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High quality-factor (Q) optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration in a photonic waveguide platform is key to reducing cost, size, power and sensitivity to environmental disturbances. However, to date, the Q of all-waveguide resonators has been relegated to below 260 Million. Here, we report a Si 3 N 4 resonator with 422 Million intrinsic and 3.4 Billion absorption-limited Qs. The resonator has 453 kHz intrinsic, 906 kHz loaded, and 57 kHz absorption-limited linewidths and the corresponding 0.060 dB m −1 loss is the lowest reported to date for waveguides with deposited oxide upper cladding. These results are achieved through a careful reduction of scattering and absorption losses that we simulate, quantify and correlate to measurements. This advancement in waveguide resonator technology paves the way to all-waveguide Billion Q cavities for applications including nonlinear optics, atomic clocks, quantum photonics and high-capacity fiber communications. Integrated photonic all-waveguide resonators are a critical component in many future applications. Here the authors develop an optimized photonic all-waveguide resonator with an ultra-high quality factor, Q, of almost half a billion, and a narrow sub-MHz linewidth.

Device performance and in particular device stability for blue perovskite light-emitting diodes (PeLEDs) remain considerable challenges for the whole community. In this manuscript, we conceive an approach by tuning the ‘A-site’ cation composition of perovskites to develop blue-emitters. We herein report a Rubidium-Cesium alloyed, quasi-two-dimensional perovskite and demonstrate its great potential for pure-blue PeLED applications. Composition engineering and in-situ passivation are conducted to further improve the material’s emission property and stabilities. Consequently, we get a prominent film photoluminescence quantum yield of around 82% under low excitation density. Encouraged by these findings, we finally achieve a spectra-stable blue PeLED with the peak external quantum efficiency of 1.35% and a half-lifetime of 14.5 min, representing the most efficient and stable pure-blue PeLEDs reported so far. The strategy is also demonstrated to be able to generate efficient perovskite blue emitters and PeLEDs in the whole blue spectral region (from 454 to 492 nm). Besides device operational stability, the color stability is also an important challenge for the perovskite light-emitting diodes, especially the blue ones. Here Jiang et al. report the most efficient and color stable pure-blue perovskite LEDs so far, with a half-lifetime of 14.5 minutes.

Narrow linewidth visible light lasers are critical for atomic, molecular and optical (AMO) physics including atomic clocks, quantum computing, atomic and molecular spectroscopy, and sensing. Stimulated Brillouin scattering (SBS) is a promising approach to realize highly coherent on-chip visible light laser emission. Here we report demonstration of a visible light photonic integrated Brillouin laser, with emission at 674 nm, a 14.7 mW optical threshold, corresponding to a threshold density of 4.92 mW μm −2 , and a 269 Hz linewidth. Significant advances in visible light silicon nitride/silica all-waveguide resonators are achieved to overcome barriers to SBS in the visible, including 1 dB/meter waveguide losses, 55.4 million quality factor (Q), and measurement of the 25.110 GHz Stokes frequency shift and 290 MHz gain bandwidth. This advancement in integrated ultra-narrow linewidth visible wavelength SBS lasers opens the door to compact quantum and atomic systems and implementation of increasingly complex AMO based physics and experiments. In this work the authors demonstrate on-chip integration of Brillouin lasing operating at visible wavelengths, with engineered design for stable output. This technical and scientific advance will help develop integrated light sources for quantum computing or atomic and molecular spectroscopy.

Understanding the function of moisture on perovskite is challenging since the random environmental moisture strongly disturbs the perovskite structure. Here, we develop various N 2 -protected characterization techniques to comprehensively study the effect of moisture on the efficient cesium, methylammonium, and formamidinium triple-cation perovskite (Cs 0.05 FA 0.75 MA 0.20 )Pb(I 0.96 Br 0.04 ) 3 . In contrast to the secondary measurements, the established air-exposure-free techniques allow us directly monitor the influence of moisture during perovskite crystallization. We find a controllable moisture treatment for the intermediate perovskite can promote the mass transportation of organic salts, and help them enter the buried bottom of the films. This process accelerates the quasi-solid-solid reaction between organic salts and PbI 2 , enables a spatially homogeneous intermediate phase, and translates to high-quality perovskites with much-suppressed defects. Consequently, we obtain a champion device efficiency of approaching 24% with negligible hysteresis. The devices exhibit an average T 80 -lifetime of 852 h (maximum 1210 h) working at the maximum power point. Perovskite structure is disturbed by environmental moisture, limiting the device performance. Here, Wei et al. monitor the effect of moisture during the growth by N 2 -protected characterization techniques, and obtain an operationally stable perovskite solar cell with efficiency approaching 24%.

The performance of solar cells based on molecular electronic materials is limited by relatively high nonradiative voltage losses. The primary pathway for nonradiative recombination in organic donor-acceptor heterojunction devices is believed to be the decay of a charge-transfer (CT) excited state to the ground state via energy transfer to vibrational modes. Recently, nonradiative voltage losses have been related to properties of the charge-transfer state such as the Franck-Condon factor describing the overlap of the CT and ground-state vibrational states and, therefore, to the energy of the CT state. However, experimental data do not always follow the trends suggested by the simple model. Here, we extend this recombination model to include other factors that influence the nonradiative decay-rate constant, and therefore the open-circuit voltage, but have not yet been explored in detail. We use the extended model to understand the observed behavior of series of small molecules:fullerene blend devices, where open-circuit voltage appears insensitive to nonradiative loss. The trend could be explained only in terms of a microstructure-dependent CT-state oscillator strength, showing that parameters other than CT-state energy can control nonradiative recombination. We present design rules for improving open-circuit voltage via the control of material parameters and propose a realistic limit to the power-conversion efficiency of organic solar cells.

