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Natural biopolymers feature natural abundance, diverse chemical compositions, tunable properties, easy processability, excellent biocompatibility and biodegradability, as well as nontoxicity, providing new opportunities for the development of flexible sensing and energy devices. Generally, biopolymers are utilized as the passive and active building blocks to endow the flexible devices with mechanical robustness and good biocompatibility. This review aims to provide a comprehensive review on natural biopolymer-based sensing and energy devices. The diverse structures and fabrication processes of three typical biopolymers, including silk, cellulose, and chitin/chitosan, are presented. We review their utilities as the supporting substrates/matrix, active middle layers, separators, electrolytes, and active components of flexible sensing devices (sensors, actuators, transistors) and energy devices (batteries, supercapacitors, triboelectric nanogenerators). Finally, the remaining challenges and future research opportunities are discussed.

Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm 2  V −1  s −1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications. The synthesis of twisted bilayer graphene with controllable angles is challenging. Here, the authors devise a chemical vapor deposition approach using a hetero-site nucleation strategy that affords twist angles ranging from 0° to 30°.

Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene’s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications. The intrinsic properties of graphene and the resulting device performance are hindered by the impurities produced during the synthesis process. Here, the authors elucidate the origin of contaminations in CVD-grown graphene and devise a strategy towards the scalable production of ultra-clean graphene with >99% clean regions and low contact resistance.

The past few years have witnessed significant development in graphene research, yet a number of challenges remain for its commercialization and industrialization. This Comment discusses relevant issues for industrial-scale graphene synthesis, one of the critical aspects for the future graphene industry.

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy. In this work, we have prepared the strain-free AlN film with low dislocation density (DD) by graphene (Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals (QvdW) epitaxy is presented. The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process. Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode. Remarkably, it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch. Therefore, the low-strain state of the DUV light-emitting diode (DUV-LED) epitaxial structure is realized on the strain-free AlN template with Gr. Furthermore, the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire. An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.

When two-dimensional graphene is exfoliated from three-dimensional highly oriented pyrolytic graphite （HOPG）, ripples or corrugations always exist due to the intrinsic thermal fluctuations. Surface-grown graphenes also exhibit wrinkles, which are larger in dimension and are thought to be caused by the difference in thermal expansion coefficients between graphene and the underlying substrate in the cooling process after high temperature growth. For further characterization and applications, it is necessary to transfer the surface-grown graphenes onto dielectric substrates, and other wrinkles are generated during this process. Here, we focus on the wrinkles of transferred graphene and demonstrate that the surface morphology of the growth substrate is the origin of the new wrinkles which arise in the surface-to-surface transfer process; we call these morphology- induced wrinkles. Based on a careful statistical analysis of thousands of atomic force microscopy （AFM） topographic data, we have concluded that these wrinkles on transferred few-layer graphene （typically 1-3 layers） are determined by both the growth substrate morphology and the transfer process. Depending on the transfer medium and conditions, most of the wrinkles can be either released or preserved. Our work suggests a new route for graphene engineering involving structuring the growth substrate and tailoring the transfer process.

Transferring MoS2 films from growth substrates onto target substrates is a critical issue for their practical applications. Moreover, it remains a great challenge to avoid sample degradation and substrate destruction, because the current transfer method inevitably employs a wet chemical etching process. We developed an etching-free transfer method for transferring MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method, the MoS2 films can be transferred from all substrates （silica, mica, strontium titanate, and sapphire） and retains the original sample morphology and quality. This method guarantees a simple transfer process and allows the reuse of growth substrates, without involving any hazardous etchants. The etching-free transfer method is likely to promote broad applications of MoS2 in photodetectors.

Catalyst-free and scalable synthesis of graphene on various glass substrates at low temperatures is of paramount significance to numerous applications such as low-cost transparent electronics and state-of-the-art displays. However, systematic study within this promising research field has remained scarce thus far. Herein, we report the direct growth of graphene on various glasses using a low-temperature plasma-enhanced chemical vapor deposition method. Such a facile and scalable approach guarantees the growth of uniform, transfer-free graphene films on various glass substrates at a growth temperature range of 400-600 ℃. The morphological, surface wetting, optical, and electrical properties of the obtained graphene can be tailored by controlling the growth parameters. Our uniform and high-quality graphene films directly integrated with low-cost, commonly used glasses show great potential in the fabrication of multi-functional electrodes for versatile applications in solar cells, transparent electronics, and smart windows.

The fast growth of large single-crystalline graphene by chemical vapor deposition on Cu foil remains a challenge for industrial-scale applications. To achieve the fast growth of large single-crystalline graphene, understanding the detailed dynamics governing the entire growth process--including nucleation, growth, and coalescence is important; however, these remain unexplored. In this study, by using a pulsed carbon isotope labeling technique in conjunction with micro-Raman spectroscopy identification, we visualized the growth dynamics, such as nucleation, growth, and coalescence, during the fast growth of large single- crystalline graphene domains. By tuning the supply of the carbon source, a growth rate of 320 μm/min and the growth of centimeter-sized graphene single crystals were achieved on Cu foil.

Infrared light detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of various photoelectric materials. The rise of two-dimensional materials, thanks to their distinct electronic structures, extreme dimensional confinement and strong light–matter interactions, provides a material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which are rare to meet at the same time in one two-dimensional material. Herein we demonstrate an infrared photodetector based on two-dimensional Bi 2 O 2 Se crystal, whose main characteristics are outstanding in the whole two-dimensional family: high sensitivity of 65 AW −1 at 1200 nm and ultrafast photoresponse of ~1 ps at room temperature, implying an intrinsic material-limited bandwidth up to 500 GHz. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of two-dimensional oxyselenide. Two-dimensional (2D) bismuth oxyselenide crystals with suitable electronic band-gap and ultrahigh carrier mobility enable near-infrared photodetection. Here, the authors report an infrared photodetector based on 2D-bismuth oxyselenide with high responsivity, ultrafast photoresponse of ~ 1 ps at room temperature and a detectable frequency limit of up to 500 GHz.