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72 result(s) for "Liyan Shang"
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Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave
Ultrabroadband photodetection is of great significance in numerous cutting‐edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal–Te–metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron–hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W−1 at 635 nm, 9.38 A W−1 at 1550 nm, 9.83 A W−1 at 0.305 THz, 24.8 A W−1 at 0.250 THz, 87.8 A W−1 at 0.172 THz, and 986 A W−1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high‐resolution imaging experiments. Finally, the high stability of the detector is tested by long‐term deposition in air and high‐temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect. In this work, ultrabroadband photoelectric detectors covering visible, infrared, terahertz, and millimeter wave simultaneously are demonstrated through two kinds photoelectric effect synergy of photoexcited electron–hole pairs and electromagnetic induced well effect based on metal–Te–metal structure. The strategy of utilizing full photoelectric effect provides an effective route to achieve ultrabroadband photodetection with high sensitivity and fast response.
High Stubble Height Enhances Ratoon Rice Yield by Optimizing Light–Temperature Resource Utilization and Photothermal Quotient
Ratoon rice is a sustainable planting model, and its yield is closely linked to the light and temperature use efficiency. The photothermal quotient (PQ), a key parameter for evaluating the light and temperature use efficiency, significantly influences ratoon rice yield. However, research on how different stubble heights affect PQ and the utilization efficiency of light and temperature resources remains limited. Here, we conducted a two-year field experiment to investigate the radiation use efficiency (RUE), effective accumulated temperature use efficiency (TUE), PQ, interception percentage (IP), intercepted photosynthetically active radiation (IPAR), and total dry weight (TDW) of six ratoon rice varieties under two stubble height treatments (HS: high stubble, LS: low stubble) during the ratoon season. This study aimed to analyze how different stubble heights impact ratoon rice yield by evaluating light and temperature resource utilization efficiency and investigates the relationship between PQ and ratoon rice yield. The results showed that the HS treatment significantly increased ratoon season yield compared to LS treatment, with average yield increases of 21.2% and 28.1% in 2022 and 2023, respectively. This yield enhancement was attributed to improved TDW under HS treatment, driven by increased IP, IPAR, RUE, and TUE. Notably, PQ was significantly lower under HS than under LS treatment. This reduction was primarily attributed to the decreased duration available for light and heat accumulation, consequently lowering PQ. Correlation analysis revealed a significant positive association between main season yield and PQ, while ratoon season yield exhibited a negative correlation with PQ. In conclusion, the HS treatment increased IP and IPAR, enhanced TUE and RUE, and reduced PQ, collectively contributing to higher ratoon season yields. Importantly, our findings indicate that PQ can more effectively predict yield changes in the ratoon season under HS treatment, providing a theoretical basis for optimizing light and temperature resource utilization in ratoon rice.
CT-Integral on Interval-Valued Sugeno Probability Measure and Its Application in Multi-Criteria Decision-Making Problems
It is well known that the complexity of the decision-making environment frequently coexists with the diversity of linguistic information in the decision-making process. In order to solve this kind of uncertain multi-criteria decision-making problem, reasonable measures and integrals should be established. In this paper, the discrete expression of the CT-integral on the interval-valued Sugeno probability measure is proposed. The CT-integral is the Choquet integral when the t-norm is T(x,y)=xy in the CT-integral and is a pre-aggregation function. Then, the CT-integral on interval-valued Sugeno probability measure is applied to solve end-of-life (EOL) strategy in order to determine multi-criteria decision-making problems. Compared with the general Choquet integral, the method proposed in this paper significantly improves the calculation process, that is, the calculation is simpler and the amount of calculation is smaller. A case study was performed in order to validate the effectiveness of this conclusion.
