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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors. Photogating is considered as a way of conductance modulation through photoinduced voltage. The origins, formations, and characteristics of the trap‐ and hybrid‐induced photogating are discussed. This type of photogating enables a trade‐off between gain and bandwidth. However, general photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

Photodetectors based on two-dimensional (2D) materials have been the focus of intensive research and development over the past decade. However, a gap has long persisted between fundamental research and mature applications. One of the main reasons behind this gap has been the lack of a practical and unified approach for the characterization of their figures of merit, which should be compatible with the traditional performance evaluation system of photodetectors. This is essential to determine the degree of compatibility of laboratory prototypes with industrial technologies. Here we propose general guidelines for the characterization of the figures of merit of 2D photodetectors and analyze common situations when the specific detectivity, responsivity, dark current, and speed can be misestimated. Our guidelines should help improve the standardization and industrial compatibility of 2D photodetectors. The lack of a standardized approach for the characterization of the performance of 2D photodetectors represents an important obstacle towards their industrialization. Here, the authors propose practical guidelines to characterize their figures of merit and analyse common situations where their performance can be misestimated.

With the advent of the Internet of Things era, the detection and recognition of moving objects is becoming increasingly important1. The current motion detection and recognition (MDR) technology based on the complementary metal oxide semiconductor (CMOS) image sensors (CIS) platform contains redundant sensing, transmission conversion, processing and memory modules, rendering the existing systems bulky and inefficient in comparison to the human retina. Until now, non-memory capable vision sensors have only been used for static targets, rather than MDR. Here, we present a retina-inspired two-dimensional (2D) heterostructure based retinomorphic hardware device with all-in-one perception, memory and computing capabilities for the detection and recognition of moving trolleys. The proposed 2D retinomorphic device senses an optical stimulus to generate progressively tuneable positive/negative photoresponses and memorizes it, combined with interframe differencing computations, to achieve 100% separation detection of moving trichromatic trolleys without ghosting. The detected motion images are fed into a conductance mapped neural network to achieve fast trolley recognition in as few as four training epochs at 10% noise level, outperforming previous results from similar customized datasets. The prototype demonstration of a 2D retinomorphic device with integrated perceptual memory and computation provides the possibility of building compact, efficient MDR hardware.A retina-inspired two-dimensional material based retinomorphic device exhibits all-in-one perception, memory and computing capabilities for motion detection and recognition.

Organic-inorganic hybrid perovskite (OIHP) photodetectors that simultaneously achieve an ultrafast response and high sensitivity in the near-infrared (NIR) region are prerequisites for expanding current monitoring, imaging, and optical communication capbilities. Herein, we demonstrate photodetectors constructed by OIHP and an organic bulk heterojunction (BHJ) consisting of a low-bandgap nonfullerene and polymer, which achieve broadband response spectra up to 1 μm with a highest external quantum efficiency of approximately 54% at 850 nm, an ultrafast response speed of 5.6 ns and a linear dynamic range (LDR) of 191 dB. High sensitivity, ultrafast speed and a large LDR are preeminent prerequisites for the practical application of photodetectors. Encouragingly, due to the high-dynamic-range imaging capacity, high-quality visible-NIR actual imaging is achieved by employing the OIHP photodetectors. We believe that state-of-the-art OIHP photodetectors can accelerate the translation of solution-processed photodetector applications from the laboratory to the imaging market.Perovskites peer into near-infraredNovel photodetectors developed by researchers in China provide imaging in the near-infrared (NIR) region with record-breaking efficiency and speed. A new class of semiconducting materials called organic-inorganic hybrid perovskites (OIHPs) display excellent optical and electrical properties for thin-film solar cells, LEDs and light detectors. To expand their detection range to NIR, which is useful for biomedical applications, OIHPs can be combined with structures called organic bulk-heterojunctions (BHJs). Now, Weida Hu, Liang Shen and co-workers at Jilin University, Chinese Academy of Sciences and Peking University have designed new OIHP-BHJ photodetectors that efficiently detect a wide range of both visible and NIR radiation. Their prototype sensors have ultra-fast response times of just 5.6 nanoseconds and remain sensitive even in low brightness, suggesting that they could accelerate the movement of OIHP devices from lab tests to commercial imaging.

