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Displays based on inorganic light-emitting diodes (LED) are considered as the most promising one among the display technologies for the next-generation. The chip for LED display bears similar features to those currently in use for general lighting, but it size is shrunk to below 200 microns. Thus, the advantages of high efficiency and long life span of conventional LED chips are inherited by miniaturized ones. As the size gets smaller, the resolution enhances, but at the expense of elevating the complexity of fabrication. In this review, we introduce two sorts of inorganic LED displays, namely relatively large and small varieties. The mini-LEDs with chip sizes ranging from 100 to 200 μm have already been commercialized for backlight sources in consumer electronics applications. The realized local diming can greatly improve the contrast ratio at relatively low energy consumptions. The micro-LEDs with chip size less than 100 μm, still remain in the laboratory. The full-color solution, one of the key technologies along with its three main components, red, green, and blue chips, as well color conversion, and optical lens synthesis, are introduced in detail. Moreover, this review provides an account for contemporary technologies as well as a clear view of inorganic and miniaturized LED displays for the display community.

Micro-light-emitting diodes (μ-LEDs) are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications, such as mobile phones, wearable watches, virtual/augmented reality, micro-projectors and ultrahigh-definition TVs. However, as the LED chip size shrinks to below 20 μm, conventional phosphor colour conversion cannot present sufficient luminance and yield to support high-resolution displays due to the low absorption cross-section. The emergence of quantum dot (QD) materials is expected to fill this gap due to their remarkable photoluminescence, narrow bandwidth emission, colour tuneability, high quantum yield and nanoscale size, providing a powerful full-colour solution for μ-LED displays. Here, we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology, including μ-LED design and fabrication, large-scale μ-LED transfer and QD full-colour strategy. Outlooks on QD stability, patterning and deposition and challenges of μ-LED displays are also provided. Finally, we discuss the advanced applications of QD-based μ-LED displays, showing the bright future of this technology.Micro-LEDs: A fine display by quantum dotsMicrometre-sized light-emitting diodes (LEDs) based on quantum dots (QDs) will propel the next generation of display technologies, a review by leading researchers shows. Conventional LED designs, with phosphor coatings that convert light to different colours, are difficult to make smaller than 20 micrometres. Jr-Hau He at City University of Hong Kong and co-workers explain how this problem can be tackled using QDs, tiny particles whose optical properties can be tuned by varying their size, providing brighter and more precise colours. Ultra-high-resolution displays based on phospholuminescent QD-LEDs are now being released to the market thanks to finely-controlled methods for synthesising QDs and depositing them onto films. Further research should focus on the best ways to stabilise and protect QD films within LEDs, and to continue developing electroluminescent QD-LEDs, which could potentially outperform their phospholuminescent cousins.

Visible Light Communication (VLC) technology is an emerging technology using visible light modulation that, in the modern world, will mainly facilitate high-speed internet connectivity. VLC provides tremendous advantages compared to conventional radio frequency, such as a higher transmission rate, high bandwidth, low-power consumption, no health hazards, less interference, etc., which make it more prominent in recent days. Due to their outstanding features, including low cost, low power consumption, etc., µ-light-emitting diodes (LEDs) have gained considerable attention for VLC implementation, but mostly for the ability to be used for lighting as well as communications. In this review paper, we will focus mainly on recent developments in VLC applications and various factors affecting the modulation bandwidth of VLC devices. Numerous factors, such as quantum confined stark effect (QCSE), carrier lifetime, carrier recombination time, crystal orientation, etc. affect the modulation bandwidth of LEDs, and more information will be discussed in the following sections. This paper will focus on VLC applications based on LEDs but mainly on semipolar μ-LEDs and μ-LED-based arrays with high bandwidths. Another important application of VLC is underwater optical wireless communication (UOWC), which has drawn a huge interest in marine exploration and underwater connectivity, but still faces some challenges because visible light is being used. In addition, this paper will focus on how the current VLC system modulation bandwidth can be enhanced. Many methods have been introduced, such as decreasing the active layer thickness or effective active area or using doping, but the bandwidth is restricted by the recombination time when the system configuration reaches its limit. Therefore, it is important to find alternative ways such as optimizing the system, using the blue filter or using the equalization technology, which will be addressed later. Overall, this review paper provides a brief overview of the VLC-based system performance and some of its potential prospects.

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

Visible light communication (VLC) is an advanced, highly developed optical wireless communication (OWC) technology that can simultaneously provide lighting and high-speed wireless data transmission. A VLC system has several key advantages: ultra-high data rate, secure communication channels, and a lack of interference from electromagnetic (EM) waves, which enable a wide range of applications. Light-emitting diodes (LEDs) have been considered the optimal choice for VLC systems since they can provide excellent illumination performance. However, the quantum confinement Stark effect (QCSE), crystal orientation, carrier lifetime, and recombination factor will influence the modulation bandwidth, and the transmission performance is severely limited. To solve the insufficient modulation bandwidth, micro-LEDs (μ-LEDs) and laser diodes (LDs) are considered as new ideal light sources. Additionally, the development of modulation technology has dramatically increased the transmission capacity of the system. The performance of the VLC system is briefly discussed in this review article, as well as some of its prospective applications in the realms of the industrial Internet of Things (IoT), vehicle communications, and underwater wireless network applications.

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

Mesoporous oxides attract a great deal of interest in many fields, including energy, catalysis and separation, because of their tunable structural properties such as surface area, pore volume and size, and nanocrystalline walls. Here we report thermally stable, crystalline, thermally controlled monomodal pore size mesoporous materials. Generation of such materials involves the use of inverse micelles, elimination of solvent effects, minimizing the effect of water content and controlling the condensation of inorganic frameworks by NO x decomposition. Nanosize particles are formed in inverse micelles and are randomly packed to a mesoporous structure. The mesopores are created by interconnected intraparticle voids and can be tuned from 1.2 to 25 nm by controlling the nanoparticle size. Such phenomena allow the preparation of multiple phases of the same metal oxide and syntheses of materials having compositions throughout much of the periodic table, with different structures and thermal stabilities as high as 800 °C. Mesoporous oxides are important materials with a range of tunable structural properties. Here, the authors report a general, inverse micelle-based method to produce crystalline mesoporous materials with monomodal pore sizes from a range of elements.

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.