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation
Controlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g., α‐In2Se3). Multiple conductance states are achieved in α‐In2Se3‐based FeSFETs by controlling the ferroelectric polarization. The on/off current ratio (Ion/Ioff) is ≈105 with a dark current of ≈10−11 A by applying a single positive gate voltage pulse. Moreover, the device shows excellent endurance and retention performance. In a further step, the carrier transports and corresponding physics mechanism in various polarization states are studied by using Kelvin probe force microscopy (KPFM) and optoelectronic measurements. Finally, the α‐In2Se3‐based FETs can be trained. It can recognize handwritten digit images from MNIST dataset with a successful recognition accuracy of ≈95.5%. This work provides a new design idea and theoretical support for advanced optoelectronic devices in the field of in‐memory sensing and computing. A α‐In2Se3‐based FeSFET is developed to realize optical storage in various polarization states. The unique ferroelectricity has an excellent electric performance (Ion/Ioff = 105) and device stability. Moreover, the ferroelectric and optoelectronic coupling effects in FeSFETs are clarified to simulate the persistent visual behavior in the nervous system with a high recognition accuracy of ≈95.5%.
Preparation and characterization of narrow bandgap ferroelectric (K,Ba)(Ni,Nb)O3−δ films for mesoporous all-oxide solar cells
Ferroelectric (K,Ba)(Ni,Nb) O 3 − δ films have triggered intense studies for applications in photovoltaic device due to their efficient ferroelectric polarization-driven carrier separation and above-bandgap generated photovoltages. However, they are suffered from a challenge of preparation limiting novel device architectures. Meanwhile, the bandgap for most of ferroelectric materials reported so far is still too large to be considered for desirable spectral absorption. Here, we propose a unique strategy to successfully synthesize the (K,Ba)(Ni,Nb) O 3 − δ films with the lower bandgap of about 1.45 eV. A new cell structure of utilizing (K,Ba)(Ni,Nb) O 3 − δ as a active layer is explored to interface with electron-transporting TiO2. Such mesoporous-ferroelectric combination solar cell is beneficial for facilitating the extraction of photocarriers. Under standard AM 1.5G irradiation, the optimized (K,Ba)(Ni,Nb) O 3 − δ film solar cell exhibits a higher open-circuit voltage of 1.27 V than those of previous reports on ferroelectrics. Furthermore, a fill factor of 64% and a power conversion efficiency of 0.2% are achieved via the polarization switching modulation. The present results provide a novel synthetic approach toward developing high performance solar cells based on lead-free ferroelectric films.
InN superconducting phase transition
InN superconductivity is very special among III–V semiconductors, as other III–V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. Here, we probe the different superconducting phase transitions in InN highlighted by its microstructure. Those chemical-unstable phase-separated inclusions, such as metallic indium or In 2 O 3 , are intentionally removed by HCl acid etching. The quasi-two-dimensional vortex liquid-glass transition is observed in the sample with a large InN grain size. In contrast, the superconducting properties of InN with a small grain size are sensitive to acid etching, showing a transition into a nonzero resistance state when the temperature approaches zero. Since the value of ξ 0 (the zero-temperature-limit superconducting coherence length) is close to the grain size, it is suggested that individual InN grains and intergrain coupling should be responsible for the sample-dependent InN superconducting phase transition. Our work establishes a guideline for engineering superconductivity in III-nitride.
Shading at the Booting Stage Improved the Grain Quality of Hybrid Rice Due to Reduced Spikelet Production
As a growing abiotic stress, light deficient conditions seriously affect the yield and quality of rice. However, few studies focus on the effects of shading on grain quality at the booting stage and the responses of different hybrid rice cultivars to shading. Field experiments involving four representative rice (Oryza sativa L.) cultivars across no shading (CK) and 40% shading at the booting (S) and grain filling stages (SS) were conducted in 2021 and 2022. Compared with CK, S reduced grain yield by 53.0% but increased the head rice rate by 11.4% averaged across varieties and years. The chalkiness degree (CD) and chalky grain percentage (CR) were reduced by 73.0% and 61.6% in S due to its 45.3% lower total spikelets m–2, 44.0% lower grain–leaf ratio and 23.5% lower dry weight spikelet production efficiency, compared with CK. The CD and CR in SS were 49.5% and 41.0% higher and HR was 7.1% lower than that in CK. Shading significantly reduced amylose content, peak viscosity and breakdown value, but increased protein content and setback value, and the effects of SS were greater than S. Y-liangyou900 and Liangyoupeijiu showed better milling quality, while Y-liangyou900 and Chuanyou6203 obtained a better appearance and eating quality than the other varieties under both S and SS. In conclusion, shading at the booting stage significantly improved the milling, appearance and nutritional quality, and did not reduce the cooking and eating quality, but led to a significant decline in the grain yield of hybrid rice. Moreover, Y-liangyou900 exhibited better rice quality but lower yield under shading treatments. Therefore, more attention needs to be focused on screening shade-tolerant varieties using both yield and quality to cope with climate change in the future.
