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Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile memories 1 , 2 . As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides—the archetypal ferroelectric system 3 . Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes 4 . Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO 2 ), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime. Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer deposition, even at thicknesses of just one nanometre.

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage 1 . This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO 2  (ref.  2 ), which remains the material of choice to date. Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal–oxide–semiconductor capacitors is equivalent to an effective SiO 2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO 2 -based high-dielectric-constant gate stacks without scavenging the interfacial SiO 2 , which has adverse effects on the electron transport and gate leakage current 3 . Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO 2 –ZrO 2 multilayers, stabilized with competing ferroelectric–antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO 2 -based high-dielectric-constant materials. In the standard Si transistor gate stack, replacing conventional dielectric HfO 2  with an ultrathin ferroelectric–antiferroelectric HfO 2 –ZrO 2  heterostructure exhibiting the negative capacitance effect demonstrates ultrahigh capacitance without degradation in leakage and mobility, promising for ferroelectric integration into advanced logic technology.

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal Gd x Co 100− x . Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the Gd x Co 100− x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted Gd x Co 100− x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions. Ferrimagnets contain two magnetic atoms with different magnetizations, and exhibit many features of antiferromagnets, however, they still retain a net magnetic moment, like ferromagnets. Here, Hsu et al make use of this combination of ferromagnetic and antiferromagnet properties to demonstrate a diverse array of magnetic switching phenomena in ferrimagnetic GdCo thin films that have previously only been observed in antiferromagnetic/ferromagnetic bilayers.

This study describes the fabrication of an electrospun, U-shaped optical fiber sensor for temperature measurements. The sensor is based on single mode fibers and was fabricated into a U-shaped optical fiber sensor through flame heating. This study applied electrospinning to coat PVA, a polymer, onto the sensor layer to reduce its sensitivity to humidity. The sensor is used to measure temperature variations ranging from 30 °C to 100 °C. The objectives of this study were to analyze the sensitivity variation of the sensor with different sensor layer thicknesses resulting from different electrospinning durations, as well as to simulate the wavelength signals generated at different electrospinning durations using COMSOL. The results revealed that the maximum wavelength sensitivity, transmission loss sensitivity, and linearity of the sensor were 25 dBm/°C, 70 pm/°C, and 0.956, respectively. Longer electrospinning durations resulted in thicker sensor layers and higher sensor sensitivity, that wavelength sensitivity of the sensor increased by 42%.

The influence of the bending radius on the sensitivity of the graphene quantum dots (GQDs)-coated probe is experimentally investigated for a U-shaped probe. The fiber is bent into a U shape using the optic fiber flame heating method, and the optic fiber is enclosed in a glass tube to increase the stability of the probe. The surface of the U-shaped optical fiber was coated with electrospun fibers formed via electrospinning. Polymer materials doped with GQDs are applied to U-shaped optical fiber as humidity sensors. Graphene quantum dot nanofibers on the U-shaped optical fiber sensor to form a network structure of graphene quantum dots U-shape fiber sensor (GQDUS). The polymer network structure absorbs water molecules, which in turn affects the bending radius of the optical fiber, and changes the optical fiber spectrum. Graphene quantum dots provide optical enhancement benefits, which in turn increase the sensitivity of fiber optic sensors. The spectra monitoring system consists of an optical spectrum analyzer (OSA) and an amplified spontaneous emission (ASE). This system can be used to detect humidity changes between 20% RH and 80% RH in the chamber. Our results indicate promising applications for quantum dots probe sensors from electrospun nanofibers increasing sensitive environmental monitoring. As such, it could be of substantial value in optical sensors detection.

Materials with large spin–orbit torque (SOT) hold considerable significance for many spintronic applications because of their potential for energy-efficient magnetization switching. Unfortunately, most of the existing materials exhibit an SOT efficiency factor that is much less than unity, requiring a large current for magnetization switching. The search for new materials that can exhibit an SOT efficiency much greater than unity is a topic of active research, and only a few such materials have been identified using conventional approaches. In this paper, we present a machine learning-based approach using a word embedding model that can identify new results by deciphering non-trivial correlations among various items in a specialized scientific text corpus. We show that such a model can be used to identify materials likely to exhibit high SOT and rank them according to their expected SOT strengths. The model captured the essential spintronics knowledge embedded in scientific abstracts within various materials science, physics, and engineering journals and identified 97 new materials to exhibit high SOT. Among them, 16 candidate materials are expected to exhibit an SOT efficiency greater than unity, and one of them has recently been confirmed with experiments with quantitative agreement with the model prediction.

Rheumatoid arthritis (RA) is regarded as a chronic, immune-mediated disease that leads to the damage of various types of immune cells and signal networks, followed by inappropriate tissue repair and organ damage. RA is primarily manifested in the joints, but also manifests in the lungs and the vascular system. This study developed a method for the in vitro detection of RA through cyclic citrullinated peptide (CCP) antibodies and antigens. The diameter of a tilted-fiber Bragg grating (TFBG) biosensor was etched to 50 μm and then bonded with CCP antigens and antibodies. The small variations in the external refractive index and the optical fiber cladding were measured. The results indicated that the self-assembled layer of the TFBG biosensor was capable of detecting pre- and post-immune CCP antigen and CCP peptide concentrations within four minutes. A minimum CCP concentration of 1 ng/mL was detected with this method. This method is characterized by the sensor’s specificity, ability to detect CCP reactions, user-friendliness, and lack of requirement for professional analytical skills, as the detections are carried out by simply loading and releasing the test samples onto the platform. This study provides a novel approach to medical immunosensing analysis and detection. Although the results for the detection of different concentrations of CCP antigen are not yet clear, it was possible to prove the concept that the biosensor is feasible even if the measurement is not easy and accurate at this stage. Further study and improvement are required.

A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO 3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO 3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin–torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO 3 , an all-oxide, energy-scalable logic is demonstrated composed of spin–orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics. The authors report a modulation of the magnon spin current by electric polarization reversal.

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal GdxCo100-x. Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the GdxCo100-x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted GdxCo100-x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmission coefficient across the structure with an electric-field via the resonant tunneling phenomena. Using non-equilibrium Green's function (NEGF) method, we show that the structure can exhibit a bias-dependent oscillatory IEC that can switch the free magnet to have either a parallel or an antiparallel configuration with respect to the fixed magnet, depending on the sign of the IEC. Such bi-directional switching can be achieved with the same voltage polarity but different magnitudes. With proper choice of the spacer material, the current in the structure can be significantly reduced. Due to the conservative nature of the exerted torque by the IEC, the switching threshold of the proposed mechanism is decoupled from the switching speed, while the conventional spin-torque devices exhibit a trade-off due to the non-conservative nature of the exerted torque.