Explore the vast range of titles available.

The motion of electrons in a solid has a profound effect on its topological properties and may result in a nonzero Berry's phase, a geometric quantum phase encoded in the system's electronic wave function. Despite its ubiquity, there are few experimental observations of Berry's phase of bulk states. Here, we report detection of a nontrivial π Berry's phase in the bulk Rashba semiconductor BiTel via analysis of the Shubnikov-de Haas (SdH) effect. The extremely large Rashba splitting in this material enables the separation of SdH oscillations, stemming from the spin-split inner and outer Fermi surfaces. For both Fermi surfaces, we observe a systematic π-phase shift in SdH oscillations, consistent with the theoretically predicted nontrivial π Berry's phase in Rashba systems.

From magnetism, ferroelectricity and superconductivity to electrical and thermal properties, oxides show a broad range of phenomena of fundamental as well as practical relevance. Reviewed here are the emergent phenomena arising at the interface between oxide materials, which have attracted considerable interest based on advances in thin-film deposition techniques. Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces. Different symmetry constraints can be used to design structures exhibiting phenomena not found in the bulk constituents. A characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale. Examples such as interface superconductivity, magneto-electric coupling, and the quantum Hall effect in oxide heterostructures are representative of the scientific and technological opportunities in this rapidly emerging field.

The search continues for nickel oxide-based materials with electronic properties similar to cuprate high-temperature superconductors 1 – 10 . The recent discovery of superconductivity in the doped infinite-layer nickelate NdNiO 2 (refs. 11 , 12 ) has strengthened these efforts. Here, we use X-ray spectroscopy and density functional theory to show that the electronic structure of LaNiO 2 and NdNiO 2 , while similar to the cuprates, includes significant distinctions. Unlike cuprates, the rare-earth spacer layer in the infinite-layer nickelate supports a weakly interacting three-dimensional 5 d metallic state, which hybridizes with a quasi-two-dimensional, strongly correlated state with 3 d x 2 − y 2 symmetry in the NiO 2 layers. Thus, the infinite-layer nickelate can be regarded as a sibling of the rare-earth intermetallics 13 – 15 , which are well known for heavy fermion behaviour, where the NiO 2 correlated layers play an analogous role to the 4 f states in rare-earth heavy fermion compounds. This Kondo- or Anderson-lattice-like ‘oxide-intermetallic’ replaces the Mott insulator as the reference state from which superconductivity emerges upon doping. X-ray spectroscopy and density functional theory are used to show that the electronic structure of the parent compound of superconducting infinite-layer nickelates, while similar to the copper-based high-temperature superconductors, has significant differences.

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations 1 , 2 , 3 . These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions 4 , 5 , 6 . If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides—LaAlO 3 and SrTiO 3 —in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm 2  V -1  s -1 . At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.

The dope on superconducting semiconductors Heavily doped semiconductors can exhibit superconductivity, but their performance is severely limited by extremely large electronic disorder. Similarly, the electron mean free path in low-dimensional superconducting thin films is usually limited by interface scattering or atomic-scale disorder. Kozuka et al . use niobium doping to fabricate a high-quality, two-dimensional superconducting layer within a thin-film heterostructure based on the first known superconducting semiconductor, SrTiO 3 . This should provide a model system in which to explore the quantum transport and interplay of both superconducting and normal electrons. Heavily doped semiconductors, which can exhibit superconductivity, and low-dimensional superconducting thin films are currently limited by interface scattering, electronic or atomic-scale disorder. Here, the fabrication of a high-quality superconducting layer within a thin-film heterostructure based on SrTiO 3 is reported. By selectively doping a narrow region of SrTiO 3 a two-dimensional superconductor is formed that should provide a model system in which to explore the quantum transport and interplay of both superconducting and normal electrons. Semiconductor heterostructures provide an ideal platform for studying high-mobility, low-density electrons in reduced dimensions 1 , 2 , 3 , 4 . The realization of superconductivity in heavily doped diamond 5 , silicon 6 , silicon carbide 7 and germanium 8 suggests that Cooper pairs eventually may be directly incorporated in semiconductor heterostructures 9 , but these newly discovered superconductors are currently limited by their extremely large electronic disorder. Similarly, the electron mean free path in low-dimensional superconducting thin films is usually limited by interface scattering, in single-crystal or polycrystalline samples, or atomic-scale disorder, in amorphous materials, confining these examples to the extreme ‘dirty limit’ 10 . Here we report the fabrication of a high-quality superconducting layer within a thin-film heterostructure based on SrTiO 3 (the first known superconducting semiconductor 11 ). By selectively doping a narrow region of SrTiO 3 with the electron-donor niobium, we form a superconductor that is two-dimensional, as probed by the anisotropy of the upper critical magnetic field. Unlike in previous examples, however, the electron mobility is high enough that the normal-state resistance exhibits Shubnikov–de Haas oscillations that scale with the perpendicular field, indicating two-dimensional states. These results suggest that delta-doped SrTiO 3 provides a model system in which to explore the quantum transport and interplay 12 of both superconducting and normal electrons. They also demonstrate that high-quality complex oxide heterostructures can maintain electron coherence on the macroscopic scales probed by transport, as well as on the microscopic scales demonstrated previously 13 .

