Explore the vast range of titles available.

Magnetic Weyl semimetals with broken time-reversal symmetry are expected to generate strong intrinsic anomalous Hall effects, due to their large Berry curvature. Here, we report a magnetic Weyl semimetal candidate, Co3Sn2S2, with a quasi-two-dimensional crystal structure consisting of stacked kagome lattices. This lattice provides an excellent platform for hosting exotic topological quantum states. We observe a negative magnetoresistance that is consistent with the chiral anomaly expected from the presence of Weyl fermions close to the Fermi level. The anomalous Hall conductivity is robust against both increased temperature and charge conductivity, which corroborates the intrinsic Berry-curvature mechanism in momentum space. Owing to the low carrier density in this material and the considerably enhanced Berry curvature from its band structure, the anomalous Hall conductivity and the anomalous Hall angle simultaneously reach 1,130 Ω−1 cm−1 and 20%, respectively, an order of magnitude larger than typical magnetic systems. Combining the kagome-lattice structure and the long-range out-of-plane ferromagnetic order of Co3Sn2S2, we expect that this material is an excellent candidate for observation of the quantum anomalous Hall state in the two-dimensional limit.

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe 5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe 5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe 5 . Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe 5 . Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe 5 . In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe 5 samples. Our observations indicate that ZrTe 5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced. To understand the anomalous electronic transport properties of ZrTe 5 remains an elusive puzzle. Here, Zhang et al . report direct electronic evidence to the origin of the resistivity anomaly and temperature induced Lifshitz transition in ZrTe 5 , indicating it being a weak topological insulator.

The mechanism of high-temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure plays an essential role in dictating superconductivity. Recent revelation of distinct electronic structure and high-temperature superconductivity in the single-layer FeSe/SrTiO 3 films provides key information on the role of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high-resolution angle-resolved photoemission measurements on the electronic structure and superconducting gap of an FeSe-based superconductor, (Li 0.84 Fe 0.16 )OHFe 0.98 Se, with a T c at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviours to that of the superconducting single-layer FeSe/SrTiO 3 films in terms of Fermi surface topology, band structure and the gap symmetry. These observations provide new insights in understanding high-temperature superconductivity in the single-layer FeSe/SrTiO 3 films and the mechanism of superconductivity in the bulk iron-based superconductors. The mechanism of high-temperature superconductivity in the iron-based materials remains not fully understood. Here, the authors report on ARPES measurements on an FeSe-based bulk superconductor, whose electronic properties are found to be similar to those of single-layer FeSe/STO films.

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayerWSe2that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one’s expectation, moiré bands were observed only atΓvalley but notKvalley inμ-ARPES measurements, and correspondingly, our STM measurements clearly identified the real-space honeycomb- and kagome-shaped charge distributions at the moiré length scale associated with theΓ-valley moiré bands. These results not only reveal the unusual valley-dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight theΓ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and kagome lattices at different energy scales.

The iron-based superconductors are characterized by multiple-orbital physics where all the five Fe3dorbitals get involved. The multiple-orbital nature gives rise to various novel phenomena like orbital-selective Mott transition, nematicity, and orbital fluctuation that provide a new route for realizing superconductivity. The complexity of multiple-orbital physics also requires us to disentangle the relationship between orbital, spin, and nematicity, and to identify dominant orbital ingredients that dictate superconductivity. The bulk FeSe superconductor provides an ideal platform to address these issues because of its simple crystal structure and unique coexistence of superconductivity and nematicity. However, the orbital nature of the low-energy electronic excitations and its relation to the superconducting gap remain controversial. Here, we report direct observation of the highly anisotropic Fermi surface and extremely anisotropic superconducting gap in the nematic state of the FeSe superconductor by high-resolution laser-based angle-resolved photoemission measurements. We find that the low-energy excitations of the entire hole pocket at the Brillouin zone center are dominated by the singledxzorbital. The superconducting gap exhibits an anticorrelation relation with thedxzspectral weight near the Fermi level; i.e., the gap size minimum (maximum) corresponds to the maximum (minimum) of thedxzspectral weight along the Fermi surface. These observations provide new insights in understanding the orbital origin of the extremely anisotropic superconducting gap in the FeSe superconductor and the relation between nematicity and superconductivity in the iron-based superconductors.

