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Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a “channel array” approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4 ) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1 ) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper. Paper is a promising substrate for flexible and environmentally sustainable electronic devices. Here, the authors combine chemical vapor deposition of MoS 2 with inkjet printing of a hexagonal boron nitride (hBN) dielectric and silver electrodes, to fabricate flexible MoS 2 field-effect transistors on paper, and then combine the latter with printed graphene resistors and silver interconnects to create inverters, logic gates and current mirrors.

Exploiting the properties of two-dimensional crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, the available printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive processing. In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of different two-dimensional crystals leading to uncontrolled interfaces and poor device performance. Here, we show a general approach to achieve inkjet-printable, water-based, two-dimensional crystal formulations, which also provide optimal film formation for multi-stack fabrication. We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosensors on plastic and paper and programmable logic memory devices. Finally, in vitro dose-escalation cytotoxicity assays confirm the biocompatibility of the inks, extending their possible use to biomedical applications. Device fabrication can be realized via inkjet printing of water-based 2D crystals.

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov–Bohm interference effects.

Complementary electronics has represented the corner stone of the digital era, and silicon technology has enabled this accomplishment. At the dawn of the flexible and wearable electronics age, the seek for new materials enabling the integration of complementary metal-oxide semiconductor (CMOS) technology on flexible substrates, finds in low-dimensional materials (either 1D or 2D) extraordinary candidates. Here, we show that the main building blocks for digital electronics can be obtained by exploiting 2D materials like molybdenum disulfide, hexagonal boron nitride and 1D materials such as carbon nanotubes through the inkjet-printing technique. In particular, we show that the proposed approach enables the fabrication of logic gates and a basic sequential network on a flexible substrate such as paper, with a performance already comparable with mainstream organic technology.

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

We present an experimental investigation of the effect of ultrasound application to increase the heat-transfer coefficient for natural convection of a dielectric fluid. An experimental analysis is carried out to estimate the increase of the convective heat-transfer coefficient between an electronic board and a refrigerant fluid, the Fluorinert Electronic Fluid FC-72. For this purpose, an experimental apparatus composed of an electronic board, its electronic control circuit, and data acquisition systems have been designed and implemented. The data collected appear to confirm in some situations of practical interest the enhancement effect of the convective heat-transfer coefficient in connection with the use of ultrasound. The most favorable condition was observed with the fluid in quite low subcooled conditions.

Stanene is a single layer of tin atoms which has been discovered as an emerging material for quantum spin Hall related applications. In this paper, we present an accurate tight-binding model for single layer stanene near the Fermi level. We parameterized the onsite and hopping energies for the nearest, second nearest, and third nearest neighbor tight-binding method, both without and with spin orbital coupling. We derived the analytical solution for the Γ → and K → points and numerically investigated the buckling effect on the material electronic properties. In these points of the reciprocal space, we also discuss a corresponding k → ⋅ p → description, obtaining the value of the k → ⋅ p → parameters both analytically from the tight-binding ones, and numerically, fitting the ab-initio dispersion relations. Our models provide a foundation for large scale atomistic device transport calculations.

In this paper, we report the use of a superconducting transmon qubit in a 3D cavity for quantum machine learning and photon counting applications. We first describe the realization and characterization of a transmon qubit coupled to a 3D resonator, providing a detailed description of the simulation framework and of the experimental measurement of important parameters, such as the dispersive shift and the qubit anharmonicity. We then report on a Quantum Machine Learning application implemented on a single-qubit device to fit the u-quark parton distribution function of the proton. In the final section of the manuscript, we present a new microwave photon detection scheme based on two qubits coupled to the same 3D resonator. This could in principle decrease the dark count rate, favoring applications like axion dark matter searches.

Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.

The Quantum Cellular Automaton (QCA) concept represents an attempt to break away from the traditional three-terminal device paradigm that has dominated digital computation. Since its early formulation in 1993 at Notre Dame University, the QCA idea has received significant attention and several physical implementations have been proposed. This book provides a comprehensive discussion of the simulation approaches and the experimental work that have been undertaken on the fabrication of devices capable of demonstrating the fundamentals of QCA action. Complementary views of future perspectives for QCA technology are presented, highlighting a process of realistic simulation and of targeted experiments that can be assumed as a model for the evaluation of future device proposals.