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Photonic integrated circuits (PICs) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing and cryogenic computing technologies 1 , 2 . Silicon PICs have matured for room-temperature applications, but their cryogenic performance is limited by the absence of efficient low-temperature electro-optic modulation. Here we demonstrate electro-optic switching and modulation from room temperature down to 4 K by using the Pockels effect in integrated barium titanate (BaTiO 3 ) devices 3 . We investigate the temperature dependence of the nonlinear optical properties of BaTiO 3 , showing an effective Pockels coefficient of 200 pm V −1 at 4 K. The fabricated devices show an electro-optic bandwidth of 30 GHz, ultralow-power tuning that is 10 9 times more efficient than thermal tuning, and high-speed data modulation at 20 Gbps. Our results demonstrate a missing component for cryogenic PICs, removing major roadblocks for the realization of cryogenic-compatible systems in the field of quantum computing, supercomputing and sensing, and for interfacing those systems with instrumentation at room temperature. The integration of barium titanate thin films with silicon-based waveguides enables the operation of efficient electro-optic switches and modulators at temperatures as low as 4 K, with potential applications in quantum computing and cryogenic computing technologies.

The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for integrating such compact circuits, but a strong Pockels effect is not available on silicon platforms. Here, we demonstrate a large electro-optical response in silicon photonic devices using barium titanate. We verify the Pockels effect to be the physical origin of the response, with r42 = 923 pm V−1, by confirming key signatures of the Pockels effect in ferroelectrics: the electro-optic response exhibits a crystalline anisotropy, remains strong at high frequencies, and shows hysteresis on changing the electric field. We prove that the Pockels effect remains strong even in nanoscale devices, and show as a practical example data modulation up to 50 Gbit s−1. We foresee that our work will enable novel device concepts with an application area largely extending beyond communication technologies.

In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO 3 /BaTiO 3 /SrTiO 3 superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c -axis oriented BaTiO 3 layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO 3 single film and conventional BaTiO 3 /SrTiO 3 superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO 3 as the thickness of BaTiO 3 increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities. Integrating multifunctional oxides on silicon is highly desirable. Here, the authors present asymmetric BaTiO3 superlattices on silicon exhibiting enhanced out-of-plane polarization by harnessing the interfacial strain and broken inversion symmetry.

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff =148 pm V −1 , which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches. The strong electro-optical response of BaTiO 3 could be useful for making high-speed switches for optical telecommunications. Abel et al . demonstrate the ability to maintain this response in BaTiO 3 films grown directly onto silicon, extending its potential to the development of silicon photonics.

A novel class of programmable integrated photonic circuits has emerged over the past years, strongly driven by approaches to tackle unsolved computing problems in the optical domain. Photonic neuromorphic and quantum computing are examples of optical systems implemented in complex photonic circuits, which are reconfigured before and during operation. However, a key building block to enable efficient reconfigurable optical network architectures is still missing: a non-volatile optical phase shifter. Here we demonstrate such an element—compatible with silicon photonics—based on the monolithic integration of BaTiO3 thin films with silicon waveguides. By manipulating ferroelectric domains in BaTiO3 with electrical control signals, we achieve analogue and non-volatile optical phase tuning with no absorption changes. We demonstrate an eight-level long-term-stable photonic device with non-destructive optical readout and switching energy as low as 4.6 pJ. With our results, an analogue non-volatile photonic element is added to the integrated photonics toolbox, enabling a new generation of power-efficient programmable photonic circuits.Researchers demonstrate a multilevel non-volatile phase shifter memory that is based on the monolithic integration of BaTiO3 thin films and silicon waveguides. By manipulating ferroelectric domains in BaTiO3 with electrical control signals, they achieve analogue and non-volatile optical phase tuning.

In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO /BaTiO /SrTiO superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO single film and conventional BaTiO /SrTiO superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO as the thickness of BaTiO increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of More than Moore technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the More than Moore strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14–18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO\\(_4\\) layer is fabricated at a low thermal budget (~375\\(^\\circ\\)C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.