Silicene, analogous to graphene, is a one-atom-thick 2D crystal of silicon, which is expected to share many of the remarkable properties of graphene. The buckled honeycomb structure of silicene, along with enhanced spin-orbit coupling, endows silicene with considerable advantages over graphene in that the spin-split states in silicene are tunable with external fields. Although the low-energy Dirac cone states lie at the heart of all novel quantum phenomena in a pristine sheet of silicene, a hotly debated question is whether these key states can survive when silicene is grown or supported on a substrate. Here we report our direct observation of Dirac cones in monolayer silicene grown on a Ag(111) substrate. By performing angle-resolved photoemission measurements on silicene(3 × 3)/Ag(111), we reveal the presence of six pairs of Dirac cones located on the edges of the first Brillouin zone of Ag(111), which is in sharp contrast to the expected six Dirac cones centered at the K points of the primary silicene(1 × 1) Brillouin zone. Our analysis shows clearly that the unusual Dirac cone structure we have observed is not tied to pristine silicene alone but originates from the combined effects of silicene(3 × 3) and the Ag(111) substrate. Our study thus identifies the case of a unique type of Dirac cone generated through the interaction of two different constituents. The observation of Dirac cones in silicene/Ag(111) opens a unique materials platform for investigating unusual quantum phenomena and for applications based on 2D silicon systems.

Electronic structures are critical characteristics that determine the electrical, magnetic and optical properties of materials. With the capability of directly visualizing band dispersions and Fermi surfaces, angle-resolved photoemission spectroscopy (ARPES) has emerged as a powerful experimental tool to extract the electronic structures of materials and the coupling of these electronic structures to different degrees of freedom in crystal lattices. In the past three decades, advances in instrumentation and light sources have significantly improved the accuracy and efficiency of ARPES experiments. These advances have enabled the application of ARPES in novel material systems to aid our understanding of their physical properties and behaviours. In this Review, we give a brief introduction to the principles of ARPES and outline its applications in different material systems, with a focus on topological quantum materials and transition metal dichalcogenides. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique that can directly visualize electronic structures of materials. In this Review, the basic principles of ARPES are introduced, and its application to quantum materials, with a focus on topological quantum materials and transition metal dichalcogenides, is discussed.

Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we report a new phenomenon of the spin texture locking with the orbital texture in a topological insulator Bi 2 Se 3 . We observe light-polarization-dependent spin texture of both the upper and lower Dirac cones that constitutes strong evidence of the orbital-dependent spin texture in Bi 2 Se 3 . The different spin texture detected in variable polarization geometry is the manifestation of the spin-orbital texture in the initial state combined with the photoemission matrix element effects. Our observations provide a new orbital degree of freedom and a new way of light manipulation in controlling the spin structure of the topological insulators that are important for their future applications in spin-related technologies. Topological insulators like bismuth selenide exhibit Dirac surface states in which the electron spin is locked with the crystal momentum. Using spin- and angle-resolved photoemission spectroscopy, the authors observe a new kind of coupling between the spin and orbital texture of the Dirac cones.

The Dirac materials, such as graphene and three-dimensional topological insulators, have attracted much attention because they exhibit novel quantum phenomena with their low energy electrons governed by the relativistic Dirac equations. One particular interest is to generate Dirac cone anisotropy so that the electrons can propagate differently from one direction to the other, creating an additional tunability for new properties and applications. While various theoretical approaches have been proposed to make the isotropic Dirac cones of graphene into anisotropic ones, it has not yet been met with success. There are also some theoretical predictions and/or experimental indications of anisotropic Dirac cone in novel topological insulators and AMnBi 2 (A = Sr and Ca) but more experimental investigations are needed. Here we report systematic high resolution angle-resolved photoemission measurements that have provided direct evidence on the existence of strongly anisotropic Dirac cones in SrMnBi 2 and CaMnBi 2 . Distinct behaviors of the Dirac cones between SrMnBi 2 and CaMnBi 2 are also observed. These results have provided important information on the strong anisotropy of the Dirac cones in AMnBi 2 system that can be governed by the spin-orbital coupling and the local environment surrounding the Bi square net.

Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving relativistic Dirac fermions which are responsible for exotic quantum phenomena and potential applications in spintronics and quantum computations. It is essential to understand how the Dirac fermions interact with other electrons, phonons and disorders. Here we report super-high resolution angle-resolved photoemission studies on the Dirac fermion dynamics in the prototypical Bi 2 (Te,Se) 3 topological insulators. We have directly revealed signatures of the electron-phonon coupling and found that the electron-disorder interaction dominates the scattering process. The Dirac fermion dynamics in Bi 2 (Te 3− x Se x ) topological insulators can be tuned by varying the composition, x, or by controlling the charge carriers. Our findings provide crucial information in understanding and engineering the electron dynamics of the Dirac fermions for fundamental studies and potential applications.