The generation of ultra-low-noise microwave and mmWave in miniaturized, chip-based platforms can transform communication, radar and sensing systems 1 – 3 . Optical frequency division that leverages optical references and optical frequency combs has emerged as a powerful technique to generate microwaves with superior spectral purity than any other approaches 4 – 7 . Here we demonstrate a miniaturized optical frequency division system that can potentially transfer the approach to a complementary metal-oxide-semiconductor-compatible integrated photonic platform. Phase stability is provided by a large mode volume, planar-waveguide-based optical reference coil cavity 8 , 9 and is divided down from optical to mmWave frequency by using soliton microcombs generated in a waveguide-coupled microresonator 10 – 12 . Besides achieving record-low phase noise for integrated photonic mmWave oscillators, these devices can be heterogeneously integrated with semiconductor lasers, amplifiers and photodiodes, holding the potential of large-volume, low-cost manufacturing for fundamental and mass-market applications 13 . A miniaturized optical frequency division system that could transfer the generation of microwaves, with superior spectral purity, to a complementary metal-oxide-semiconductor-compatible integrated photonic platform is demonstrated showing potential for large-volume, low-cost manufacturing for many applications.

Wide-bandgap perovskite solar cells (WBG-PSCs) are critical for developing perovskite/silicon tandem solar cells. The defect-rich surface of WBG-PSCs will lead to severe interfacial carrier loss and phase segregation, deteriorating the device’s performance. Herein, we develop a surface reconstruction method by removing the defect-rich crystal surface by nano-polishing and then passivating the newly exposed high-crystallinity surface. This method can refresh the perovskite/electron-transporter interface and release the residual lattice strain, improving the charge collection and inhibiting the ion migration of WBG perovskites. As a result, we can achieve certified efficiencies of 23.67% and 21.70% for opaque and semi-transparent PSCs via a 1.67-eV perovskite absorber. Moreover, we achieve four-terminal perovskite/silicon tandem solar cells with a certified efficiency of 33.10% on an aperture area of one square centimeter. The defect-rich surface of wide-bandgap perovskite solar cells leads to severe interfacial carrier loss and phase segregation. Here, the authors reconstruct the surface through nano-polishing followed by passivation, achieving certified efficiency of 33.1% for perovskite/silicon tandem solar cells.

Constructing 2D/3D perovskite heterojunctions is effective for the surface passivation of perovskite solar cells (PSCs). However, previous reports that studying perovskite post-treatment only physically deposits 2D perovskite on the 3D perovskite, and the bulk 3D perovskite remains defective. Herein, we propose Cl 2 -dissolved chloroform as a multifunctional solvent for concurrently constructing 2D/3D perovskite heterojunction and inducing the secondary growth of the bulk grains. The mechanism of how Cl 2 affects the performance of PSCs is clarified. Specifically, the dissolved Cl 2 reacts with the 3D perovskite, leading to Cl/I ionic exchange and Ostwald ripening of the bulk grains. The generated Cl − further diffuses to passivate the bulk crystal and buried interface of PSCs. Hexylammonium bromide dissolved in the solvent reacts with the residual PbI 2 to form 2D/3D heterojunctions on the surface. As a result, we achieved high-performance PSCs with a champion efficiency of 24.21% and substantially improved thermal, ambient, and operational stability. Constructing 2D/3D perovskite heterojunctions is effective for the surface passivation of perovskite solar cells. Here, the authors apply Cl 2 -dissolved chloroform as a multifunctional solvent and achieve a champion device efficiency of 24.21% with improved thermal, ambient and operational stability.

Multiphoton excited luminescence is of paramount importance in the field of optical detection and biological photonics. Self-trapped exciton (STE) emission with self-absorption-free advantages provide a choice for multiphoton excited luminescence. Herein, multiphoton excited singlet/triplet mixed STE emission with a large full width at half-maximum (617 meV) and Stokes shift (1.29 eV) has been demonstrated in single-crystalline ZnO nanocrystals. Temperature dependent steady state, transient state and time-resolved electron spin resonance spectra demonstrate a mixture of singlet (63%) and triplet (37%) mixed STE emission, which contributes to a high photoluminescence quantum yield (60.5%). First-principles calculations suggest 48.34 meV energy per exciton stored by phonons in the distorted lattice of excited states, and 58 meV singlet-triplet splitting energy for the nanocrystals being consistent with the experimental measurements. The model clarifies long and controversial debates on ZnO emission in visible region, and the multiphoton excited singlet/triplet mixed STE emission is also observed. Here the author study Self-trapped exciton emission for multiphoton excited luminescence in ZnO nanoparticle which until now have not been explored. They provide a reason for the emission enhancement and apply these materials in optical imaging for a proof of concept.

Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III–V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m−1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m−1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.We demonstrate for the first time, a uniform low temperature (<250 °C) process for fabricating both high-confinement thick and low-confinement thin ultra-low loss Silicon nitride waveguides.