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Conventional rigid electronic systems use a number of metallization layers to route all necessary connections to and from isolated surface mount devices using well-established printed circuit board technology. In contrast, present solutions to prepare stretchable electronic systems are typically confined to a single stretchable metallization layer. Crossovers and vertical interconnect accesses remain challenging; consequently, no reliable stretchable printed circuit board (SPCB) method has established. This article reports an industry compatible SPCB manufacturing method that enables multilayer crossovers and vertical interconnect accesses to interconnect isolated devices within an elastomeric matrix. As a demonstration, a stretchable (260%) active matrix with integrated electronic and optoelectronic surface mount devices is shown that can deform reversibly into various 3D shapes including hemispherical, conical or pyramid. To realize multilayer stretchable printed circuit boards (SPCBs), advancements in industrially-viable materials and processing methods are required. Here, the authors report multilayer SPCBs with electrical wiring capable of interconnecting isolated devices in different layers within an elastomeric matrix.

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS2 FETs. The dominant sources of hysteresis reported include charge trapping at the channel–dielectric interface and the adsorption/desorption of molecules. However, in MoS2 FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS2 FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current–voltage (I−V) and conductance–frequency (Gp/ω−f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS2 devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS2 FETs, particularly in TF FETs. The selection between FL and TF MoS2 devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.

This paper introduces a method for self-assembling and electrically connecting small (20-60 micrometer) semiconductor chiplets at predetermined locations on flexible substrates with high speed (62500 chips/45 s), accuracy (0.9 micrometer, 0.14°), and yield (> 98%). The process takes place at the triple interface between silicone oil, water, and a penetrating solder-patterned substrate. The assembly is driven by a stepwise reduction of interfacial free energy where chips are first collected and preoriented at an oil-water interface before they assemble on a solder-patterned substrate that is pulled through the interface. Patterned transfer occurs in a progressing linear front as the liquid layers recede. The process eliminates the dependency on gravity and sedimentation of prior methods, thereby extending the minimal chip size to the sub-100 micrometer scale. It provides a new route for the field of printable electronics to enable the integration of microscopic high performance inorganic semiconductors on foreign substrates with the freedom to choose target location, pitch, and integration density. As an example we demonstrate a fault-tolerant segmented flexible monocrystalline silicon solar cell, reducing the amount of Si that is used when compared to conventional rigid cells.

This communication presents fluidic self-assembly of Si-chip on a sequentially electroplated multilayer solder bump with tailored transformation imprinted melting points. The multilayer solder bump is a lead free ternary solder system, which provides a route to transform the melting point of interconnects for applications in solder directed fluidic self-assembly. The outermost metal layers form a low melting point Bi 33.7 In 66.3 solder shell (72 °C). This solder shell enables fluidic self-assembly and self-alignment of freely in water suspended Si-dies at relatively low temperature (75 °C) leading to well-ordered chip arrays. The reduction of the free surface energy of the shell-water interface provides the driving force for the self-assembly. The lowermost metal layer is a high melting point solder and acts as a core. After the self-assembly is complete, a short reflow causes the transformation of the core and the shell yielding a stable high melting point solder with adjustable melting points. The chosen ternary solder system enables the realization of interconnects with melting points in the range of 112 °C to 206 °C.

This study investigates the chemical vapour deposition (CVD) of molybdenum disulfide (MoS2) on SiO2, examining the formation of various grains and grain boundaries (GBs) in single- to few-layer MoS2. The material, optical, and electronic properties of the resulting MoS2 were evaluated through Raman and photoluminescence (PL) spectroscopy. Notably, both Raman and photoluminescence intensities were quenched at the GBs. Moreover, a consistent redshift in the photoluminescence peak positions at the grain boundaries indicating local strain or defect-induced modifications. Electrical characterization of lateral 2-terminal backgated devices on individual grains exhibited lower carrier mobility than those fabricated on continuous few-layers MoS2, with the highest measured mobility reaching 18.6 cm2 V−1 s−1. Additionally, the back-gated field effect transistors (FET) on individual grains and continuous fewlayered showed pronounced clockwise hysteresis in their transfer characteristics, revealing the distinctive contribution of MoS2 surface and MoS2/SiO2 interface defects and their associated traps-as primary sources of hysteresis.

