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The structural, optical, electrical and photoelectric properties of n -type CdS 1− x Sb x layers at varied Sb doping concentrations ( x  = 0, 0.2, 0.4 and 0.6 at.%) were studied. The melt quenching process was used to generate the bulk form, whereas the thin layers were formed using the thermal evaporation method. To fabricate the Al/ n -(CdS:Sb)/ p -Si/Pt solar cell, pure CdS and antimony-doped CdS layers of up to 200 nm thickness ( n -type side) were deposited on a single-crystallized silicon glass substrate (2 mm) with the Miller's directions (1 0 0). The fabricated solar cells' dark and illuminated current density–voltage ( J–V ), the power–voltage ( P–V ) and the capacitance–voltage ( C – V ) characteristics were thoroughly studied. As well, the open-circuit voltage, the short-circuit current, the fill factor and the power conversion efficiency (PCE) for the studied solar cell were computed. When the antimony ratio is 0.6 at.%, the maximum power conversion efficiency is 30.56%, with the main parameters: J sc  = 26.27 mA/cm 2 , V oc  = 0.84 V, and FF  = 0.692. In the instance of using the manufactured devices as detectors, the responsivity and quantum efficiency in the spectrum range of (100–1000 nm) were determined.

Cadmium atoms were used to dope the non-crystalline SeS thin films prepared at 298 K using a vacuum evaporation. The prepared thin films (~ 300 nm) were according to the Cd x Se 85 S 15- x system and in the corresponding proportions ( x  = 0, 5, 10, and 15 at.%). In this process, pure film and three cadmium-doped films were obtained. Structural analysis was utilized to confirm the amorphous nature of the pure and Cd-doped thin films. A tremendous effort has been devoted to accurate and flexible detailing of the linear and non-linear optical properties of the studied system. The linear optical path in this work was based on calculating the absorption coefficient, the optical parameters, the optical constants, the dielectric constants, the quality factor of thin films, the dispersion parameters, the optical dispersion coefficients, phase and group velocities, Verdet’s coefficients, and Kirchhoff’s functions were determined. As well, the non-linear optical qualities have been computed.

Nucleophosmin (NPM) gene mutations are the most frequent genetic abnormality in adult AML. NPM gene mutation (NPM1) leads to aberrant localization of the NPM protein into the cytoplasm. As NPM1 mutation is frequently associated with FMS-like tyrosine kinase 3—internal tandem duplication (FLT3-ITD) that appears to abrogate its favorable prognostic effect. This study aimed at detecting the frequency of NPM1 exon-12 gene mutation and FLT3-ITD in 62 de novo AML patients by reverse-transcriptase polymerase chain reaction and immunocytochemical staining. Twenty age- and sex-matched healthy volunteers were included in the current study as a control group. NPM1 mutation was detected in 30/62 (48.3%) of cases, while 27/62 (43.5%) of cases were FLT3-ITD-positive. All the control subjects were negative for the studied genetic mutations. Immunostaining for NPM revealed cytoplasmic positivity (NPMc + ) in 32/62 (51.6%) of case. NPM1 mutation was significantly higher in patients with normal karyotype, FAB-M4 subtype, low expression of CD34 and favorable response to induction therapy. FLT3-ITD was higher among female patients and was associated with poor response to induction therapy. Patients harboring both mutations showed unfavorable response as the presence of FLT3-ITD abolished the favorable effect of NPM1. In conclusion, all AML cases should be screened prior to therapy for both mutations as two important prognostic markers that can be valuable in predicting the response to therapy, in addition to their role in monitoring minimal residual disease and early detection of relapse. Furthermore, they represent potential therapeutic targets.