical signals to higher frequencies. Owing to its intrinsically large and electrically tunable non-linear optical response, graphene has been used for high harmonic generation but, until now, only at frequencies < 2 THz, and with high-power ultrafast table-top lasers or accelerator-based structures. Here, we demonstrate third harmonic generation at 9.63 THz by optically pumping single-layer graphene, coupled to a circular split ring resonator (CSRR) array, with a 3.21 THz frequency quantum cascade laser (QCL). Combined with the high graphene nonlinearity, the mode confinement provided by the optically-pumped CSRR enhances the pump power density as well as that at the third harmonic, permitting harmonic generation. This approach enables potential access to a frequency range (6-12 THz) where compact sources remain difficult to obtain, owing to the Reststrahlenband of typical III-V semiconductors. Compact sources in the frequency range of 6-12 THz are difficult to obtain due to optical phonon absorption in conventional III-V semiconductors. Here, the authors demonstrate third harmonic generation at 9.63 THz by optically pumping monolayer graphene coupled to a circular split ring resonator by using a semiconductor laser.

Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light–matter interfaces. This Review highlights the role of transition metal dichalcogenides, hexagonal boron nitride and stacked heterostructures in applications in quantum communication, computation, sensing and single-photon detection.

This Review discusses the state-of-the-art in optical trapping at the nanoscale, with an emphasis on some of the most promising advances such as controlled manipulation and assembly of individual and multiple nanostructures, force measurement with femtonewton resolution, and biosensors. Optical trapping and manipulation of micrometre-sized particles was first reported in 1970. Since then, it has been successfully implemented in two size ranges: the subnanometre scale, where light–matter mechanical coupling enables cooling of atoms, ions and molecules, and the micrometre scale, where the momentum transfer resulting from light scattering allows manipulation of microscopic objects such as cells. But it has been difficult to apply these techniques to the intermediate — nanoscale — range that includes structures such as quantum dots, nanowires, nanotubes, graphene and two-dimensional crystals, all of crucial importance for nanomaterials-based applications. Recently, however, several new approaches have been developed and demonstrated for trapping plasmonic nanoparticles, semiconductor nanowires and carbon nanostructures. Here we review the state-of-the-art in optical trapping at the nanoscale, with an emphasis on some of the most promising advances, such as controlled manipulation and assembly of individual and multiple nanostructures, force measurement with femtonewton resolution, and biosensors.