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Introducing other elements into gallium oxide materials to modify their properties is a hot topic today. This paper attempts to introduce Bi element to prepare (Bi x Ga 1-x ) 2 O 3 alloy semiconductor thin film by radio frequency co-sputtering, so as to achieve precise and effective tuning of its band gap. The sputtering power of Ga 2 O 3 target remains constant at 80 W. The content of Bi element in the material is adjusted by varying the sputtering power of the Bi 2 O 3 target. Samples with different Bi doping concentrations were obtained after annealing at 800 °C for 2 h. Fortunately, (Bi x Ga 1-x ) 2 O 3 semiconductor alloy films were successfully prepared by radio frequency co-sputtering, and the optical energy gap could be adjusted approximately linearly in the range of 5.14 to 5.27 eV by varying the Bi content. X-ray diffraction and scanning electron microscope results show that a phase transition occurs in the material when the sputtering power of Bi 2 O 3 is 40 W. The results of Urbach energy and film transmittance indicate that moderate Bi doping can reduce the disorder of the material structure and improve the transmittance of the film. However, excessive Bi doping introduces more defects, increasing the scattering and absorption of the defects, ultimately leading to a reduction in film transmittance. These findings have propelled research in the field of gallium oxide doping and its band gap modulation.