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On-chip spectrometers have the potential to offer dramatic size, weight, and power advantages over conventional benchtop instruments for many applications such as spectroscopic sensing, optical network performance monitoring, hyperspectral imaging, and radio-frequency spectrum analysis. Existing on-chip spectrometer designs, however, are limited in spectral channel count and signal-to-noise ratio. Here we demonstrate a transformative on-chip digital Fourier transform spectrometer that acquires high-resolution spectra via time-domain modulation of a reconfigurable Mach-Zehnder interferometer. The device, fabricated and packaged using industry-standard silicon photonics technology, claims the multiplex advantage to dramatically boost the signal-to-noise ratio and unprecedented scalability capable of addressing exponentially increasing numbers of spectral channels. We further explore and implement machine learning regularization techniques to spectrum reconstruction. Using an ‘elastic-D 1 ’ regularized regression method that we develop, we achieved significant noise suppression for both broad (>600 GHz) and narrow (<25 GHz) spectral features, as well as spectral resolution enhancement beyond the classical Rayleigh criterion. On-chip spectrometers typically have limited spectral channels and low signal to noise ratios. Here the authors introduce a digital architecture that uses switches to change the interferometer path lengths, enabling exponentially more spectral channels per circuit element and lower noise by leveraging a machine learning reconstruction algorithm.

The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Optical phase change materials (O-PCMs), a unique group of materials featuring exceptional optical property contrast upon a solid-state phase transition, have found widespread adoption in photonic applications such as switches, routers and reconfigurable meta-optics. Current O-PCMs, such as Ge–Sb–Te (GST), exhibit large contrast of both refractive index (Δ n ) and optical loss (Δ k ), simultaneously. The coupling of both optical properties fundamentally limits the performance of many applications. Here we introduce a new class of O-PCMs based on Ge–Sb–Se–Te (GSST) which breaks this traditional coupling. The optimized alloy, Ge 2 Sb 2 Se 4 Te 1 , combines broadband transparency (1–18.5 μm), large optical contrast (Δ n  = 2.0), and significantly improved glass forming ability, enabling an entirely new range of infrared and thermal photonic devices. We further demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio and an electrically-addressed spatial light modulator pixel, thereby validating its promise as a material for scalable nonvolatile photonics. Here, the authors introduce optical phase change materials based on Ge-Sb-Se-Te which breaks the coupling between refractive index and optical loss allowing low-loss performance benefits. They demonstrate low losses in nonvolatile photonic circuits and electrical pixelated switching have been demonstrated.

Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb 2 Se 3 and Ge 2 Sb 2 Se 4 Te 1 , were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach–Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits. The foundry-compatible platform could facilitate integration of phase change materials for reconfigurable photonics and open up the possibility of integrating excellent optoelectronic materials into future silicon photonic process design kits.

The mid-infrared (mid-IR) is a strategically important band for numerous applications ranging from night vision to biochemical sensing. Here we theoretically analyzed and experimentally realized a Huygens metasurface platform capable of fulfilling a diverse cross-section of optical functions in the mid-IR. The meta-optical elements were constructed using high-index chalcogenide films deposited on fluoride substrates: the choices of wide-band transparent materials allow the design to be scaled across a broad infrared spectrum. Capitalizing on a two-component Huygens’ meta-atom design, the meta-optical devices feature an ultra-thin profile ( λ 0 /8 in thickness) and measured optical efficiencies up to 75% in transmissive mode for linearly polarized light, representing major improvements over state-of-the-art. We have also demonstrated mid-IR transmissive meta-lenses with diffraction-limited focusing and imaging performance. The projected size, weight and power advantages, coupled with the manufacturing scalability leveraging standard microfabrication technologies, make the Huygens meta-optical devices promising for next-generation mid-IR system applications. Mid-IR optics can require exotic materials or complicated processing, which can result in high cost and inferior quality. Here the authors report the demonstration of high-efficiency mid-IR transmissive lenses based on dielectric Huygens metasurface, showing diffraction limited focusing and imaging performance.

The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO 2 substrates limit operation to wavelengths λ  ≲ 4 μm. Here we overcome these challenges with a chalcogenide glass-on-CaF 2 PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to λ  = 5.2 μm with a Johnson noise-limited noise-equivalent power of 1.1 nW/Hz 1/2 , no fall-off in photoresponse up to f  = 1 MHz, and a predicted 3-dB bandwidth of f 3dB  > 1 GHz. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications. Mid-infrared photonic integrated circuits (PICs) are important for sensing and optical communications, but their operational wavelengths are usually limited below 4  μ m. Here, the authors report the realization of photothermoelectric graphene photodetectors incorporated in a chalcogenide glass-on-CaF2 PIC operating at 5.2  μ m, showing promising results for gas sensing applications.