Study on Migration and Transformation of Cd in BHMTPMPA Remediation Soil
Organic phosphonic acid has good chelation ability, easy biodegradation, and belongs to environmental friendly reagent. It can be used as eluent to remediate soil contaminated by heavy metal Cd. This paper studied the migration and transformation process of Cd in organic phosphonic acid BHMTPMPA remediation soil. The results showed that the concentration of exchangeable Cd in 1-7 layer of soil column was significantly higher than that in control, and the concentration of exchangeable Cd in 8-10 layer was not significantly different. The activation effect of BHMTPMPA on Cd in soil column is mainly concentrated in the depth of 0-70 cm soil layer. The exchangeable states in layer 2 Cd the highest concentration, and the exchangeable states in other soil layers Cd no obvious migration occurs, which indicated that the migration mainly occurred in the depth of 0-20 cm soil layer, and the Cd of other forms in the soil column did not occur obvious migration phenomenon.
Dense Planting with Reduced Nitrogen Input Improves Grain Yield, Protein Quality, and Resource use Efficiency in Hybrid Rice
Improving grain yield, resource use efficiency, and grain quality is a major challenge in rice production. The objective of this study was to investigate the comprehensive effects of dense planting with reduced nitrogen application on grain yield, resource use efficiency, and grain protein content in hybrid rice. Field experiment was conducted with indica - japonica hybrid rice Yongyou4949, indica hybrid rice Yangliangyou6, and indica inbred rice Huanghuazhan at two nitrogen levels (90 and 180 kg ha −1 ) and two planting densities (22.2 and 33.3 hills m −2 ) in 2019 and 2020. Reducing nitrogen input significantly improved resource use efficiency, but resulted in lower total dry weight and caused a significant yield loss in rice. Increasing planting density significantly enhanced the total dry weight and partially compensated for yield loss caused by reduced nitrogen input. The compensation effects were higher in hybrid rice Yongyou4949 and Yangliangyou6 than inbred rice Huanghuazhan and were 82.7%, 117.6%, and 43.1%, respectively. Meanwhile, increasing planting density further improved the resource use efficiency under reducing nitrogen input via increasing number of panicles and enlarging sink size. Both reducing nitrogen input and increasing planting density resulted in the decrease in grain protein content and the former had a greater effect than the latter. Furthermore, significantly negative correlation between nitrogen use efficiency for grain production and grain protein content was observed during the study. All these results suggest that dense planting with reduced nitrogen input practices could improve the grain yield and grain quality and enhance the resource use efficiency in hybrid rice.
Exploration on the growth of Bi2O2Se films and nanosheet by an ALD-assisted CVD method
The emerging two-dimensional bismuth selenium oxide (2D Bi 2 O 2 Se) has attracted great attention due to its high mobility and excellent air stability. Bi 2 O 2 Se with different morphologies, including the film and the nanosheet can be obtained by the chemical vapor deposition (CVD) method. However, the growth mode during the synthesis process is still unclear. In this work, we present systematic studies to understand the growth of Bi 2 O 2 Se films and nanosheet. The atomic layer deposition (ALD) method is first used to prepare the bismuth precursor for the CVD growth of Bi 2 O 2 Se. The amount of the precursor can be effectively controlled by the ALD method, and it is helpful to understand the growth of the Bi 2 O 2 Se. It is found that the Bi 2 O 2 Se films can be fabricated at a relatively low temperature. The films on the mica substrates follow the layer-by-layer growth mode and those on silicon substrates exhibit a three-dimensional growth mode. The Bi 2 O 2 Se nanosheets can be obtained at higher temperatures on mica substrate and the topography is affected greatly by the concentration of the precursor. The vapor–solid reaction is considered to play the major role during the growth process with low temperature and the vapor–vapor reaction prevails during the growth at higher temperature. In summary, we have provided a new preparation strategy and investigated the growth process of the emerging 2D Bi 2 O 2 Se. The study about the large-scale films and high-quality nanosheets may open up a new path for the urgent need for the preparation and the device fabrication of Bi 2 O 2 Se.