This study demonstrates the fabrication of self-aligning three-dimensional (3D) platinum bridges for ammonia gas sensing using gas-phase electrodeposition. This deposition scheme can guide charged nanoparticles to predetermined locations on a surface with sub-micrometer resolution. A shutter-free deposition is possible, preventing the use of additional steps for lift-off and improving material yield. This method uses a spark discharge-based platinum nanoparticle source in combination with sequentially biased surface electrodes and charged photoresist patterns on a glass substrate. In this way, the parallel growth of multiple sensing nodes, in this case 3D self-aligning nanoparticle-based bridges, is accomplished. An array containing 360 locally grown bridges made out of 5 nm platinum nanoparticles is fabricated. The high surface-to-volume ratio of the 3D bridge morphology enables fast response and room temperature operated sensing capabilities. The bridges are preconditioned for ~ 24 h in nitrogen gas before being used for performance testing, ensuring drift-free sensor performance. In this study, platinum bridges are demonstrated to detect ammonia (NH 3 ) with concentrations between 1400 and 100 ppm. The sensing mechanism, response times, cross-sensitivity, selectivity, and sensor stability are discussed. The device showed a sensor response of ~ 4% at 100 ppm NH 3 with a 70% response time of 8 min at room temperature.

The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process. The distinctive signals of MoS2 were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS2 nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS2 structures and their growth mechanisms. The strain energy produced by the compression between MoS2 islands is assumed to primarily drive the formation of vertical MoS2 nanosheets. In addition, vertical MoS2 structures that emerge from micro fissures (cracks) on individual MoS2 islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm2 V−1 s−1 and an estimated carrier concentration of 4.5 × 1012 cm−2. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified.

Gallium oxide was grown on silicon carbide substrates using a corona discharge assisted vapor phase epitaxy process and gold catalyst. It is shown that by implementing the corona discharge the morphology of the gallium oxide can be transformed. The excitation of the gas phase and the generation of excited species directly influence the growth morphology suppressing nanowire growth and supporting the transformation into heteroepitaxial growth.

We demonstrate the patterned assembly of integrated semiconductor devices onto planar, flexible, and curved substrates on the basis of capillary interactions involving liquid solder. The substrates presented patterned, solder-coated areas that acted both as receptors for the components of the device during its assembly and as electrical connections during its operation. The components were suspended in water and agitated gently. Minimization of the free energy of the solder-water interface provided the driving force for the assembly. One hundred and thirteen GaAIAs light-emitting diodes with a chip size of 280 micrometers were fabricated into a prototype cylindrical display. It was also possible to assemble 1500 silicon cubes, on an area of 5 square centimeters, in less than 3 minutes, with a defect rate of ∼2%.

Various nanostructured sensor designs currently aim to achieve or claim single molecular detection by a reduction of the active sensor size. However, a reduction of the sensor size has the negative effect of reducing the capture probability considering the diffusion-based analyte transport commonly used. Here we introduce and apply a localized programmable electrodynamic precipitation concept as an alternative to diffusion. The process provides higher collection rates of airborne species and detection at lower concentration. As an example, we compare an identical nanostructured surfaced-enhanced Raman spectroscopy sensor with and without localized delivery and find that the sensitivity and detection time is improved by at least two orders of magnitudes. Localized collection in an active-matrix array-like fashion is also tested, yielding hybrid molecular arrays on a single chip over a broad range of molecular weights, including small benzenethiol (110.18 Da) and 4-fluorobenzenethiol (128.17 Da), or large macromolecules such as anti-mouse IgG (~150 kDa). Effective collection of molecules on a small sensing area is not possible based on diffusion alone and the employment of a directed force is required. The authors report a localized electrodynamic precipitation concept to collect, spot and detect airborne species in an active-matrix array-like fashion.