Ultra-high extinction ratio (ER) optical modulation is crucial for achieving high-performance fiber-optic distributed acoustic sensing (DAS) for various applications. Bulky acousto-optical modulators (AOM) as one of the key devices in DAS have been used for many years, but their relatively large volume and high power consumption are becoming the bottlenecks to hinder the development of ultra-compact and energy-efficient DAS systems that are highly demanded in practice. Here, an on-chip silicon electro-optical modulator (EOM) based on multiple coupled microrings is demonstrated with ultra-high ER of up to 68 dB while the device size and power consumption are only 260 × 185 μm 2 and 3.6 mW, respectively, which are at least two orders of magnitude lower than those of a typical AOM. Such an on-chip EOM is successfully applied to DAS with an ultra-high sensitivity of −71.2 dB rad 2 /Hz (4 pε/√Hz) and a low spatial crosstalk noise of −68.1 dB rad 2 /Hz, which are very similar to those using an AOM. This work may pave the way for realization of next-generation ultra-compact DAS systems by integration of on-chip opto-electronic devices and modules with the capability of mass-production. On-chip optoelectronic devices are promising to build compact and efficient distributed acoustic sensing (DAS) systems. Here, the authors demonstrate an ultra-high extinction ratio electro-optical modulator on silicon and its application for DAS.

With the development of novel optoelectronic materials and nanofabrication technologies, integrated photonics is a rapidly developing field that will promote the development and application of next‐generation photonic devices. In recent years, emerging two‐dimensional materials (2DMs) including graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and ternary compounds show many complementarities and unique characteristics over those of traditional optoelectronic materials including broadband absorption, ultrafast carrier mobility, strong nonlinear effects, and compatibility for monolithic integration. Herein, the recent progress on waveguide‐integrated active devices for a full photonic circuit based on 2DMs is reviewed. Both the development of nanofabrication techniques and the working mechanism of active photonic components based on 2DMs containing integrated light sources, waveguide‐integrated modulators, photodetectors, as well as some advanced 2DMs‐based optoelectronic devices are illustrated in detail. In the end, the existing challenges and perspectives on novel 2DMs‐integrated photonics are summarized and discussed. Two‐dimensional materials (2DMs) have recently emerged as an important class of photonic materials offering exceptional optical performance, which attracts increasing attention for a wide range of applications in integrated photonics. Herein, active optoelectronic devices based on 2DMs that could be the advanced components for future photonic circuits are reviewed.

Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits. Designing an efficient activation function for optical neural networks remains a challenge. Here, the authors demonstrate a modulator-detector-in-one graphene/silicon heterojunction ring resonators enabling on-chip reconfigurable activation function devices with phase activation capability for optical neural networks.

The solution of matrix eigenvalues has always been a research hotspot in the field of modern numerical analysis, which has important value in practical application of engineering technology and scientific research. Despite the fact that currently existing algorithms for solving the eigenvalues of matrices are well-developed to try to satisfy both in terms of computational accuracy and efficiency, few of them have been able to be realized on photonic platform. The photonic neural network not only has strong judgment in solving inference tasks due to the superior learning ability, but also makes full use of the advantages of photonic computing with ultrahigh speed and ultralow energy consumption. Here, we propose a strategy of an eigenvalue solver for real-value symmetric matrices based on reconfigurable photonic neural networks. The strategy shows the feasibility of solving the eigenvalues of real-value symmetric matrices of  ×  matrices with locally connected networks. Experimentally, we demonstrate the task of solving the eigenvalues of 2 × 2, 3 × 3, and 4 × 4 real-value symmetric matrices based on graphene/Si thermo-optical modulated reconfigurable photonic neural networks with saturated absorption nonlinear activation layer. The theoretically predicted test set accuracy of the 2 × 2 matrices is 93.6% with the measured accuracy of 78.8% in the experiment by the standard defined for simplicity of comparison. This work not only provides a feasible solution for the on-chip integrated photonic realization of eigenvalue solving of real-value symmetric matrices, but also lays the foundation for a new generation of intelligent on-chip integrated all-optical computing.