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The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in engineering two-dimensional (2D) magnetism via defects, edges, adatoms, and magnetic proximity. However, intrinsic 2D ferromagnetism remained elusive until recent discovery of out-of-plane magneto-optical response in Cr-based layers, stimulating the search for 2D magnets with tunable and diverse properties. Here we employ a bottom-up approach to produce layered structures of silicene (a Si counterpart of graphene) functionalized by rare-earth atoms, ranging from the bulk down to one monolayer. We track the evolution from the antiferromagnetism of the bulk to intrinsic 2D in-plane ferromagnetism of ultrathin layers, with its characteristic dependence of the transition temperature on low magnetic fields. The emerging ferromagnetism manifests itself in the electron transport. The discovery of a class of robust 2D magnets, compatible with the mature Si technology, is instrumental for engineering new devices and understanding spin phenomena. Exploring the magnetism in 2D materials paves the way to low-dimensional spintronics. Here the authors report evolution of bulk antiferromagnetism to intrinsic 2D in-plane ferromagnetism in layered structures of silicene functionalized by rare-earth atoms as they are scaled down to one monolayer.

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf0.5Zr0.5O2 (HZO) film. The mechanism of speed degradation is related to the generation of charged defects in the film which accompany the formation of the interfacial dielectric layer during oxidization of the electrode. Such defects are pinning centers that prevent domain propagation upon polarization switching. To clarify this issue, we fabricate two types of similar W/HZO/TiN capacitor structures, differing only in the thickness of the electrode interlayer, and compare their ferroelectric (including local ferroelectric), dielectric, structural (including microstructural), chemical, and morphological properties, which are comprehensively investigated using several advanced techniques, in particular, hard X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and electron beam induced current technique.

Silicene, a Si-based analogue of graphene, is predicted to exhibit topological electronic phases with exotic properties capable to revolutionize electronics. In particular, the silicene structure is highly advantageous for spintronics. However, lack of synthetic routes to free-standing and magnetically functionalized silicene compounds prevents experimental corroboration of the predictions. Here we synthesize EuSi 2 , multilayer silicene intercalated with inherently magnetic Eu atoms, on SrSi 2 /Si(001) templates. The resulting films are formed by crystallites of two mutually orthogonal orientations. The structure is firmly established with electron diffraction, X-ray diffraction and electron microscopy. The compound EuSi 2 exhibits non-trivial magnetic and transport properties. The data are compared with those for EuSi 2 films grown on SrSi 2 /Si(111) templates.

We present an extensive study of the luminescence characteristics of Mn impurity ions in a YAl3(BO3)4:Mn crystal, in combination with X-ray fluorescence analysis and determination of the valence state of Mn by XANES (X-ray absorption near-edge structure) spectroscopy. The valences of manganese Mn2+(d5) and Mn3+(d4) were determined by the XANES and high-resolution optical spectroscopy methods shown to be complementary. We observe the R1 and R2 luminescence and absorption lines characteristic of the 2E ↔ 4A2 transitions in d3 ions (such as Mn4+ and Cr3+) and show that they arise due to uncontrolled admixture of Cr3+ ions. A broad luminescent band in the green part of the spectrum is attributed to transitions in Mn2+. Narrow zero-phonon infrared luminescence lines near 1060 nm (9400 cm−1) and 760 nm (13,160 cm−1) are associated with spin-forbidden transitions in Mn3+: 1T2 → 3T1 (between excited triplets) and 1T2 → 5E (to the ground state). Spin-allowed 5T2 → 5E Mn3+ transitions show up as a broad band in the orange region of the spectrum. Using the data of optical spectroscopy and Tanabe–Sugano diagrams we estimated the crystal-field parameter Dq and Racah parameter B for Mn3+ in YAB:Mn as Dq = 1785 cm−1 and B = 800 cm−1. Our work can serve as a basis for further study of YAB:Mn for the purposes of luminescent thermometry, as well as other applications.

