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Defect centres in crystals like diamond or silicon find a wide application in quantum technology, where the detection and control of their quantum states is crucial for their implementation as quantum sensors and qubits. The quantum information is usually encoded in the spin state of these defect centres, but they also often possess a charge which is typically not utilized. We report here the detection of elementary charges bound to single nitrogen-vacancy (NV) centres several nanometres below the diamond surface using Kelvin Probe Force Microscopy (KPFM) under laser illumination. Moreover, the measured signal depends on the NV’s electron spin state, thus allowing to perform a non-optical single spin readout, a technique we refer to as “Surface Voltage Detected Magnetic Resonance” (SVDMR). Our method opens a way of coherent spin dynamics detection for quantum sensing applications and could be potentially applied to other solid state systems. We believe that this voltage-based readout would help to simplify the design of devices for quantum technology. The spin state of color centers in semiconductors can be read out by optical means, but electrical readout is desirable for device applications. Here the authors develop a method for electrical readout of single spins based on the detection of surface photo-voltage and demonstrate it for NV centers in diamond.

We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity ( v I ) at the PEDOT:PSS/c-Si interface. An estimated v I of ~400 cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.

We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.

Water under 2D confinement exhibits unique structural and dynamic behaviors distinct from bulk water, including phase transitions and altered hydrogen-bonding networks, making it of great scientific interest. While confinement in 2D materials like graphene, mica, or hexagonal boron nitride has been reported, their lack of intrinsic hydrophilicity or metallic conductivity limits their suitability for probing the interplay between confined water and electronic transport. MXenes, a family of 2D transition metal carbides and nitrides, overcome these limitations by combining high metallic conductivity (~10 4  S cm −1 ) with hydrophilicity, offering a unique platform to investigate confined water dynamics and their influence on electronic properties. Here, we show that temperature and confinement drive structural transitions of water within MXene interlayers, including the formation of localized ice clusters, amorphous ice, and dynamic hydrogen-bonded networks. These transformations disrupt stacking order, inducing a reversible metal-to-semiconductor transition and conductivity hysteresis in MXene films. Upon heating to 340 K, the dissociation of ice clusters restores interlayer spacing and metallic behavior. Our findings experimentally establish MXenes as an exceptional platform for studying the phase change of confined water, offering new insights into how nanoscale water dynamics modulate electronic properties and enabling the design of advanced devices with tunable interlayer interactions. Authors show that water trapped between 2D MXene sheets forms amorphous ice clusters at low temperatures, which cause a hysteresis of electrical conductivity. This structural rearrangement of water is affected by the presence of solvated cations, allowing reversible switching of the electronic properties of MXene films.

We have employed state-of-the-art cross-correlation noise spectroscopy (CCNS) to study carrier dynamics in silicon heterojunction solar cells (SHJ SCs). These cells were composed of a light absorbing n -doped monocrystalline silicon wafer contacted by passivating layers of i - a -Si:H and doped a -Si:H selective contact layers. Using CCNS, we are able to resolve and characterize four separate noise contributions: (1) shot noise with Fano factor close to unity due to holes tunneling through the np-junction, (2) a 1/ f term connected to local potential fluctuations of charges trapped in a-Si:H defects, (3) generation-recombination noise with a time constant between 30 and 50 μs and attributed to recombination of holes at the interface between the ITO and n-a -Si:H window layer, and (4) a low-frequency generation-recombination term observed below 100 K which we assign to thermal emission over the ITO/ ni - a -Si:H interface barrier. These results not only indicate that CCNS is capable of reveling otherwise undetectable relaxation process in SHJ SCs and other multi-layer devices, but also that the technique has a spatial selectivity allowing for the identification of the layer or interface where these processes are taking place.

Electron paramagnetic resonance (EPR) is an accurate and efficient technique to probe unpaired electrons in many applications across materials science, chemistry, and biology. Dynamic processes are investigated using EPR; however, these applications are limited by the use of resonator-based spectrometers such that the entire process must be confined to the resonator. The EPR-on-a-chip (EPRoC) device circumvents this limitation by integrating the entire EPR spectrometer into a single microchip. In this approach, the coil of a voltage-controlled oscillator (VCO) is used as the microwave source and detector simultaneously, operating under a protective coating such that the device may be placed in the sample solution directly. Additionally, improvements in sensitivity via rapid scan EPR (RS-EPR/RS-EPRoC) increase the accessible applications where SNR per measurement time is the fundamental limit. The herein reported device combines a dipstick EPRoC sensor with the enhanced sensitivity of frequency-swept frequency modulated rapid scan to measure triarylmethyl (trityl, Ox071) oxygen-sensitive probes dissolved in aqueous solutions. EPR spectra of Ox071 solutions were recorded using the RS-EPRoC sensor while varying the oxygen concentration of the solution between normal atmosphere and after purging the solution with nitrogen gas. We demonstrate that EPRoC may be employed to monitor dissolved oxygen in fluid solution in an online fashion.

