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The construction of Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL), a 0.1-nm hard X-ray free-electron laser (FEL) facility based on a 10-GeV S-band linear accelerator (LINAC), is achieved in Pohang, Korea by the end of 2016. The construction of the 1.11 km-long building was completed by the end of 2014, and the installation of the 10-GeV LINAC and undulators started in January 2015. The installation of the 10-GeV LINAC, together with the undulators and beamlines, was completed by the end of 2015. The commissioning began in April 2016, and the first lasing of the hard X-ray FEL line was achieved on 14 June 2016. The progress of the PAL-XFEL construction and its commission are reported here.

The hard X-ray free-electron laser at the Pohang Accelerator Laboratory (PAL-XFEL) in the Republic of Korea achieved saturation of a 0.144 nm free-electron laser beam on 27 November 2016, making it the third hard X-ray free-electron laser in the world, following the demonstrations of the Linac Coherent Light Source (LCLS) and the SPring-8 Angstrom Compact Free Electron Laser (SACLA). The use of electron-beam-based alignment incorporating undulator radiation spectrum analysis has allowed reliable operation of PAL-XFEL with unprecedented temporal stability and dispersion-free orbits. In particular, a timing jitter of just 20 fs for the free-electron laser photon beam is consistently achieved due to the use of a state-of-the-art design of the electron linear accelerator and electron-beam-based alignment. The low timing jitter of the electron beam makes it possible to observe Bi(111) phonon dynamics without the need for timing-jitter correction, indicating that PAL-XFEL will be an extremely useful tool for hard X-ray time-resolved experiments. The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) in South Korea has now entered operation with a timing jitter of just 20 fs.

Graphene has shown great application opportunities in future nanoelectronic devices due to its outstanding electronic properties. Moreover, its impressive optical properties have been attracting the interest of researchers, and, recently, the photovoltaic effects of a heterojunction structure embedded with few layer graphene (FLG) have been demonstrated. Here, we report the photovoltaic response of graphene-semiconductor junctions and the controlled open-circuit voltage (Voc) with varying numbers of graphene layers. After unavoidably adsorbed contaminants were removed from the FLGs, by means of in situ annealing, prepared by layer-by-layer transfer of the chemically grown graphene layer, the work functions of FLGs showed a sequential increase as the graphene layers increase, despite of random interlayer-stacking, resulting in the modulation of photovoltaic behaviors of FLGs/Si interfaces. The surface photovoltaic effects observed here show an electronic realignment in the depth direction in the FLG heterojunction systems, indicating future potential toward solar devices utilizing the excellent transparency and flexibility of FLG.