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The continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) channels. This dual-channel mechanism enhances carrier confinement and mobility, offering a pivotal pathway toward high-performance GaN-based electronics. This simulation study systematically examines key parameters to optimize device configurations: Mg 2+ doping (0.05 to 50 × 10 19 cm − 3 ), contact metal work function (4.0 to 6.3 eV), AlGaN layer thickness (4 to 25 nm), and Al mole fraction (0.1 to 0.45) in relation to the performance of p-GaN source layer n-GaN/AlGaN/GaN double heterostructure FETs. Extensive analyses reveal that a GaN pFET with a 5 nm p-GaN layer doped with 1 × 10 19 cm − 3 Mg 2+ and a 10 nm AlGaN layer with an Al mole fraction of 0.2, demonstrates superior performance metrics. Compared to state-of-the-art technologies, this specific device configuration achieves optimal threshold voltage (~ |4| V) control, high I ON /I OFF ratios (0.39 × 10 12 ), and minimized leakage current, essential for reliable high-performance operations. Additionally, the study highlights the critical impact of the contact metal work function, with a work function of 5.15 eV significantly reducing contact resistivity and minimizing leakage current, enhancing device efficiency. These findings highlight that precise control over doping, material thickness, and composition is essential for optimizing GaN pFET performance and reliability for next-generation electronic applications.

This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key mechanisms contributing to low-resistance contacts. Atomic force microscopy inspections showed that the surface roughness depends on the doping levels and cap layer thickness, with higher doping improving the surface quality. Notably, increasing the doping concentration in the p++-InGaN cap layer significantly reduced the specific contact resistivity to 6.4 ± 0.8 × 10−6 Ω·cm2, primarily through enhanced tunneling. Current–voltage (I–V) characteristics indicated that the cap layer’s surface properties and strain-induced polarization effects influenced the Schottky barrier height and reverse current. The reduction in barrier height by approximately 0.42 eV in the p++-InGaN layer enhanced hole tunneling, further lowering the contact resistivity. Additionally, polarization-induced free charges at the metal–semiconductor interface reduced band bending, thereby enhancing carrier transport. A transition in current conduction mechanisms was also observed, shifting from recombination tunneling to space-charge-limited conduction across different voltage ranges. This research underscores the importance of doping, cap layer thickness, and polarization effects in achieving ultra-low contact resistivity, offering valuable insights for improving the performance of p-GaN-based power devices.