Graphitic carbon nitride (gCN) materials have been shown to efficiently perform light-induced water splitting, carbon dioxide reduction, and environmental remediation in a cost-effective way. However, gCN suffers from rapid charge-carrier recombination, inefficient light absorption, and poor long-term stability which greatly hinders photocatalytic performance. To determine the underlying catalytic mechanisms and overall contributions that will improve performance, the electronic structure of gCN materials has been investigated using electron paramagnetic resonance (EPR) spectroscopy. Through lineshape analysis and relaxation behavior, evidence of two independent spin species were determined to be present in catalytically active gCN materials. These two contributions to the total lineshape respond independently to light exposure such that the previously established catalytically active spin system remains responsive while the newly observed, superimposed EPR signal is not increased during exposure to light. The time dependence of these two peaks present in gCN EPR spectra recorded sequentially in air over several months demonstrates a steady change in the electronic structure of the gCN framework over time. This light-independent, slowly evolving additional spin center is demonstrated to be the result of oxidative processes occurring as a result of exposure to the environment and is confirmed by forced oxidation experiments. This oxidized gCN exhibits lower H2 production rates and indicates quenching of the overall gCN catalytic activity over longer reaction times. A general model for the newly generated spin centers is given and strategies for the alleviation of oxidative products within the gCN framework are discussed in the context of improving photocatalytic activity over extended durations as required for future functional photocatalytic device development.

Electrically detected magnetic resonance (EDMR) is a spectroscopic technique that provides information about the physical properties of materials through the detection of variations in conductivity induced by spin-dependent processes. EDMR has been widely applied to investigate thin-film semiconductor materials in which the presence of defects can induce the current limiting processes. Conventional EDMR measurements are performed on samples with a special geometry that allows the use of a typical electron paramagnetic resonance (EPR) resonator. For such measurements, it is of utmost importance that the geometry of the sample under assessment does not influence the results of the experiment. Here, we present a single-board EPR spectrometer using a chip-integrated, voltage-controlled oscillator (VCO) array as a planar microwave source, whose geometry optimally matches that of a standard EDMR sample, and which greatly facilitates electrical interfacing to the device under assessment. The probehead combined an ultrasensitive transimpedance amplifier (TIA) with a twelve-coil array, VCO-based, single-board EPR spectrometer to permit EDMR-on-a-Chip (EDMRoC) investigations. EDMRoC measurements were performed at room temperature on a thin-film hydrogenated amorphous silicon (a-Si:H) pin solar cell under dark and forward bias conditions, and the recombination current driven by the a-Si:H dangling bonds (db) was detected. These experiments serve as a proof of concept for a new generation of small and versatile spectrometers that allow in situ and operando EDMR experiments.

Electron paramagnetic resonance (EPR) spectroscopy is an essential tool to investigate the effects of ionizing radiation, which is routinely administered for reducing contaminations and waste in food products and cosmetics as well as for sterilization in industry and medicine. In materials research, EPR methods are not only employed as a spectroscopic method of structural investigations, but also have been employed for detection of changes in electronic structure due to radiation damage from high energy X-rays, for example, to monitor radical formation inside biomolecules caused by X-ray irradiation at carbon, nitrogen, and oxygen K-edges at synchrotron facilities. Here a compact EPR spectrometer, based on EPR-on-a-chip (EPRoC) sensor and a portable electromagnet, has been developed as a solution for monitoring radiation damage of samples during their investigation by X-ray absorption spectroscopy (XAS) at synchrotron facilities. A portable electromagnet with a soft iron core and forced air temperature stabilization was constructed as the source of the external magnetic field. The sweep range of magnetic field inside the most homogeneous region of the portable electromagnet is 12–290 mT. The compact spectrometer performance was evaluated by placing the EPRoC sensor inside either a commercial electromagnet or the portable electromagnet to record the EPR spectrum of tempol, irradiated alanine, and dilithium phthalocyanine (Li 2 Pc). The potential performance of the portable spectrometer for the detection of radiation damage in organic compounds and transition metal-containing catalysts during XAS measurements in both fluorescence and transmission modes was calculated with promising implications for measurements after implementation in a synchrotron-based XAS spectrometer.

In recent years, a variety of solid-state qubits has been realized, including quantum dots 1 , 2 , superconducting tunnel junctions 3 , 4 and point defects 5 , 6 . Owing to its potential compatibility with existing microelectronics, the proposal by Kane 7 , 8 —on the basis of phosphorus donors in silicon—has been pursued intensively 9 , 10 , 11 . A key issue of this concept is the readout of the 31 P quantum state. Electrical measurements of magnetic resonance have been carried out on single spins 12 , 13 , but the statistical nature of these experiments based on random-telegraph-noise measurements has impeded the readout of single spin states. Here, we demonstrate the measurement of the spin state of 31 P donor electrons in silicon and the observation of Rabi flops by purely electric means, that is by coherent manipulation of spin-dependent charge-carrier recombination between the 31 P donor and paramagnetic localized states at the Si/SiO 2 interface. The electron spin information is shown to be coupled through the hyperfine interaction to the 31 P nucleus, suggesting that recombination-based readout of nuclear spins is feasible.