Explore the vast range of titles available.

As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-path current problem that limits their scalability and read accuracy, a two-terminal selector can be integrated at each cross-point to form the one-selector-one-memristor (1S1R) stack. In this work, we demonstrate a CuAg alloy-based, thermally stable and electroforming-free selector device with tunable threshold voltage and over 7 orders of magnitude ON/OFF ratio. A vertically stacked 64 × 64 1S1R cross-point array is further implemented by integrating the selector with SiO 2 -based memristors. The 1S1R devices exhibit extremely low leakage currents and proper switching characteristics, which are suitable for both storage class memory and synaptic weight storage. Finally, a selector-based leaky integrate-and-fire neuron is designed and experimentally implemented, which expands the application prospect of CuAg alloy selectors from synapses to neurons. Designing efficient selector devices remains a challenge. Here, the authors propose a CuAg alloy-based selector with excellent ON/OFF ratio and thermal stability. It can effectively suppress the sneak-path current in 1S1R arrays, making it suitable for storage class memory and neuromorphic computing applications.

Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

MoO X (X < 3) has shown its promising potential as an efficient hole-selective passivating contact in crystalline Si solar cells. The device performance highly depends on the film properties of MoO X film, which is significantly affected by different synthesis methods. In this work, Si solar cells with c -Si( p )/MoO X rear contacts were demonstrated, where the MoO X films were realized by thermal evaporation (TE), atomic layer deposition (ALD), and UV-assisted ALD (UV-ALD) methods. A pronounced efficiency drop was disclosed with the order of TE, ALD, and UV-ALD MoO X . Subsequently, the contact propertieis, crystallinity, chemical states, roughness, density, and refractive indices of MoO X films were systematically characterized by a series of microscopic and spectroscopic analyses. It is found that the TE film is composed of nanocrystals, while ALD methods yield amorphous feature with a smaller density and refractive indices. A mild UV illumination (3.5 mW/cm 2 ) slightly reduces the film roughness, while a stronger (35 mW/cm 2 ) one increases the film density, roughness, and growth rate significantly.

Flexible electronics are currently one of the most important developing trends, which is normally fabricated and supported on external flexible substrates. In this work, we experimentally realized a facile graphene-mediated peel-off technology for the substrate-free flexible hydrogenated amorphous silicon ( a -Si:H) thin film solar cell. The a -Si:H solar cells were firstly grown on high thermal tolerance rigid SiO 2 /Si substrates with graphene interlayers and then were facilely peeled off from the graphene/SiO 2 /Si substrate with high fidelity. The density functional theory calculations verify the fact that sandwiching the graphene sheet weakens the interaction between the solar device and SiO 2 /Si substrate with a 61% exfoliation energy drop. Subsequently, a microstructured polyethylene terephthalate film was designed as the window layer of the substrate-free a -Si:H device to promote the broadband and omnidirectional enhanced performance of the flexible device, as well as the mechanical strength. Our proposed graphene-mediated peel-off process can be extended to fabricate other light weight electronics and optoelectronic devices (especially for devices needed to be obtained under high temperature) and can potentially be developed into large-scale manufacturing in the future as well.

Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll‐to‐roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si‐based triple‐junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance.

The trapped rainbow effect has been mostly found on tapered anisotropic metamaterials (MMs) made of low loss noble metals, such as gold, silver, etc. In this work, we demonstrate that an anisotropic MM waveguide made of high loss metal tungsten can also support the trapped rainbow effect similar to the noble metal based structure. We show theoretically that an array of tungsten/germanium anisotropic nano-cones placed on top of a reflective substrate can absorb light at the wavelength range from 0.3 micrometer to 9 micrometer with an average absorption efficiency approaching 98%. It is found that the excitation of multiple orders of slow-light resonant modes is responsible for the efficient absorption at wavelengths longer than 2 micrometer, and the anti-reflection effect of tapered lossy material gives rise to the near perfect absorption at shorter wavelengths. The absorption spectrum suffers a small dip at around 4.2 micrometer where the first order and second order slow-light modes get overlapped, but we can get rid of this dip if the absorption band edge at long wavelength range is reduced down to 5 micrometer. The parametrical study reflects that the absorption bandwidth is mainly determined by the filling ratio of tungsten as well as the bottom diameter of the nano-cones and the interaction between neighboring nano-cones is quite weak. Our proposal has some potential applications in the areas of solar energy harvesting and thermal emitters.

