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Bio – molecules detection and their quantification with a high precision is essential in modern era of medical diagnostics. In this context, the memristor device which can change its resistance state is a promising technique to sense the bio - molecules. In this work, detection of the Bovine Serum Albumin (BSA) protein using resistive switching memristors based on TiO 2 and TiO 2  + graphene oxide (GO) is explored. The sensitivity of BSA detection is found to be 4 mg/mL. Both the devices show an excellent bipolar resistive switching with an on/off ratio of 73 and 100 respectively, which essentially demonstrates that the device with GO, distinguishes the resistance states with a high precision. The enhanced performance in the GO inserted device (~ 650 cycles) is attributed to the prevention of multi-dimensional and random growth of conductive paths.

We report on the magnetic field control of a bipolar resistive switching in Ag/TiO 2 /FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between ‘off’ and ‘on’ states is reproducible, reversible and controllable. Magnetic field control of ‘on’ and ‘off’ states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.

We report measurements on magnetization reversal in the Fe8 molecular magnet using fast pulsed magnetic fields of 1.5 kT s−1 and in the temperature range of 0.6-4.1 K. We observe and analyze the temperature dependence of the reversal process, which involves in some cases several resonances. Our experiments allow observation of resonant quantum tunneling of magnetization up to a temperature of ∼4 K. We also observe shifts in the maxima of the relaxation within each resonance field with temperature that suggest the emergence of a thermal instability-a combination of spin reversal and self-heating that may result in a magnetic deflagration process. The results are mainly understood in the framework of thermally-activated quantum tunneling transitions in combination with emergence of a thermal instability.

The remote control of the electrical conductance through nanosized junctions at room temperature will play an important role in future nano-electromechanical systems and electronic devices. This can be achieved by exploiting the magnetostriction effects of ferromagnetic materials. Here we report on the electrical conductance of magnetic nanocontacts obtained from wires of the giant magnetostrictive compound Tb 0.3 Dy 0.7 Fe 1.95 as an active element in a mechanically controlled break-junction device. The nanocontacts are reproducibly switched at room temperature between “open” (zero conductance) and “closed” (nonzero conductance) states by variation of a magnetic field applied perpendicularly to the long wire axis. Conductance measurements in a magnetic field oriented parallel to the long wire axis exhibit a different behaviour where the conductance switches between both states only in a limited field range close to the coercive field. Investigating the conductance in the regime of electron tunneling by mechanical or magnetostrictive control of the electrode separation enables an estimation of the magnetostriction. The present results pave the way to utilize the material in devices based on nano-electromechanical systems operating at room temperature.

We report on the evidenced giant vertical magnetization shift in Ag/NiO/Fe/FTO bilayers when electric field E z (electric field applied in z direction) and magnetic field H z (magnetic field applied in z direction) are parallel to each other. Calculated vertical magnetization shift ( M E ) is determined to be 1168 emu/cc (259%) for applied voltage of +1.5 V, while it is −1142 emu/cc (252%) for –1.5 V respectively. Such a huge change is attributed to the pinning of spins at the interface through resistive switching phenomena that is governed through oxygen ion migration at the interface. The quantitative correlation between interfacial anisotropy energy and the applied electric field is established. Determined coefficient pertinent to electric-field-control of magnetic anisotropy is found to be 1.19 × 10 −8 erg/V cm when E z and H z are parallel to each other. A reversible and reproducible magnetization switching is demonstrated by applying +1.5 V and −1.5 V repeatedly, which demonstrates robustness of the magnetization switching in fabricated device. Indeed, intermediate magnetization states are availed through voltage, which may be of great interest for the multi-bit data storage and energy efficient spintronic devices.

Bio - molecules detection and their quantification with a high precision is essential in modern era of medical diagnostics. In this context, the memristor device which can change its resistance state is a promising technique to sense the bio - molecules. In this work, detection of the Bovine Serum Albumin (BSA) protein using resistive switching memristors based on TiO and TiO  + graphene oxide (GO) is explored. The sensitivity of BSA detection is found to be 4 mg/mL. Both the devices show an excellent bipolar resistive switching with an on/off ratio of 73 and 100 respectively, which essentially demonstrates that the device with GO, distinguishes the resistance states with a high precision. The enhanced performance in the GO inserted device (~ 650 cycles) is attributed to the prevention of multi-dimensional and random growth of conductive paths.

We report on the increase in the spin reorientation temperature in HoFe0.5Cr0.5O3 compound by isovalent substitution Cr3+ at the Fe-site and the magnetocapacitance in the HoFeO3 compound. Spin reorientation transition is evident around 50 K and 150 K for the x = 0 and x = 0.5 compounds respectively. The increase in the spin reorientation transition temperature in case of x = 0.5 compound can be attributed to the domination of the Ho3+ to Fe3+ interaction over the Fe3+ to Fe3+ interaction. Decrease in Neel temperature from 643 K (x = 0) to 273 K (x = 0.5) can be ascribed to the decrease in the interaction between antiferromagnetically aligned Fe3+ moments as a result of the dilution of the Fe3+ moments with the Cr3+ addition. From the magnetization M vs magnetic field H variation it is evident that the coercivity, HC decreases for x = 0.5 compound, hinting the magnetic softening of the HoFeO3 compound. Observed magnetocapacitance could be due to lossy dielectric mechanism in the present compound. Indeed, present results would be helpful in understanding the physics behind rare- earth orthoferrites.

We report on the magnetic field control of a bipolar resistive switching in Ag/TiO /FTO based resistive random access memory device through I-V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between 'off' and 'on' states is reproducible, reversible and controllable. Magnetic field control of 'on' and 'off' states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.

We report measurements on magnetization reversal in the Fe8 molecular magnet using fast pulsed magnetic fields of 1.5 kT s-1 and in the temperature range of 0.6-4.1 K. We observe and analyze the temperature dependence of the reversal process, which involves in some cases several resonances. Our experiments allow observation of resonant quantum tunneling of magnetization up to a temperature of ~4 K. We also observe shifts in the maxima of the relaxation within each resonance field with temperature that suggest the emergence of a thermal instability-a combination of spin reversal and self-heating that may result in a magnetic deflagration process. The results are mainly understood in the framework of thermally-activated quantum tunneling transitions in combination with emergence of a thermal instability.