Explore the vast range of titles available.

Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that benefits from the boosted charge trapping under ambient conditions. A thin InO x layer is confirmed under the InSe channel, which can serve as an effective charge trapping layer for information storage. The dynamic characteristic measurement is further performed to reveal the corresponding uniform charge trapping and releasing process, which coincides with its surface-effect-governed carrier fluctuations. As a result, the oxide-decorated InSe device exhibits nonvolatile memory characteristics with flexible programming/erasing operations. Furthermore, an InSe-based artificial synapse is implemented to emulate the essential synaptic functions. The pattern recognition capability of the designed artificial neural network is believed to provide an excellent paradigm for ultra-sensitive van der Waals materials to develop electric-modulated neuromorphic computation architectures. Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.

Reconfigurable field-effect transistors (FETs) combine unipolar n- and p-type characteristics in a single programmable device and could be used to reduce the complexity of electronic devices. However, current reconfigurable FETs require a constant voltage supply to achieve polarity conversion, leading to high power consumption. Here we report a reconfigurable FET that is based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride (hBN/ReSe 2 /hBN) heterostructure and has a nonvolatile and tunable polarity. A photoinduced trapping mechanism is used to drive photoexcited holes or electrons into the interface between the hBN and the silicon dioxide substrate. The reconfigurable FET can switch between a transistor and memory mode, and several FETs can be used to create inverter, AND, OR, NAND, NOR, XOR and XNOR circuits. We also show that, when in memory-mode operation, the devices can be used to emulate synaptic functions for neuromorphic computing systems. A reconfigurable field-effect transistor based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride heterostructure can offer nonvolatile control of its channel conductivity via photoinduced trapping of electrons or holes at the bottom dielectric interface.

Van der Waals (vdW) heterostructures—in which layered materials are purposely selected to assemble with each other—allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet‐of‐things applications. Here, an O2‐ultrasensitive MoTe2 material and an O2‐insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. The charge‐polarity control (i.e., doping and de‐doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2/SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti‐ambipolar transfer characteristics. Based on the dynamic control of the charge‐polarity properties, an inverter, output polarity controllable amplifier, p‐n diode, and ternary‐state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials. Although various van der Waals stacking systems for preparing multifunctional devices are reported, their complexity in fabrication and/or inflexibility in reversible operation limit the possibility of multifunctional integrations and the requirement of the fast‐growing internet of things paradigm. Here, a simple and effective rapid temperature annealing strategy for reversibly controlling and optimizing the electronic properties of MoTe2‐based heterostructure electronics is proposed/realized.