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This work presents an asymmetric p-i-p silicon diode structure (a-p-i-p) characterized using the Transient Current Technique (TCT) with a scanning pulsed laser system. The device, fabricated on n-type silicon (3–5 Ω·cm) with two identical p+-doped meandering line electrodes (one of which is obscured by a black resin layer), was tested in photovoltaic mode (zero bias) under laser excitation at 660 nm, 980 nm, and 1064 nm wavelengths. The transient photocurrent response was recorded as the laser spot was scanned across the device surface with 0.01 mm spatial resolution. A pronounced wavelength-dependent response was observed: the shortest wavelength (660 nm) produced the largest transient current signals, while longer wavelengths (980 nm, 1064 nm) yielded progressively weaker responses. This study introduces a fundamentally new design paradigm that enables the p-i-p diode to operate in photovoltaic mode.

We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43 ± 0.14) × 1016 neutrons/cm2, and (6.5 ± 1.4) × 1014 pions/cm2, respectively. By observing the charge induced due to the separation of electron–hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62 ± 0.07(stat) ± 0.16(syst) × 10–18 cm2/(p μm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65 ± 0.13(stat) ± 0.18(syst) × 10–18 cm2/(n μm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0 ± 0.2(stat) ± 0.5(syst) × 10–18 cm2/(π μm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve.

The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to their outstanding performance in terms of radiation hardness, thin n-in-p sensors are promising candidates to instrument a section of the new pixel system. Recently produced and developed sensors of new designs will be presented. To test the sensors before interconnection to chips, a punch-through biasing structure has been implemented. Its design has been optimized to decrease the possible tracking efficiency losses observed. After irradiation, they were caused by the punch-through biasing structure. A sensor compatible with the ATLAS FE-I4 chip with a pixel size of 50x250 \\(\\mathrm{\\mu}\\)m\\(^{2}\\), subdivided into smaller pixel implants of 30x30 \\(\\mathrm{\\mu}\\)m\\(^{2}\\) size was designed to investigate the performance of the 50x50 \\(\\mathrm{\\mu}\\)m\\(^{2}\\) pixel cells foreseen for the HL-LHC. Results on sensor performance of 50x250 and 50x50 \\(\\mathrm{\\mu}\\)m\\(^{2}\\) pixel cells in terms of efficiency, charge collection and electric field properties are obtained with beam tests and the Transient Current Technique.

The European Committee for Future Accelerators (ECFA) Early-Career Researcher (ECR) panel, which represents the interests of the ECR community to ECFA, presents in this document its initiatives and activities in the year 2023. This report summarises the process of the first big turnover in the panel composition at the start of 2023 and reports on the activities of the active working groups - either pursued from before or newly established. The overarching goal of the ECFA-ECR panel is to better understand and support the diverse interests of early-career researchers in the ECFA community and beyond.

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k\\(\\Omega\\)cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1\\(\\cdot\\)10\\(^{13}\\) n/cm\\(^{2}\\) and 5\\(\\cdot\\)10\\(^{13}\\) n/cm\\(^{2}\\) and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1\\(\\cdot\\)10\\(^{15}\\) n/cm\\(^{2}\\) is more than 50 \\(\\mu\\)m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

The European Committee for Future Accelerators (ECFA) Early Career Researcher's (ECR) panel, which represents the interests of the ECR community to ECFA, officially began its activities in January 2021. In the first two years, the panel has defined its own internal structure, responded to ECFA requests for feedback, and launched its own initiatives to better understand and support the diverse interests of early career researchers. This report summarises the panel composition and structure, as well as the different activities the panel has been involved with during the first two years of its existence.

The European Committee for Future Accelerators (ECFA) Early-Career Researchers (ECR) Panel was invited by the ECFA Detector R&D Roadmap conveners to collect feedback from the European ECR community. A working group within the ECFA ECR panel held a Townhall Meeting to get first input, and then designed and broadly circulated a detailed survey to gather feedback from the larger ECR community. A total of 473 responses to this survey were received, providing a useful overview of the experiences of ECRs in instrumentation training and related topics. This report summarises the feedback received, and is intended to serve as an input to the ECFA Detector R&D Roadmap process.