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Piezoelectric materials are widely referred to as “smart” materials because they can transduce mechanical pressure acting on them to electrical signals and vice versa. They are extensively utilized in harvesting mechanical energy from vibrations, human motion, mechanical loads, etc., and converting them into electrical energy for low power devices. Piezoelectric transduction offers high scalability, simple device designs, and high‐power densities compared to electro‐magnetic/static and triboelectric transducers. This review aims to give a holistic overview of recent developments in piezoelectric nanostructured materials, polymers, polymer nanocomposites, and piezoelectric films for implementation in energy harvesting. The progress in fabrication techniques, morphology, piezoelectric properties, energy harvesting performance, and underpinning fundamental mechanisms for each class of materials, including polymer nanocomposites using conducting, non‐conducting, and hybrid fillers are discussed. The emergent application horizon of piezoelectric energy harvesters particularly for wireless devices and self‐powered sensors is highlighted, and the current challenges and future prospects are critically discussed. This paper presents a comprehensive review of the energy harvesting performance of different types of piezoelectric materials. These materials include nanostructured materials, polymers, polymer nanocomposites synthesized using different types of fillers and piezoelectric films. The fabrication techniques, energy harvesting mechanisms, and applications of piezoelectric nanogenerators built using these materials are discussed thoroughly.

Spectrometers with ever-smaller footprints are sought after for a wide range of applications in which minimized size and weight are paramount, including emerging in situ characterization techniques. We report on an ultracompact microspectrometer design based on a single compositionally engineered nanowire. This platform is independent of the complex optical components or cavities that tend to constrain further miniaturization of current systems. We show that incident spectra can be computationally reconstructed from the different spectral response functions and measured photocurrents along the length of the nanowire. Our devices are capable of accurate, visible-range monochromatic and broadband light reconstruction, as well as spectral imaging from centimeter-scale focal planes down to lensless, single-cell–scale in situ mapping.

Solar fuels offer a promising approach to provide sustainable fuels by harnessing sunlight 1 , 2 . Following a decade of advancement, Cu 2 O photocathodes are capable of delivering a performance comparable to that of photoelectrodes with established photovoltaic materials 3 , 4 – 5 . However, considerable bulk charge carrier recombination that is poorly understood still limits further advances in performance 6 . Here we demonstrate performance of Cu 2 O photocathodes beyond the state-of-the-art by exploiting a new conceptual understanding of carrier recombination and transport in single-crystal Cu 2 O thin films. Using ambient liquid-phase epitaxy, we present a new method to grow single-crystal Cu 2 O samples with three crystal orientations. Broadband femtosecond transient reflection spectroscopy measurements were used to quantify anisotropic optoelectronic properties, through which the carrier mobility along the [111] direction was found to be an order of magnitude higher than those along other orientations. Driven by these findings, we developed a polycrystalline Cu 2 O photocathode with an extraordinarily pure (111) orientation and (111) terminating facets using a simple and low-cost method, which delivers 7 mA cm −2 current density (more than 70% improvement compared to that of state-of-the-art electrodeposited devices) at 0.5 V versus a reversible hydrogen electrode under air mass 1.5 G illumination, and stable operation over at least 120 h. A study introduces a novel method to grow single-crystal Cu 2 O thin films with selected crystal orientations, highlighting enhanced bulk carrier mobility and carrier diffusion length along the [111] direction that yields Cu 2 O photocathodes with improved performance.

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems. Crystal phase switching between zinc-blende and wurtzite phases during the growth of gallium arsenide nanowires is observed experimentally, and explained via changes in the geometry of the catalytic droplet sitting on top of the growing nanowire. Crystal phase switching in semiconductor nanowires Highly detailed in situ electron microscopy observations of gallium arsenide (GaAs) nanowires as they grow in, and switch between, two crystal phases — a zinc-blende stable bulk phase and (metastable) wurtzite are presented. The resulting images reveal that it is the geometry of the droplet sitting atop the growing nanowire, via the faceted edge structures of the nanowire which controls which phase is selected. This study is a technical tour de force, and could lead to precise phase control in nanowires, a substantial advance towards applications in quantum optics and nanoelectronics.

The interface structure of graphene with thermally evaporated metal oxide layers, in particular molybdenum trioxide (MoO 3 ), is studied combining photoemission spectroscopy, sheet resistance measurements and organic light emitting diode (OLED) characterization. Thin (<5 nm) MoO 3 layers give rise to an 1.9 eV large interface dipole and a downwards bending of the MoO 3 conduction band towards the Fermi level of graphene, leading to a near ideal alignment of the transport levels. The surface charge transfer manifests itself also as strong and stable p-type doping of the graphene layers, with the Fermi level downshifted by 0.25 eV and sheet resistance values consistently below 50 Ω/sq for few-layer graphene films. The combination of stable doping and highly efficient charge extraction/injection allows the demonstration of simplified graphene-based OLED device stacks with efficiencies exceeding those of standard ITO reference devices.

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼10 12  inch −2 ). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics. Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al . use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs. 2D materials are foreseen as an opportunity to tailor spintronics devices interfaces, a.k.a spinterfaces. Here, using state-of-the-art large-scale integration in spin-valves, authors demonstrate that hybridization of graphene with a metallic spin source results in strong spin filtering effects.

Semiconductor nanowires with precisely controlled structure, and hence well-defined electronic and optical properties, can be grown by self-assembly using the vapour–liquid–solid process. The structure and chemical composition of the growing nanowire is typically determined by global parameters such as source gas pressure, gas composition and growth temperature. Here we describe a more local approach to the control of nanowire structure. We apply an electric field during growth to control nanowire diameter and growth direction. Growth experiments carried out while imaging within an in situ transmission electron microscope show that the electric field modifies growth by changing the shape, position and contact angle of the catalytic droplet. This droplet engineering can be used to modify nanowires into three dimensional structures, relevant to a range of applications, and also to measure the droplet surface tension, important for quantitative development of strategies to control nanowire growth. Semiconductor nanowires with precisely controlled structure can be grown by self-assembly using the vapor-liquid-solid process. Here, the authors report a more local growth control strategy using an electric field applied during growth to control nanowire diameter and growth direction.

Effective control of terahertz radiation requires fast and efficient modulators with a large modulation depth—a challenge that is often tackled by using metamaterials. Metamaterial-based active modulators can be created by placing graphene as a tuneable element shunting regions of high electric field confinement in metamaterials. However, in this common approach, the graphene is used as a variable resistor, and the modulation is achieved by resistive damping of the resonance. In combination with the finite conductivity of graphene due to its gapless nature, achieving 100% modulation depth using this approach remains challenging. Here, we embed nanoscale graphene capacitors within the gaps of the metamaterial resonators, and thus switch from a resistive damping to a capacitive tuning of the resonance. We further expand the optical modulation range by device excitation from its substrate side. As a result, we demonstrate terahertz modulators with over four orders of magnitude modulation depth (45.7 dB at 1.68 THz and 40.1 dB at 2.15 THz), and a reconfiguration speed of 30 MHz. These tuneable capacitance modulators are electrically controlled solid-state devices enabling unity modulation with graphene conductivities below 0.7 mS. The demonstrated approach can be applied to enhance modulation performance of any metamaterial-based modulator with a 2D electron gas. Our results open up new frontiers in the area of terahertz communications, real-time imaging, and wave-optical analogue computing. By switching from a variable resistance to a tunable capacitance modulation principle using nanoscale lateral capacitors and leveraging substrate-side reflection, we achieve 100% amplitude modulation in graphene-based metamaterial terahertz modulators.

The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 ∘ C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 ∘ C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.