Electromagnetic absorbers have drawn increasing attention in many areas. A series of plasmonic and metamaterial structures can work as efficient narrow band absorbers due to the excitation of plasmonic or photonic resonances, providing a great potential for applications in designing selective thermal emitters, bio-sensing, etc. In other applications such as solar energy harvesting and photonic detection, the bandwidth of light absorbers is required to be quite broad. Under such a background, a variety of mechanisms of broadband/multiband absorption have been proposed, such as mixing multiple resonances together, exciting phase resonances, slowing down light by anisotropic metamaterials, employing high loss materials and so on.

In this paper, we employ an antireflective coating which comprises of inverted pi shaped metallic grooves to manipulate the behaviour of a TM-polarized plane wave transmitted through a periodic nanoslit array. At normal incidence, such scheme can not only retain the optical curtain effect in the output region, but also generate the extraordinary transmission of light through the nanoslits with the total transmission efficiency as high as 90%. Besides, we show that the spatially invariant field distribution in the output region as well as the field distribution of resonant modes around the inverted pi shaped grooves can be reproduced immaculately when the system is excited by an array of point sources beneath the inverted pi shaped grooves. In further, we investigate the influence of center-groove and side-corners of the inverted pi shaped grooves on suppressing the reflection of light, respectively. Based on our work, it shows promising potential in applications of enhancing the extraction efficiency as well as controlling the beaming pattern of light emitting diodes.

We propose an efficient multiband absorber comprising a truncated one-dimensional periodic metal-dielectric photonic crystal and a reflective substrate. The reflective substrate is actually an optically thick metallic film. Such a planar device is easier to fabricate compared with the absorbers with complicated shapes. For a 4-unit cell device, all of the four absorption peaks can be optimized with efficiencies higher than 95%. Moreover, those absorption peaks are insensitive to both polarization and incident angle. The influences of the geometrical parameters along with the refractive index of the dielectric on the device performance are discussed as well. Furthermore, it is found that the number of absorption peaks within each photonic band exactly corresponds to the number of the unit cells because the truncated photonic crystal lattices have the function of selecting resonant modes. It is also displayed that the total absorption efficiency gradually increases when there are more metal-dielectric unit cells placing on top of the metallic substrate. Our work is expected to have some potential applications in the areas of solar energy harvesting and thermal emission tailoring.

Due to the remarkable anti-tumor activities of oridonin (Ori), research on Rabdosia rubescens has attracted more and more attention in the pharmaceutical field. The purpose of this study was to extract Ori from R. rubescens by ultrasound-assisted extraction (UAE) and prepare Ori liposomes as a novel delivery system to improve the bioavailability and biocompatibility. Response surface methodology (RSM), namely Box-Behnken design (BBD), was applied to optimize extraction conditions, formulation, and preparation process. The results demonstrated that the optimal extraction conditions were an ethanol concentration of 75.9%, an extraction time of 35.7 min, and a solid/liquid ratio of 1:32.6. Under these optimal conditions, the extraction yield of Ori was 4.23 mg/g, which was well matched with the predicted value (4.28 mg/g). The optimal preparation conditions of Ori liposomes by RSM, with an ultrasonic time of 41.1 min, a soybean phospholipids/drug ratio of 9.6 g/g, and a water bath temperature of 53.4 °C, had higher encapsulation efficiency (84.1%). The characterization studies indicated that Ori liposomes had well-dispersible spherical shapes and uniform sizes with a particle size of 137.7 nm, a polydispersity index (PDI) of 0.216, and zeta potential of −24.0 mV. In addition, Ori liposomes presented better activity than free Ori. Therefore, the results indicated that Ori liposomes could enhance the bioactivity of Ori, being proposed as a promising vehicle for drug delivery.