Next-generation polarized mid-infrared imaging systems generally requires miniaturization, integration, flexibility, good workability at room temperature and in severe environments, etc. Emerging two-dimensional materials provide another route to meet these demands, due to the ease of integrating on complex structures, their native in-plane anisotropy crystal structure for high polarization photosensitivity, and strong quantum confinement for excellent photodetecting performances at room temperature. However, polarized infrared imaging under scattering based on 2D materials has yet to be realized. Here we report the systematic investigation of polarized infrared imaging for a designed target obscured by scattering media using an anisotropic tellurium photodetector. Broadband sensitive photoresponse is realized at room temperature, with excellent stability without degradation under ambient atmospheric conditions. Significantly, a large anisotropic ratio of tellurium ensures polarized imaging in a scattering environment, with the degree of linear polarization over 0.8, opening up possibilities for developing next-generation polarized mid-infrared imaging technology. Photodetectors operating within scattering environment can be realized with anisotropic materials. Here, the authors report polarization sensitive photodetectors based on thin tellurium nanosheets with high photoresponsivity of 3.54 × 10 2  A/W, detectivity of ~3.01 × 10 9  Jones in the mid-infrared range and an anisotropic ratio of ∼8 for 2.3 μm illumination to ensure polarized imaging.

Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS 2 VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS 2 heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS 2 realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 μs, and high detectivity of 4.7 × 10 12 Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS 2 van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices. Band alignment engineering is important to realize high performance and multifunctionality in a specific van der Waals heterojunction. Here, the authors observe band alignment transition of the heterojunction in a ferroelectric-tuned van der Waals heterojunction device with high performance.

Impact ionization, which supports carrier multiplication, is promising for applications in single photon detection1 and sharp threshold swing field effect devices2. However, initiating the impact ionization of avalanche breakdown requires a high applied electric field in a long active region, which hampers carrier multiplication with a high gain, low bias and superior noise performance3,4. Here we report the observation of ballistic avalanche phenomena in sub-mean free path (MFP) scaled vertical InSe/black phosphorus (BP)5–9 heterostructures10. We use these heterojunctions to fabricate avalanche photodetectors (APDs) with a sensitive mid-infrared light detection (4 μm wavelength) and impact ionization transistors with a steep subthreshold swing (<0.25 mV dec–1). The devices show a low avalanche threshold (<1 V), low noise figure and distinctive density spectral shape. Our transport measurements suggest that the breakdown originates from a ballistic avalanche phenomenon, where the sub-MFP BP channel support the lattice impact ionization by electrons and holes and the abrupt current amplification without scattering from the obstacles in a deterministic nature. Our results provide new strategies for the development of advanced photodetectors1,11,12 via efficient carrier manipulation at the nanoscale.Ballistic avalanche phenomena in vertical InSe/BP heterostructures enable the demonstration of high-performance avalanche photodetectors and impact ionization transistors.

With the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (D*) of 6.4 × 109 cm Hz1/2 W−1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection.

Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared photodetectors, memory units, and computing units to enhance machine vision. Real-time processing and decision-making challenges emerge with the increasing number of intelligent pixels. However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking. Here, we demonstrate a non-volatile MoS 2 /black phosphorus (BP) heterojunction MWIR photovoltaic detector featuring a semi-floating gate structure design, integrating near- to mid-infrared photodetection, memory and computing (PMC) functionalities. The PMC device exhibits the property of being able to store a stable responsivity, which varies linearly with the stored conductance state. Significantly, device weights (stable responsivity) can be programmed with power consumption as low as 1.8 fJ, and the blackbody peak responsivity can reach 1.68 A/W for the MWIR band. In the simulation of Faster Region with convolution neural network (CNN) based on the FLIR dataset, the PMC hardware responsivity weights can reach 89% mean Average Precision index of the feature extraction network software weights. This MWIR photovoltaic detector, with its versatile functionalities, holds significant promise for applications in advanced infrared object detection and recognition systems. In-sensor computing architectures can provide energy-efficient multifunctional capabilities, but their application to the mid-infrared range is challenging. Here, the authors report the realization of non-volatile MoS 2 /black phosphorus photovoltaic detectors, integrating near- to mid-infrared photodetection, memory and computing functionalities.

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.