Using a fifth-order aberration-corrected scanning transmission electron microscope, which provides a factor of 100 increase in signal over an uncorrected instrument, we demonstrated two-dimensional elemental and valence-sensitive imaging at atomic resolution by means of electron energy-loss spectroscopy, with acquisition times of well under a minute (for a 4096-pixel image). Applying this method to the study of a La₀.₇Sr₀.₃MnO₃/SrTiO₃ multilayer, we found an asymmetry between the chemical intermixing on the manganese-titanium and lanthanum-strontium sublattices. The measured changes in the titanium bonding as the local environment changed allowed us to distinguish chemical interdiffusion from imaging artifacts.

La 0.7 Sr 0.3 MnO₃ is a conducting ferromagnet at room temperature. Combined with thin SrTiO₃ layers, the resulting heterostructures could be used as highly spin-polarized magnetic-tunnel-junction memories. However, when shrunk to dimensions below an apparent critical thickness, the structures become insulating and ferromagnetic ordering is suppressed. Interface spin and charge modulations are thought to create an interfacial dead layer, thus fundamentally limiting the use of this material in atomic-scale devices. The thickness of this dead layer, and whether it is intrinsic, is still controversial. Here we use atomic-resolution electron spectroscopy to demonstrate that the degradation of the magnetic and transport properties of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 multilayers correlates with atomic intermixing at the interfaces, and the presence of extended two-dimensional cation defects in the La 0.7 Sr 0.3 MnO 3 layers (in contrast to three-dimensional precipitates in thick films). When these extrinsic defects are eliminated, metallic ferromagnetism at room temperature can be stabilized in five-unit-cell-thick manganite layers in superlattices, placing the upper limit for any intrinsic dead layer at two unit cells per interface.

The nature and length scales of charge screening in complex oxides are fundamental to a wide range of systems, spanning ceramic voltage-dependent resistors (varistors), oxide tunnel junctions and charge ordering in mixed-valence compounds. There are wide variations in the degree of charge disproportionation, length scale, and orientation in the mixed-valence compounds: these have been the subject of intense theoretical study, but little is known about the microscopic electronic structure. Ohtomo et al have fabricated an idealized structure to examine these issues by growing atomically abrupt layers of LaTi3+O3 embedded in SrTi4+O3. Using an atomic-scale electron beam, they have observed the spatial distribution of the extra electron on the titanium sites. This distribution results in metallic conductivity, even though the superlattice structure is based on two insulators. Despite the chemical abruptness of the interfaces, they find that a minimum thickness of five LaTiO3 layers is required for the centre titanium site to recover bulk-like electronic properties. This represents a framework within which the short-length-scale electronic response can be probed and incorporated in thin-film oxide heterostructures.

The fascinating interfacial transport properties at the LaAlO 3 /SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3 /SrTiO 3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

The purpose of this phase I clinical trial was to evaluate the safety, tolerability and potential efficacy of VM202, naked DNA expressing two isoforms of hepatocyte growth factor, as an adjunct therapy to coronary artery bypass grafting (CABG) in patients with ischemic heart disease (IHD). Nine patients were assigned to receive increasing doses (0.5 to 2.0 mg) of VM202 injected into the right coronary artery (RCA) territory following completion of CABG for the left coronary artery territory. Patients were evaluated for safety and tolerability, and changes in myocardial functions were monitored via echocardiography, cardiac magnetic resonance imaging and myocardial single photon emission computed tomography throughout 6-month follow-up period. No serious complication related to VM202 was observed throughout the 6-month follow-up period. Global myocardial functions (wall motion score index, P =0.0084; stress perfusion, P =0.0002) improved during the follow-up period. In the RCA region, there was an increase in the stress perfusion (baseline vs 3-month, P =0.024; baseline vs 6-month, P =0.024) and also in the wall thickness of the diastolic and systolic phases. Intramyocardial injection of VM202 can be safely used in IHD patients with the tolerable dose of 2.0 mg. In addition, VM202 might appear to have improved regional myocardial perfusion and wall thickness in the injected region.