Explore the vast range of titles available.

Effective control of terahertz radiation requires fast and efficient modulators with a large modulation depth—a challenge that is often tackled by using metamaterials. Metamaterial-based active modulators can be created by placing graphene as a tuneable element shunting regions of high electric field confinement in metamaterials. However, in this common approach, the graphene is used as a variable resistor, and the modulation is achieved by resistive damping of the resonance. In combination with the finite conductivity of graphene due to its gapless nature, achieving 100% modulation depth using this approach remains challenging. Here, we embed nanoscale graphene capacitors within the gaps of the metamaterial resonators, and thus switch from a resistive damping to a capacitive tuning of the resonance. We further expand the optical modulation range by device excitation from its substrate side. As a result, we demonstrate terahertz modulators with over four orders of magnitude modulation depth (45.7 dB at 1.68 THz and 40.1 dB at 2.15 THz), and a reconfiguration speed of 30 MHz. These tuneable capacitance modulators are electrically controlled solid-state devices enabling unity modulation with graphene conductivities below 0.7 mS. The demonstrated approach can be applied to enhance modulation performance of any metamaterial-based modulator with a 2D electron gas. Our results open up new frontiers in the area of terahertz communications, real-time imaging, and wave-optical analogue computing. By switching from a variable resistance to a tunable capacitance modulation principle using nanoscale lateral capacitors and leveraging substrate-side reflection, we achieve 100% amplitude modulation in graphene-based metamaterial terahertz modulators.

Photonic integration is a promising route to miniaturise the hardware of quantum key distribution (QKD), yet the monolithic integration of single photon detectors remains a significant challenge. QKD receiver chips integrating superconducting detectors have been demonstrated, but their requirement for cryogenic cooling restricts their practical applications. High-frequency gated single-photon avalanche diodes (SPADs) provide a mature non-cryogenic alternative and their fabrication into compact arrays would enable scalable hybrid integration. However, this faces several challenges related to efficient GHz array gating, inter-pixel crosstalk, and scalable waveguide coupling, which to date remain unaddressed. Here, we overcome the key challenges and develop GHz-gated InGaAs/InP SPAD arrays with performance viable for QKD and negligible inter-pixel crosstalk. We combine the arrays with low-loss silica waveguide chips to produce compact hybrid QKD receivers and perform BB84 protocol experiments, achieving secure key rates over 2 Mbps at short distances and 15 kbps over 100 km of fibre. Our work provides a method for flexible and scalable integration of waveguide-coupled SPADs for quantum information processing applications.

Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology.