Explore the vast range of titles available.

Tb-doped Mg 2 SiO 4 single crystals were grown by floating zone method, and photoluminescence (PL), scintillation, and thermally stimulated luminescence (TSL) properties were evaluated. In the PL and scintillation properties, Tb-doped Mg 2 SiO 4 single crystals showed emission peaks at 380, 420, 440, 460, 480, 495, 550, 590, and 630 nm, and the derived decay time constants were typical for the 4f-4f transitions of Tb 3+ ions. Regarding the dosimetric properties, TSL glow curves represented the main peaks at 50, 200, and 350 °C, and the TSL spectra exhibited the nine emission peaks due to Tb 3+ ions. Compared with a commercial TSL dosimeter (TORECK, MSO-S) equipped with powder-form Tb-doped Mg 2 SiO 4 , the integrated TSL intensity of the 0.4% Tb-doped single crystal was higher than that of MSO-S element in the dose range from 0.01 to 100 mGy air .

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi4Si3O12 (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi3+ ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd3+ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.

Eulytite-type Ba3RE(PO4)3 (RE = Y, La, and Lu) single crystals were synthesized by the floating zone method, and their scintillation properties were investigated. The powder X-ray diffraction measurement revealed that the single phase of Ba3RE(PO4)3 samples were successfully synthesized. The samples exhibited a luminescence peak due to self-trapped exciton at around 400 nm under vacuum ultraviolet and X-ray irradiation. The X-ray-induced scintillation decay time constants of the samples were several microseconds at room temperature. In the 241Am α-ray irradiated pulse height spectra, all the samples showed a clear full energy peak, and the absolute light yields of the Ba3Y(PO4)3, Ba3La(PO4)3, and Ba3Lu(PO4)3 single crystals were estimated to be 960, 1160, and 1220 ph/5.5 MeV-α, with a typical error of ±10%, respectively. The scintillation light yields of the Ba3RE(PO4)3 have been quantitatively clarified for the first time.

We evaluated the photoluminescence (PL), scintillation, and dosimetric properties of Ce–doped Mg 2 SiO 4 single crystals. As the PL and optically-stimulated luminescence (OSL) properties, the Ce–doped Mg 2 SiO 4 showed the emission from 5 d to 4 f transitions of Ce 3+ . In the scintillation and thermally-stimulated luminescence (TSL) properties, two emission peaks due to Ce 3+ and defect centers were observed. The Ce–doped Mg 2 SiO 4 showed OSL by stimulating at 600 nm and TSL by heating at 50, 160, 195, and 370 °C. In OSL, linearly proportional responses were confirmed from 10 mGy for the 0.5 and 1% Ce–doped samples to 100 mGy for the 0.1% Ce–doped sample. In TSL, the undoped and Ce–doped samples had the linearity response from 100 to 0.01 mGy, respectively.

Mg4Ta2O9 single crystals doped with 0.01, 0.1, and 1% Er were grown using the floating zone method, and their photoluminescence and scintillation properties were studied. X-ray diffraction analysis confirmed that all samples had a hexagonal structure of Mg4Ta2O9. The samples showed that the emission peak at 1550 nm was due to 4f−4f transitions of Er3+ ions, with quantum yields of 32.9, 46.6, and 18.0% for 0.01, 0.1, and 1% doping concentrations, respectively. All samples showed scintillation with a broad emission band at 350 nm due to charge transfer from Ta5+ to O2− ions and emission peak at 1550 nm due to 4f−4f transition of Er3+ ions. The dose rate response functions showed that the detection limit for all samples was 0.06 Gy/h for scintillation detector applications.

Eu 2 O 3 -doped oxychloride tellurite glasses were fabricated, and their luminescent characteristics were investigated for glass scintillators. Luminescent peaks originating from the transition between 4f energy levels of Eu 3+ were observed at 577, 592, 612, 652, and 701 nm under 530 nm light. These luminescent peaks were also observed when irradiated with X-ray, and the maximum intensity was observed at a Eu 2 O 3 concentration of 3.0%. Furthermore, scintillation decay times of about 0.64 ms were detected from the Eu 2 O 3 -doped oxychloride tellurite glasses. Moreover, the 3.0% Eu 2 O 3 -doped oxychloride tellurite glass exhibited the lowest afterglow level (177 ppm) that was lower than that of a Tl-doped CsI single crystal.

We prepared organic–inorganic layered perovskite-type compounds having a linear alkyl diamine (NH 3 C n H 2n NH 3 )PbCl 4 ( n  = 6: (1, 6-DHX)PbCl 4 , n  = 7: (1,7-DHP)PbCl 4 , n  = 8: (1,8-DIO)PbCl 4 , n  = 9: (1,9-DIN)PbCl 4 , n  = 10: (1,10-DID)PbCl 4 , n  = 11: (1,11-DIU)PbCl 4 ) and investigated their photoluminescence and scintillation characteristics. A broad band peak that should be attributed to self-trapped excitons (STEs) were observed at 555 nm ((1,6-DHX)PbCl 4 ), 520 nm ((1,7-DHP)PbCl 4 ), 525 nm ((1,8-DIO)PbCl 4 ), 525 nm ((1,9-DIN)PbCl 4 ), 550 nm ((1,10-DID)PbCl 4 ), and 530 nm ((1,11-DIU)PbCl 4 ) in scintillation. Also, they showed a scintillation decay time of 2.2 ns ((1,6-DHX)PbCl 4 ), 3.0 ns ((1,7-DHP)PbCl 4 ), 2.8 ns ((1,8-DIO)PbCl 4 ), 5.6 ns ((1,9-DIN)PbCl 4 ), 3.5 ns ((1,10-DID)PbCl 4 ), and 4.7 ns ((1,11-DIU)PbCl 4 ) due to the STE recombination. Further, the scintillation light yield of the (1,9-DIN)PbCl 4 crystal was the highest (1,200 photons/5.5 MeV- α ), and its value was higher than that of an undoped zinc oxide crystal.

Eulytite-type Ba RE(PO ) (RE = Y, La, and Lu) single crystals were synthesized by the floating zone method, and their scintillation properties were investigated. The powder X-ray diffraction measurement revealed that the single phase of Ba RE(PO ) samples were successfully synthesized. The samples exhibited a luminescence peak due to self-trapped exciton at around 400 nm under vacuum ultraviolet and X-ray irradiation. The X-ray-induced scintillation decay time constants of the samples were several microseconds at room temperature. In the Am α-ray irradiated pulse height spectra, all the samples showed a clear full energy peak, and the absolute light yields of the Ba Y(PO ) , Ba La(PO ) , and Ba Lu(PO ) single crystals were estimated to be 960, 1160, and 1220 ph/5.5 MeV-α, with a typical error of ±10%, respectively. The scintillation light yields of the Ba RE(PO ) have been quantitatively clarified for the first time.

Eulytite-type Ba[sub.3]RE(PO[sub.4])[sub.3] (RE = Y, La, and Lu) single crystals were synthesized by the floating zone method, and their scintillation properties were investigated. The powder X-ray diffraction measurement revealed that the single phase of Ba[sub.3]RE(PO[sub.4])[sub.3] samples were successfully synthesized. The samples exhibited a luminescence peak due to self-trapped exciton at around 400 nm under vacuum ultraviolet and X-ray irradiation. The X-ray-induced scintillation decay time constants of the samples were several microseconds at room temperature. In the [sup.241]Am α-ray irradiated pulse height spectra, all the samples showed a clear full energy peak, and the absolute light yields of the Ba[sub.3]Y(PO[sub.4])[sub.3], Ba[sub.3]La(PO[sub.4])[sub.3], and Ba[sub.3]Lu(PO[sub.4])[sub.3] single crystals were estimated to be 960, 1160, and 1220 ph/5.5 MeV-α, with a typical error of ±10%, respectively. The scintillation light yields of the Ba[sub.3]RE(PO[sub.4])[sub.3] have been quantitatively clarified for the first time.

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi Si O (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p-6s transitions of Bi ions. In addition, the Nd-doped samples had emission peaks due to the 4f-4f transitions of Nd ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.