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The fabrication and characterization of back-illuminated solar blind AlGaN metal-semiconductor-metal photodetectors is reported. The dark current of 40x40 mu m devices is lower than the instrument measurement limitation of 20 fA for a bias < 100 V. The external quantum efficiency is as high as 48% and the spectral response shows a sharp band edge drop-off at approximately 280 nm.

AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60x60 mu m super(2) exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range beta identical with 4-10 and a common-emitter offset voltage V sub(CEoff) identical with 4 V at room temperature.