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The determination of the speciation of ions and molecules in supercritical aqueous fluids under pressure is critical to understanding their mass transport in the Earth’s interior. Unfortunately, there is no experimental technique yet available to directly characterize species dissolved in water at extreme conditions. Here we present a strategy, based on first-principles simulations, to determine ratios of Raman scattering cross-sections of aqueous species under extreme conditions, thus providing a key quantity that can be used, in conjunction with Raman measurements, to predict chemical speciation in aqueous fluids. Due to the importance of the Earth’s carbon cycle, we focus on carbonate and bicarbonate ions. Our calculations up to 11 GPa and 1000 K indicate a higher concentration of bicarbonates in water than previously considered at conditions relevant to the Earth’s upper mantle, with important implications for the transport of carbon in aqueous fluids in the Earth’s interior. The determination of the speciation of ions and molecules in supercritical aqueous fluids under pressure is key to understanding their mass transport in the Earth’s interior. Here the authors present a strategy based on ab-initio molecular dynamics to determine the speciation of carbonates in aqueous fluids.

Quantum computers hold promise to enable efficient simulations of the properties of molecules and materials; however, at present they only permit ab initio calculations of a few atoms, due to a limited number of qubits. In order to harness the power of near-term quantum computers for simulations of larger systems, it is desirable to develop hybrid quantum-classical methods where the quantum computation is restricted to a small portion of the system. This is of particular relevance for molecules and solids where an active region requires a higher level of theoretical accuracy than its environment. Here, we present a quantum embedding theory for the calculation of strongly-correlated electronic states of active regions, with the rest of the system described within density functional theory. We demonstrate the accuracy and effectiveness of the approach by investigating several defect quantum bits in semiconductors that are of great interest for quantum information technologies. We perform calculations on quantum computers and show that they yield results in agreement with those obtained with exact diagonalization on classical architectures, paving the way to simulations of realistic materials on near-term quantum computers.

n-Type bismuth vanadate has been identified as one of the most promising photoanodes for use in a water-splitting photoelectrochemical cell. The major limitation of BiVO 4 is its relatively wide bandgap (∼2.5 eV), which fundamentally limits its solar-to-hydrogen conversion efficiency. Here we show that annealing nanoporous bismuth vanadate electrodes at 350 °C under nitrogen flow can result in nitrogen doping and generation of oxygen vacancies. This gentle nitrogen treatment not only effectively reduces the bandgap by ∼0.2 eV but also increases the majority carrier density and mobility, enhancing electron–hole separation. The effect of nitrogen incorporation and oxygen vacancies on the electronic band structure and charge transport of bismuth vanadate are systematically elucidated by ab initio calculations. Owing to simultaneous enhancements in photon absorption and charge transport, the applied bias photon-to-current efficiency of nitrogen-treated BiVO 4 for solar water splitting exceeds 2%, a record for a single oxide photon absorber, to the best of our knowledge. Bismuth vanadate is a promising photoanode for water-splitting, although its performance is limited by its wide bandgap. Here, the authors show that a gentle nitrogen treatment can result in nitrogen doping and oxygen vacancy generation, simultaneously reducing bandgap and increasing charge transport.

Heterogeneous electrocatalysis is critical to many energy conversion processes. Theoretical and computational approaches are essential to interpret experimental data and provide the mechanistic understanding necessary to design more effective catalysts. However, automated general procedures to build predictive theoretical and computational frameworks are not readily available; specific choices must be made in terms of the atomistic structural model and the level of theory, as well as the experimental data used to inform and validate these choices. Here we outline some best practices for modelling heterogeneous systems and present examples in the context of catalysis at metal electrodes and oxides. The level of theory should be chosen for the specific system and properties of interest, and experimental validation is essential from the beginning to the end of the study. Continuous feedback and ultimate integration between experiment and theory enhances the power of calculations to elucidate mechanisms, identify effective descriptors and clarify design principles. Theoretical modelling is essential to deepen our understanding of heterogeneous electrocatalytic energy conversion processes, such as water splitting. Here, Sharon Hammes-Schiffer and Giulia Galli offer their perspectives on the best strategies for successfully studying such systems.