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf[sub.0.5] Zr[sub.0.5] O[sub.2] (HZO) film. The mechanism of speed degradation is related to the generation of charged defects in the film which accompany the formation of the interfacial dielectric layer during oxidization of the electrode. Such defects are pinning centers that prevent domain propagation upon polarization switching. To clarify this issue, we fabricate two types of similar W/HZO/TiN capacitor structures, differing only in the thickness of the electrode interlayer, and compare their ferroelectric (including local ferroelectric), dielectric, structural (including microstructural), chemical, and morphological properties, which are comprehensively investigated using several advanced techniques, in particular, hard X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and electron beam induced current technique.

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf Zr O (HZO) film. The mechanism of speed degradation is related to the generation of charged defects in the film which accompany the formation of the interfacial dielectric layer during oxidization of the electrode. Such defects are pinning centers that prevent domain propagation upon polarization switching. To clarify this issue, we fabricate two types of similar W/HZO/TiN capacitor structures, differing only in the thickness of the electrode interlayer, and compare their ferroelectric (including local ferroelectric), dielectric, structural (including microstructural), chemical, and morphological properties, which are comprehensively investigated using several advanced techniques, in particular, hard X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and electron beam induced current technique.

The article substantiates the need to assess changes in world prices for natural gas in conditions of volatility in world oil prices. The study is aimed at making forecasts of changes in world prices for natural gas in Continental Europe based on historical trend analysis.

Altermagnets have emerged as a class of materials combining certain ferromagnetic properties with zero net magnetization. This combination is highly promising for spintronics, especially if a material can be brought to a nanoscale size. However, experimental studies of the 2D limit of altermagnets and evolution of their properties with thickness are lacking. Here, we study epitaxial films on silicon of the Weyl altermagnet GdAlSi ranging from more than a hundred unit cells to a single unit cell. The films are synthesized by molecular beam epitaxy and, expectedly, do not show any discernible net magnetic moments. Electron transport studies reveal a remarkable transformation of the electron state with the film thickness. Thick films exhibit negative longitudinal magnetoresistance associated with the chiral anomaly but do not demonstrate altermagnetic properties in electron transport due to symmetry restrictions. In ultrathin films, a spontaneous anomalous Hall effect manifests itself, indicating a non-relativistic spin splitting in the electronic structure. The transformation is associated with crystal symmetry breaking accompanying the 3D-to-2D crossover. The work highlights the role of dimensionality in altermagnetism and provides a platform for studies of altermagnets aiming at ultra-compact spintronics.

2D magnets have emerged as a class of materials highly promising for studies of quantum phenomena and applications in ultra-compact spintronics. Current research aims at design of 2D magnets with particular functional properties. A formidable challenge is to produce metallic monolayers: the material landscape of layered magnetic systems is strongly dominated by insulators; rare metallic magnets, such as Fe3GeTe2, become insulating as they approach the monolayer limit. Here, electron transport measurements demonstrate that the recently discovered 2D magnet GdAlSi - graphene-like AlSi layers coupled to layers of Gd atoms - remains metallic down to a single monolayer. Band structure analysis indicates the material to be an electride, which may stabilize the metallic state. Remarkably, the sheet conductance of 2D GdAlSi is proportional to the number of monolayers - a manifestation of scalable conductivity. The GdAlSi layers are epitaxially integrated with silicon, facilitating applications in electronics.

Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of such compounds is rather narrow, prompting the search for new members. Graphitization - stabilization of layered graphitic structures in the 2D limit - is being discussed for cubic materials. We suggest the phenomenon to extend beyond cubic structures; it can be employed as a viable route to a variety of layered materials. Here, the idea of graphitization is put into practice to produce a new layered magnet, GdAlSi. The honeycomb material, based on graphene-like layers AlSi, is studied both experimentally and theoretically. Epitaxial films of GdAlSi are synthesized on silicon; the critical thickness for the stability of the layered polymorph is around 20 monolayers. Notably, the layered polymorph of GdAlSi demonstrates ferromagnetism stemming from the open 4f-shells of Gd, in contrast to the non-layered, tetragonal polymorph. The ferromagnetism is further supported by electron transport measurements revealing negative magnetoresistance and the anomalous Hall effect. The results show that graphitization can be a powerful tool in the design of functional layered materials.