Computational screening of materials for solar to fuel conversion technologies has mostly focused on bulk properties, thus neglecting the structure and chemistry of surfaces and interfaces with water. We report a finite temperature study of WO3, a promising anode for photoelectrochemical cells, carried out using first-principles molecular dynamics simulations coupled with many-body perturbation theory. We identified three major factors determining the chemical reactivity of the material interfaced with water: the presence of surface defects, the dynamics of excess charge at the surface, and finite temperature fluctuations of the surface electronic orbitals. These general descriptors are essential for the understanding and prediction of optimal oxide photoabsorbers for water oxidation.

Spin defects in semiconducting solids are promising platforms for the realization of quantum bits. At low temperature and in the presence of a large magnetic field, the central spin decoherence is mainly due to the fluctuating magnetic field induced by nuclear spin flip-flop transitions. Using spin Hamiltonians and a cluster expansion method, we investigate the electron spin coherence of defects in two-dimensional (2D) materials, including delta-doped diamond layers, thin Si films, MoS2, and h-BN. We show that isotopic purification is much more effective in 2D than in three-dimensional materials, leading to an exceptionally long spin coherence time of more than 30 ms in an isotopically pure monolayer of MoS2.

Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom — Sb, Bi, or I — occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209 Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies. Recently, long spin coherence times have been predicted for spin defects in simple oxides. Here, by using high-throughput first-principles calculations, the authors identify promising spin defects in CaO, with electronic properties similar to those of NV centers but with longer coherence times.

The full realization of spin qubits for quantum technologies relies on the ability to control and design the formation processes of spin defects in semiconductors and insulators. We present a computational protocol to investigate the synthesis of point-defects at the atomistic level, and we apply it to the study of a promising spin-qubit in silicon carbide, the divacancy (VV). Our strategy combines electronic structure calculations based on density functional theory and enhanced sampling techniques coupled with first principles molecular dynamics. We predict the optimal annealing temperatures for the formation of VVs at high temperature and show how to engineer the Fermi level of the material to optimize the defect’s yield for several polytypes of silicon carbide. Our results are in excellent agreement with available experimental data and provide novel atomistic insights into point defect formation and annihilation processes as a function of temperature. Spin defects in semiconductors are promising for quantum technologies but understanding of defect formation processes in experiment remains incomplete. Here the authors present a computational protocol to study the formation of spin defects at the atomic scale and apply it to the divacancy defect in SiC.

Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science that goes back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast increasing, and requires an in-depth understanding of the defects’ spin, optical, charge and material properties in this modern context. This is especially critical for discovering new relevant systems for specific quantum applications. In this Review, we expand upon all the key components of solid-state spin defects, with an emphasis on the properties of defects and of the host material, on engineering opportunities and on other pathways for improvement. This Review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing broad guidelines for the field of solid-state spin defects for quantum information. Defect-based spin qubits offer a versatile platform for creating solid-state quantum devices. This Review is a guide for understanding the properties and applications of current spin defects, and provides a framework for designing, engineering and discovering new qubit candidates

Understanding redox and photochemical reactions in aqueous environments requires a precise knowledge of the ionization potential and electron affinity of liquid water. The former has been measured, but not the latter. We predict the electron affinity of liquid water and of its surface from first principles, coupling path-integral molecular dynamics with ab initio potentials, and many-body perturbation theory. Our results for the surface (0.8 eV) agree well with recent pump-probe spectroscopy measurements on amorphous ice. Those for the bulk (0.1–0.3 eV) differ from several estimates adopted in the literature, which we critically revisit. We show that the ionization potential of the bulk and surface are almost identical; instead their electron affinities differ substantially, with the conduction band edge of the surface much deeper in energy than that of the bulk. We also discuss the significant impact of nuclear quantum effects on the fundamental gap and band edges of the liquid. The electron affinity of liquid water is a fundamental property which has not yet been accurately measured. Here, the authors predict this property by coupling path-integral molecular dynamics with ab initio potentials and electronic structure calculations, revisiting several estimates used in the literature.